Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom

The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton-manganese exchange interaction (dependent on the Mn position) and the anisotropic part of the electron-hole exchange interaction (related to the asymmetry of the quantum dot).Comment: 5 pages, 5 figures, to be published in Phys. Rev. Let

Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O

This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.Comment: 8 pages, 8 figure

Development of an extrudable paste to build mycelium-bound composites

Mycelium-bound composites are promising materials for sustainable packaging, insulation, fashion, and architecture. However, moulding is the main fabrication process explored to date, strongly limiting the ability to design the complex shapes that could widen the range of applications. Extrusion is a facile and low energy-cost process that has not yet been explored for mycelium-bound composites with design freedom and structural properties. In this study, we combine cheap, easily and commonly available agricultural waste materials, bamboo microfibres, chitosan, and mycelium from Ganodermalucidum, to establish a composite mixture that is workable, extrudable and buildable. We study the impact of bamboo fibre size, chitosan concentration, pH and weight ratio of bamboo to chitosan to determine the optimum growth condition for the mycelium as well as high mechanical stiffness. The resulting materials have thus low energy costs, are sustainable and can be shaped easily. The developed composition is promising to further explore the use of mycelium-bound materials for structural applications using agricultural waste

Primeros auxilios á los envenenados, á los ahogados, á los asfixiados, á los heridos en caso de accidente y á los enfermos en caso de indisposición repentina

Antep.Port. a varias tintas.Contiene: Catálogo de las obras publicadas por la Revista de Medicina y Cirugía Prácticas con port. y pie de imprenta, 12 p

Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor

We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.Comment: Revtex, 4 pages, 3 figures (eps), Definition of spin pilarization changed to standard definition in GMR, some straight forward algebra removed. To appear as PRB Rap. Comm. August 15t

Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K

Rational Symplectic Field Theory for Legendrian knots

We construct a combinatorial invariant of Legendrian knots in standard contact three-space. This invariant, which encodes rational relative Symplectic Field Theory and extends contact homology, counts holomorphic disks with an arbitrary number of positive punctures. The construction uses ideas from string topology.Comment: 58 pages, many figures; v3: minor corrections; final version, to appear in Inventiones Mathematica

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While previous reports state that GaMnAs layers thinner than 50 \AA are paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 \AA) and thick (above 50 \AA) GaMnAs layers.Comment: Proceedings of 4th International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology, September 23 - 28 (2001), Warszawa, Poland, to appear in Thin Solid Films. 24 pages, 8 figure