Medienkiller : Kodes eines medialen Mordes

Auf der Flucht wurde im Sommer 2001 das Ehepaar Manuela und Daniel Ruda von der Polizei gestellt. Beide bekannten sich zu dem gemeinschaftlich begangenen Mord an einem Bekannten im westfälischen Witten auf den sie genau 66-mal einstachen und einschlugen. Den Auftrag, so sagten sie übereinstimmend aus, habe ihnen Satan erteilt. Das Opfer sei so ”von seinem unwerten Leben befreit und von seiner Schmach erlöst worden”. Der Ablauf des Mordes, die darauf folgende Flucht und insbesondere auch die Gerichtsauftritte während des Prozesses waren voller Kodierungen, voller Bezüge auf Kult-Filme wie ’Natural Born Killers’ und Ikonen der Gothic-Szene. Eine Hommage an vermeintliche und reale Vorgänger in Zitaten und Symbolen, die weitgehend weder Justiz noch Presse entschlüsseln konnten. Bewusste Inszenenierungen in denen Manuela und Daniel Ruda ihre Rollen nicht nur spielten sondern lebten und dabei doch nur Kopien blieben

Impedanzmessungen in organischen Flüssigkeiten geringer Leitfähigkeit und ihr Einsatz zur Untersuchung von Schmierölen

In der vorliegenden Arbeit wurden Messtechniken zur Charakterisierung organischer Flüssigkeiten geringer Leitfähigkeit mittels Impedanzspektroskopie erprobt. Es wurden verschiedene kapazitive Elektrodenanordnungen mit dem zu untersuchenden Öl als Dielektrikum entwickelt und auf ihre Eignung zur Impedanzmessung an Schmierölen untersucht. Ausgehend von der empirischen Erfahrung, dass die Impedanzwerte in Ölen stark temperaturabhängig sind, wurde in Anlehnung an die Arrheniussche Theorie der chemischen Reaktionskinetik ein Auswerteverfahren für impedanzspektroskopische Messdaten entwickelt und getestet. So wurden die Voraussetzungen dafür geschaffen, dass für einen, in einem bestimmten Frequenzbereich relevanten Leitungsprozess, der zugehörige, auf molekularer Ebene ablaufende Vorgang mit bekannter Aktivierungsenergie angegeben werden kann

A New Built-In Defect-Based Testing Technique to Achieve Zero Defects in the Automotive Environment

Efficient screening procedures for the control of the defectivity are vital to limit early failures especially in critical automotive applications. Traditional strategies based on burn-in and in-line tests are able to provide the required level of reliability but they are expensive and time consuming. This paper presents a novel built-in reliability testing methodology to screen out gate oxide and crystal related defects in Lateral Diffused MOS transistors. The proposed technique is based on an embedded circuitry that includes control logic, high voltage generation, and leakage current monitoring. The concept, advantages and the circuit for the proposed test procedure are described in very detail and illustrated by circuit simulatio

Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

Semiconductor nanowires are possible candidates to replace the metal-oxide-semiconductor field-effect transistors (MOSFET) since they can act both as active devices or as device connectors. In this article, the transmission coefficients of Si and GaAs nanowires with arbitrary transport directions and cross sections are simulated in the nearest-neighbor sp3d5s* semi-empirical tight-binding method. The open boundary conditions (OBC) are calculated with a new scattering boundary method where a normal eigenvalue problem of reduced size is solved. Two different types of contacts are studied. In the ideal case, semi-infinite reservoirs (the source and the drain) that are the prolongation of the device are assumed. In a more realistic configuration, the active nanowire is embedded between two quantum well (QW) reservoirs. The electrical properties of the device are obtained by a non-equilibrium Green's function (NEGF) calculatio

A low-power transmission-gate-based 16-bit multiplier for digital hearing aids

The most widespread 16-bit multiplier architectures are compared in terms of area occupation, dissipated energy, and EDP (Energy-Delay Product) in view of low-power low-voltage signal processing for digital hearing aids and similar applications. Transistor-level simulations including back-annotated wire parasitics confirm that the propagation of glitches along uneven and re-convergent paths results in large unproductive node activity. Because of their shorter full-adder chains, Wallace-tree multipliers indeed dissipate less energy than the carry-save (CSM) and other traditional array multipliers (6.0µW/MHz versus 10.9µW/MHz and more for 0.25µm CMOS technology at 0.75V). By combining the Wallace-tree architecture with transmission gates (TGs), a new approach is proposed to improve the energy efficiency further (3.1µW/MHz), beyond recently published low-power architectures. Besides the reduction of the overall capacitance, minimum-sized transmission gate full-adders act as RC-low-pass filters that attenuate undesired switching. Finally, minimum size TGs increase the V dd to ground resistance, hence decreasing leakage dissipation (0.55nW versus 0.84nW in CSM and 0.94nW in Wallace

Design of plasmonic-waveguiding structures for sensor applications

Surface plasmon resonance has become a widely accepted optical technique for studying biological and chemical interactions. Among others, detecting small changes in analyte concentration in complex solutions remains challenging, e.g., because of the need of distinguishing the interaction of interest from other effects. In our model study, the resolution ability of plasmonic sensing element was enhanced by two ways. Besides an implementation of metal-insulator-metal (MIM) plasmonic nanostructure, we suggest concatenation with waveguiding substructure to achieve mutual coupling of surface plasmon polariton (SPP) with an optical waveguiding mode. The dependence of coupling conditions on the multilayer parameters was analyzed to obtain optimal field intensity enhancement.Web of Science99art. no. 122

Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon

He1 ions were implanted at 40 keV into Si channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction

Overpressurized bubbles versus voids formed in helium implanted annealed silicon

The formation of helium induced cavities in silicon is studied as a function of implant energy (10 and 40 keV) and dose (131015, 131016, and 531016 cm22). Specimens are analyzed after annealing (800 °C, 10 min) by transmission electron microscopy (TEM) and elastic recoil detection (ERD). Cavity nucleation and growth phenomena are discussed in terms of three different regimes depending on the implanted He content. For the low (131015 cm22) and high (531016 cm22) doses our results are consistent with the information in the literature. However, at the medium dose (131016 cm22), contrary to the gas release calculations which predict the formation of empty cavities, ERD analysis shows that a measurable fraction of the implanted He is still present in the annealed samples. In this case TEM analyses reveal that the cavities are surrounded by a strong strain field contrast and dislocation loops are generated. The results obtained are discussed on the basis of an alternative nucleation and growth behavior that allows the formation of bubbles in an overpressurized state irrespective of the competition with the gas release process

Resolving the Role of Configurational Entropy in Improving Cycling Performance of Multicomponent Hexacyanoferrate Cathodes for Sodium‐Ion Batteries

Mn-based hexacyanoferrate (Mn-HCF) cathodes for Na-ion batteries usually suffer from poor reversibility and capacity decay resulting from unfavorable phase transitions and structural degradation during cycling. To address this issue, the high-entropy concept is here applied to Mn-HCF materials, significantly improving the sodium storage capabilities of this system via a solid-solution mechanism with minor crystallographic changes upon de-/sodiation. Complementary structural, electrochemical, and computational characterization methods are used to compare the behavior of high-, medium-, and low-entropy multicomponent Mn-HCFs resolving, to our knowledge for the first time, the link between configurational entropy/compositional disorder (entropy-mediated suppression of phase transitions, etc.) and cycling performance/stability in this promising class of next-generation cathode materials