Measurement of the CKM angle γγ in B±→DK±B^\pm\to D K^\pm and B±→Dπ±B^\pm \to D π^\pm decays with D→KS0h+h−D \to K_\mathrm S^0 h^+ h^-

A measurement of $CP$-violating observables is performed using the decays $B^\pm\to D K^\pm$ and $B^\pm\to D \pi^\pm$, where the $D$ meson is reconstructed in one of the self-conjugate three-body final states $K_{\mathrm S}\pi^+\pi^-$ and $K_{\mathrm S}K^+K^-$ (commonly denoted $K_{\mathrm S} h^+h^-$). The decays are analysed in bins of the $D$-decay phase space, leading to a measurement that is independent of the modelling of the $D$-decay amplitude. The observables are interpreted in terms of the CKM angle $\gamma$. Using a data sample corresponding to an integrated luminosity of $9\,\text{fb}^{-1}$ collected in proton-proton collisions at centre-of-mass energies of $7$, $8$, and $13\,\text{TeV}$ with the LHCb experiment, $\gamma$ is measured to be $\left(68.7^{+5.2}_{-5.1}\right)^\circ$. The hadronic parameters $r_B^{DK}$, $r_B^{D\pi}$, $\delta_B^{DK}$, and $\delta_B^{D\pi}$, which are the ratios and strong-phase differences of the suppressed and favoured $B^\pm$ decays, are also reported

MIXAGE PAR FAISCEAU LASER PULSE DE MULTICOUCHES DE FER ET D'ALUMINIUM DEPOSE SOUS VIDE

L'étude des phases obtenues après mixage de multicouches Al-Fe par irradiation laser pulsé et par implantation à température ambiante montre que dans certaines conditions ces deux traitements conduisent aux mêmes structures recristallisées.Study of the phases obtained after mixing of multilayers of Fe-Al by laser pulse or ion implantation show that, with certain conditions, these two treatments give the same recrystallisation structures

Formation of the crystalline β\beta-C3_3N4_4 phase by dual ion beam sputtering deposition

Reprinted from Materials Letters 22 (1995) 115–118 (http://dx.doi.org/10.1016/0167-577X(94)00233-9)Preliminary investigations suggest that a crystalline carbon nitride compound corresponding to the new β-C3N4 phase can be syntasized by a dual ion beam sputtering deposition technique. Two Kaufman ion sources have been used, one for sputtering a graphite target with 1.2 keV Ar+ ions and a second one for bombarding the growing film with a 600 eV nitrogen ions beam at a temperature of 400 °C. Rutherford backscattering (RBS) analysis shows that the nitrogen content is very close to the value expected for the β-C3N4 compound. The density of the films measured by X-ray reflectometry is found to be about 3.4 compared with a theoretical value of 3.47. The microstructural state of the films has been investigated by transmission electron microscopy (TEM) and our results indicate that the films are mainly formed of small crystallized grains of 50–100 nm although the presence of a second amorphous phase is also observed. The electron diffraction patterns are in good agreement with those predicted theoretically for the new β-C3N4 phase