A versatile dual spot laser scanning confocal microscopy system for advanced fluorescence correlation spectroscopy analysis in living cell

A fluorescence correlation spectroscopy (FCS) system based on two independent measurement volumes is presented. The optical setup and data acquisition hardware are detailed, as well as a complete protocol to control the location, size and shape of the measurement volumes. A method that allows to monitor independently the excitation and collection efficiency distribution is proposed. Finally, a few examples of measurements that exploit the two spots in static and/or scanning schemes, are reported.Comment: Accepted for publication in Review of Scientific Instrumen

Harmonised Principles for Public Participation in Quality Assurance of Integrated Water Resources Modelling

The main purpose of public participation in integrated water resources modelling is to improve decision-making by ensuring that decisions are soundly based on shared knowledge, experience and scientific evidence. The present paper describes stakeholder involvement in the modelling process. The point of departure is the guidelines for quality assurance for `scientific` water resources modelling developed under the EU research project HarmoniQuA, which has developed a computer based Modelling Support Tool (MoST) to provide a user-friendly guidance and a quality assurance framework that aim for enhancing the credibility of river basin modelling. MoST prescribes interaction, which is a form of participation above consultation but below engagement of stakeholders and the public in the early phases of the modelling cycle and under review tasks throughout the process. MoST is a flexible tool which supports different types of users and facilitates interaction between modeller, manager and stakeholders. The perspective of using MoST for engagement of stakeholders e.g. higher level participation throughout the modelling process as part of integrated water resource management is evaluate

Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.Comment: 3 figures, submitted for publicatio

Microphotoluminescence study of disorder in ferromagnetic (Cd,Mn)Te quantum well

Microphotoluminescence mapping experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically in the same run. We show that the fluctuations of the carrier density are the main mechanism responsible for the fluctuations of the spontaneous magnetization in the ferromagnetic phase, while those of the Mn spin density have no detectable effect at this scale of observation.Comment: 4 pages, 3 figure

p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd1−x_{1-x}Mnx_xTe quantum wells

We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.Comment: 4 figure

Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O

This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.Comment: 8 pages, 8 figure

Excitonic giant Zeeman effect in GaN:Mn^3+

We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free carriers in GaN, N_0(alpha-beta)=-1.2 +/- 0.2 eV. Assuming a reasonable value of alpha, this implies a positive sign of beta which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes.Comment: 4 pages, 4 figure

Ferromagnetic (Ga,Mn)N epilayers versus antiferromagnetic GaMn3_3N clusters

Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements show that the incorporation of Mn strongly depends on the conditions of the growth. Hysteresis loops which persist at high temperature do not appear to be correlated to the presence of Mn. Samples with up to 2% Mn are purely substitutional Ga$_{1-x}$Mn$_x$N epilayers, and exhibit paramagnetic properties. At higher Mn contents, precipitates are formed which are identified as GaMn$_3$N clusters by x-ray diffraction and absorption: this induces a decrease of the paramagnetic magnetisation. Samples co-doped with enough Mg exhibit a new feature: a ferromagnetic component is observed up to $T_c\sim175$ K, which cannot be related to superparamagnetism of unresolved magnetic precipitates.Comment: Revised versio