Method of forming three-dimensional semiconductor structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of three-dimensional, exemplary electronic devices are disclosed

The relation of spring pollen release to weather in Fairbanks, AK

Thesis (M.S.) University of Alaska Fairbanks, 2012Twenty-three years of pollen data for Fairbanks have been analyzed and related to meteorological data (temperature, wind, relative humidity and precipitation). The purpose of this research is to develop quantitative statistical relationships between weather parameters and the timing and magnitude of pollen release for four taxa native to the Fairbanks area (birch, alder spruce and grass). During the spring and early summer in Fairbanks, dry, sunny and breezy days are common. These conditions are ideal for establishing an unstable boundary layer and its accompanying convective circulation, which can loft large quantities of pollen into the atmosphere. The timing of pollen release varies from season to season by as many as 24 days. Growing degree days based upon daily maximum temperatures and daily minimum relative humidity are the parameters which best define the timing of the onset of significant pollen release. The day-to-day concentration of pollen and the seasonal totals of pollen released can vary by more than an order of magnitude. Weather plays an important part in this because the release of pollen is a result of a drying process accompanied by turbulent circulation, which disperses the pollen

Selective formation of porous silicon

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature

A Philosophical Analysis of Otherness in Nietzsche\u27s Thus Spoke Zarathustra

Bertrand Russell infamously characterizes Nietzsche as a philosopher concerned solely with the flourishing individual. Several crucial passages of Nietzsche’s Thus Spoke Zarathustra, however, outline rich encounters Zarathustra has with the Other. In this paper, I argue that Russell’s characterization of Nietzsche is egregiously reductive. In order to demonstrate this, I offer an in-depth analysis of otherness in Thus Spoke Zarathustra by examining the many different kinds of relationships the individual can have with the Other. I then turn towards other works of Nietzsche to furnish the compelling, yet imprecise insight concerning otherness that Zarathustra gives us. Finally, I compare my account of otherness with orthodox interpretations of other key Nietzschean concepts to check its compatibility. All of this is to conclude that Nietzsche’s account of otherness throughout his work is robust and undeniably rich. While there are many areas of seeming tension, he ultimately sets forth many reasons for individuals, who are perhaps concerned solely with their personal flourishing, to substantiate relationships with the Other. In doing so, I argue, the individual can become aware of new avenues to flourish more fully

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques

Donne and Herbert: Constructing a religious identity amidst powerful cultural forces

U sklopu završnog rada implementiran je sustav ad hoc pokretne društvene mreže za međusobnu razmjenu lokacijske informacije skupine korisnika. Sustav je temeljen na protokolu XMPP te nudi razmjenu lokacijskih informacija u stvarnom vremenu. U sklopu sustava implementirani su logički poslužitelj, izveden u programskom jeziku Java, i klijentska aplikacija, za operacijski sustav Android. Oni, zajedno u komunikaciji s poslužiteljem XMPP, pružaju funkcionalnost međusobne razmjene lokacijskih informacija skupa korisnika pri njihovom međusobnom okupljanju. Opisano je programsko rješenje sustava, što uključuje: funkcionalnost sustava, razmještaj sustava, koncept ostvarenja funkcionalnosti, životni vijek korisničkog okupljanja unutar sustava, tijek razmjene informacija unutar sustava te implementacija klijentske aplikacije i logičkog poslužitelja.In this paper, an ad hoc mobile social network for the mutual exchange of user location information is designed and implemented. The system is based on the XMPP protocol and offers the exchange of location information in real-time. A Logic server implemented using the Java programming language and an Android client application are implemented as part of the system. While communicating with the XMPP server, they provide the functionality of an exchange of location information between users within the group which has arranged a mutual gathering. The system software solution is described and includes the following: the system functionality, system deployment, basic concept, lifecycle of a user gathering, flow of information exchange within the system, and implementation of client application and Logic server

Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced

Method of forming silicon structures with selectable optical characteristics

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization

Selective formation of porous silicon

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature