Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device

Global and local cutoff frequencies for transverse waves propagating along solar magnetic flux tubes

The propagation of linear transverse waves along a thin isothermal magnetic flux tube is affected by a global cutoff frequency that separates propagating and non-propagating waves. In this paper, wave propagation along a thin but non-isothermal flux tube is considered and a local cutoff frequency is derived. The effects of different temperature profiles on this local cutoff frequency are studied by considering different power-law temperature distributions as well as the semi-empirical VAL C model of the solar atmosphere. The results show that the conditions for wave propagation strongly depend on the temperature gradients. Moreover, the local cutoff frequency calculated for the VAL C model gives constraints on the range of wave frequencies that are propagating in different parts of the solar atmosphere. These theoretically predicted constraints are compared to observational data and are used to discuss the role played by transverse tube waves in the atmospheric heating and dynamics, and in the excitation of solar atmospheric oscillations.Comment: To be publishd in ApJ Vol. 763. 10 pages, 3 Postscript figure

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps

Method of construction of a multi-cell solar array

The method of constructing a high voltage, low power, multicell solar array is described. A solar cell base region is formed in a substrate such as but not limited to silicon or sapphire. A protective coating is applied on the base and a patterned etching of the coating and base forms discrete base regions. A semiconductive junction and upper active region are formed in each base region, and defined by photolithography. Thus, discrete cells which are interconnected by metallic electrodes are formed

Multilevel metallization method for fabricating a metal oxide semiconductor device

An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs

Stability of Cysteine Solutions

The stability of cysteine in acid solution increased with increase in acidity (0.1 to 6N HC 1). When the solutions were made in conductivity water and stored under nitrogen, less than 1 per cent of the cysteine was oxidixed in 7 days

The third way to 3D gravity

Consistency of Einstein’s gravitational field equation [Formula: see text] imposes a “conservation condition” on the [Formula: see text]-tensor that is satisfied by (i) matter stress tensors, as a consequence of the matter equations of motion and (ii) identically by certain other tensors, such as the metric tensor. However, there is a third way, overlooked until now because it implies a “nongeometrical” action: one not constructed from the metric and its derivatives alone. The new possibility is exemplified by the 3D “minimal massive gravity” model, which resolves the “bulk versus boundary” unitarity problem of topologically massive gravity with Anti-de Sitter asymptotics. Although all known examples of the third way are in three spacetime dimensions, the idea is general and could, in principle, apply to higher dimensional theories. AJR is supported by a grant from the London Mathematical Society, and he would also like to thank the University of Groningen for hospitality during the writing of this essay.This is the author accepted manuscript. The final version is available from World Scientific via http://dx.doi.org/10.1142/S021827181544015

Routh's procedure for non-Abelian symmetry groups

We extend Routh's reduction procedure to an arbitrary Lagrangian system (that is, one whose Lagrangian is not necessarily the difference of kinetic and potential energies) with a symmetry group which is not necessarily Abelian. To do so we analyse the restriction of the Euler-Lagrange field to a level set of momentum in velocity phase space. We present a new method of analysis based on the use of quasi-velocities. We discuss the reconstruction of solutions of the full Euler-Lagrange equations from those of the reduced equations.Comment: 30 pages, to appear in J Math Phy

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included