306 research outputs found

    Stoner-Wohlfart model applied to bicrystal magnetoresistance hysteresis

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    We calculate numerically the magnetization direction as function of magnetic field in the Stoner-Wohlfart theory and are able to reproduce the shape of the low-field magnetoresistance hysteresis observed in manganite grain boundary junctions. Moreover, we show that it is necessary to include biaxial magnetocrystalline anisotropy to fully describe the grain boundary magnetoresistance in La0.7_{0.7}Sr0.3_{0.3}MnO3_3/SrTiO3_3 bicrystal tunnel junctions.Comment: 5 pages, 4 figure

    A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

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    SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. © 2015 National Institute for Materials Science161711sciescopu

    Effects of copper fungicide spraying on volatile thiols of the varietal aroma of Sauvignon blanc, Cabernet Sauvignon and Merlot wines

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    In a three-year experiment, the effect of pre-veraison copper sprayings of vines on must composition and some volatile thiols contributing to the varietal aroma of Sauvignon blanc, Cabernet Sauvignon and Merlot wines was studied in comparison with folpet sprayings in the Bordeaux winegrowing region. The readivity of copper residues with thiols, mainly during the alcoholic fermentation, had a dramatic effect on the concentration of 4-mercapto-4-methylpentan-2-one and 3-mercaptohexanol in wines. However, copper sprayings, preferentially on the foliage, did not significantly increase copper residues in must; thiol concentrations in wines were very close to those found in wines obtained from vines sprayed with folpet. Therefore, this mode of spraying can be used to avoid the effects of copper treatment at veraison on the volatile thiols of the wines varietal aroma.

    Optical Evidence for Mixed Phase Behavior in Manganites

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    Synchrotron infrared measurements were conducted over the range 100 to 8000 cm-1 on a self-doped LaxMnO3-d (x~~0.8) film. From these measurements we determined the conductivity, the effective number of free carriers, and the specific phonon modes as a function of frequency. While the metal-insulator transition temperature (TMI) and the magnetic ordering temperature (TC) approximately coincide, the free carrier density onset occurs at a significantly lower temperature (~~45 K below). This suggests that local distortions exist below TMI and TC which trap the eg conduction electrons. These regions with local distortions constitute an insulating phase which persists for temperatures significantly below TMI and TC. The initial large drop in resistivity is due to the enhanced magnetic ordering while further drops correspond to reductions in the insulating phase which increase the number of free carriers.Comment: 12 pages, 5 figure

    Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

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    Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO2 is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH3. (c) 2006 American Institute of Physics

    Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

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    In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical insights and design guidelines for the operation of FTJs as multilevel synaptic devices

    Studies of colossal magnetoresistive oxides with radioactive isotopes

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    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\ \\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO3+δ_{3+ \delta} and La1−x_{1-x}Rx_{x}MnO3_{3} with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\ \\ b) Studies of self doped Lax_{x}R1−x_{1-x}MnO3+δ_{3+\delta} systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\ \\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase instability: - Investigating the local environment of ions at the Mn site, which trigger the ferromagnetic phase. Our approach to study these problems, combines complementary techniques such as Perturbed Angular Correlation, Emission Channeling and Electrical/Magnetic Measurements in pellets, single crystals and high quality thin films of CMR oxides doped with radioactive isotopes. Preliminary results obtained in La Cd MnO3+x_{3+x} pellets and thin films implanted with 111m^{111m}Cd are also presented

    Nature of Nitrogen Incorporation in BiVO4 Photoanodes through Chemical and Physical Methods

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    In recent years, BiVO4 has been optimized as a photoanode material to produce photocurrent densities close to its theoretical maximum under AM1.5 solar illumination. Its performance is, therefore, limited by its 2.4 amp; 8201;eV bandgap. Herein, nitrogen is incorporated into BiVO4 to shift the valence band position to higher energies and thereby decreases the bandgap. Two different approaches are investigated modification of the precursors for the spray pyrolysis recipe and post amp; 8208;deposition nitrogen ion implantation. Both methods result in a slight red shift of the BiVO4 bandgap and optical absorption onset. Although previous reports on N amp; 8208;modified BiVO4 assumed individual nitrogen atoms to substitute for oxygen, X amp; 8208;ray photoelectron spectroscopy on the samples reveals the presence of molecular nitrogen i.e., N2 . Density functional theory calculations confirm the thermodynamic stability of the incorporation and reveal that N2 coordinates to two vanadium atoms in a bridging configuration. Unfortunately, nitrogen incorporation also results in the formation of a localized state of amp; 8776;0.1 amp; 8201;eV below the conduction band minimum of BiVO4, which suppresses the photoactivity at longer wavelengths. These findings provide important new insights on the nature of nitrogen incorporation into BiVO4 and illustrate the need to find alternative lower amp; 8208;bandgap absorber materials for photoelectrochemical energy conversion application
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