Dynamic screening of a localized hole during photoemission from a metal cluster

Recent advances in attosecond spectroscopy techniques have fueled the interest in the theoretical description of electronic processes taking place in the subfemtosecond time scale. Here we study the coupled dynamic screening of a localized hole and a photoelectron emitted from a metal cluster using a semi-classical model. Electron density dynamics in the cluster is calculated with Time-Dependent Density Functional Theory and the motion of the photoemitted electron is described classically. We show that the dynamic screening of the hole by the cluster electrons affects the motion of the photoemitted electron. At the very beginning of its trajectory, the photoemitted electron interacts with the cluster electrons that pile up to screen the hole. Within our model, this gives rise to a significant reduction of the energy lost by the photoelectron. Thus, this is a velocity dependent effect that should be accounted for when calculating the average losses suffered by photoemitted electrons in metals.Comment: 15 pages, 5 figure

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.We are grateful to Marcel Hesselberth, Daan Boltje and Ruud van Egmond for technical assistance. We thank Charles Kane for fruitful discussions and Kenji Watanabe for supplying the hBN base crystal. This work was supported by the Spanish Ministry of Economy and Competitiveness MINECO (project number FIS2013-48286-C2-1-P) and the Netherlands Organization for Scientific Research (NWO) via an NWO-Groot grant ('ESCHER'), a VIDI grant (680-47-502, S.J. v.d.M.), a VENI grant (680-47-447, J.J.) and by the FOM foundation via the 'Physics in 1D' programme. C.R.D. acknowledges support from NSF grant DMR-1463465

Spin resolved photoemission spectroscopy on WSe2

Yu SW, Lischke T, David R, et al. Spin resolved photoemission spectroscopy on WSe2. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. 1999;101-103:449-454.The electronic structure of the layered semiconductor WSe2(0001) along Delta is studied by spin resolved photoelectron spectroscopy using circularly polarized radiation from the BESSY 6.5 m NIM. The experiments have been performed in the highly symmetric setup of normal incidence and normal emission. The photon energies were varied between 8 eV and 17 eV. Our data give direct informations about the spin-orbit splittings Delta E-so in the valence bands: 0.45+/-0.1 eV, 0.32+/-0.1 eV. On the basis of a set of measured spectra, a symmetry resolved bandmapping is performed for the valence bands, which confirms a relativistic bandstructure calculation, The measured electron spin polarizations agree with the group theoretical prediction and prove the symmetry labelling derived from a labelled nonrelativistic bandstructure by using group theory to be correct. (C) 1999 Elsevier Science B.V. All rights reserved

Direct observation of electron propagation and dielectric screening on the atomic length scale

The propagation and transport of electrons in crystals is a fundamental process pertaining to the functioning of most electronic devices. Microscopic theories describe this phenomenon as being based on the motion of Bloch wave packets. These wave packets are superpositions of individual Bloch states with the group velocity determined by the dispersion of the electronic band structure near the central wavevector in momentum space. This concept has been verified experimentally in artificial superlattices by the observation of Bloch oscillations—periodic oscillations of electrons in real and momentum space. Here we present a direct observation of electron wave packet motion in a real-space and real-time experiment, on length and time scales shorter than the Bloch oscillation amplitude and period. We show that attosecond metrology (1 as = 10⁻¹⁸ seconds) now enables quantitative insight into weakly disturbed electron wave packet propagation on the atomic length scale without being hampered by scattering effects, which inevitably occur over macroscopic propagation length scales. We use sub-femtosecond (less than 10⁻¹⁵ seconds) extreme-ultraviolet light pulses to launch photoelectron wave packets inside a tungsten crystal that is covered by magnesium films of varied, well-defined thicknesses of a few ångströms. Probing the moment of arrival of the wave packets at the surface with attosecond precision reveals free-electron-like, ballistic propagation behaviour inside the magnesium adlayer—constituting the semi-classical limit of Bloch wave packet motion. Real-time access to electron transport through atomic layers and interfaces promises unprecedented insight into phenomena that may enable the scaling of electronic and photonic circuits to atomic dimensions. In addition, this experiment allows us to determine the penetration depth of electrical fields at optical frequencies at solid interfaces on the atomic scale

Nanoscale measurements of unoccupied band dispersion in few-layer graphene

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only