38 research outputs found
ΠΠΠΠΠΠΠ ΠΠΠΠΠΠ Π ΠΠΠΠΠΠ Π ΠΠΠΠ’Π« Π‘Π£ΠΠΠΠ«Π₯ ΠΠΠ’Π ΠΠΠΠ’ΠΠΠΠ ΠΠΠΠΠ’Π ΠΠΠΠΠ ΠΠΠ Π‘ ΠΠ‘ΠΠΠΠ¬ΠΠΠΠΠΠΠΠ ΠΠΠΠΠ ΠΠΠ Π‘ΠΠ‘Π’ΠΠ―ΠΠΠ
The simulation of operational modes of autonomous power system electrical loads for composition of loads and generators patterns, which can be used for load forecast algorithms verification and energy efficiency of the system estimation, is discussed. The probabilistic automata using for simulation of technological processes in the system and of loads commutations processes was revealed to be able to represent correlation between the loads. The model of the power system, consisting of the interdependent parallel automata network, the signal conditioning block and the generators management block and having the communication links with the database for simulation results processing, is proposed.Β References 8, figures 4.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½ΠΎ ΠΈΠΌΠΈΡΠ°ΡΠΈΠΎΠ½Π½ΠΎΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ°Π±ΠΎΡΡ ΠΏΠΎΡΡΠ΅Π±ΠΈΡΠ΅Π»Π΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΡΠ½Π΅ΡΠ³ΠΈΠΈ Π² Π°Π²ΡΠΎΠ½ΠΎΠΌΠ½ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΎΡΠ½Π΅ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠ°Ρ
Ρ ΡΠ΅Π»ΡΡ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΡΡΡΠΎΡΠ½ΡΡ
Π³ΡΠ°ΡΠΈΠΊΠΎΠ² Π½Π°Π³ΡΡΠ·ΠΊΠΈ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ ΠΈ ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΠ°Π±ΠΎΡΡ Π³Π΅Π½Π΅ΡΠ°ΡΠΎΡΠ½ΡΡ
Π°Π³ΡΠ΅Π³Π°ΡΠΎΠ², ΠΊΠΎΡΠΎΡΡΠ΅ ΠΌΠΎΠ³ΡΡ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Ρ Π΄Π»Ρ Π²Π΅ΡΠΈΡΠΈΠΊΠ°ΡΠΈΠΈ Π°Π»Π³ΠΎΡΠΈΡΠΌΠΎΠ² ΠΏΡΠΎΠ³Π½ΠΎΠ·ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π½Π°Π³ΡΡΠ·ΠΊΠΈ ΠΈ ΡΠ°ΡΡΠ΅ΡΠ° ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Π΅ΠΉ ΡΠ½Π΅ΡΠ³ΠΎΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ. ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½ΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΠ½ΡΡ
Π°Π²ΡΠΎΠΌΠ°ΡΠΎΠ² Π΄Π»Ρ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ², ΠΎΠ±ΡΡΠ»Π°Π²Π»ΠΈΠ²Π°ΡΡΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΠ°Π±ΠΎΡΡ ΠΏΠΎΡΡΠ΅Π±ΠΈΡΠ΅Π»Π΅ΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΡΠ½Π΅ΡΠ³ΠΈΠΈ, ΠΈ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² ΠΊΠΎΠΌΠΌΡΡΠ°ΡΠΈΠΈ ΠΏΠΎΡΡΠ΅Π±ΠΈΡΠ΅Π»Π΅ΠΉ, ΡΡΠΎ ΠΏΠΎΠ·Π²ΠΎΠ»ΠΈΡ ΡΡΠ΅ΡΡΡ ΠΊΠΎΡΡΠ΅Π»ΡΡΠΈΠΎΠ½Π½ΡΠ΅ ΡΠ²ΡΠ·ΠΈ ΠΌΠ΅ΠΆΠ΄Ρ ΡΠ΅ΠΆΠΈΠΌΠ°ΠΌΠΈ ΠΈΡ
ΡΠ°Π±ΠΎΡΡ. ΠΡΠΈΠ²Π΅Π΄Π΅Π½ΠΎ ΠΌΠΎΠ΄Π΅Π»Ρ ΡΠ»Π΅ΠΊΡΡΠΎΡΠ½Π΅ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ, ΡΠΎΡΡΠΎΡΡΠ΅ΠΉ ΠΈΠ· ΡΠ΅ΡΠΈ ΠΏΠ°ΡΠ°Π»Π»Π΅Π»ΡΠ½ΡΡ
Π²Π·Π°ΠΈΠΌΠΎΠ·Π°Π²ΠΈΡΠΈΠΌΡΡ
Π°Π²ΡΠΎΠΌΠ°ΡΠΎΠ², Π±Π»ΠΎΠΊΠΎΠ² Π½ΠΎΡΠΌΠ°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΡΠΈΠ³Π½Π°Π»ΠΎΠ² ΠΈ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ΅ΠΆΠΈΠΌΠ°ΠΌΠΈ ΡΠ°Π±ΠΎΡΡ Π³Π΅Π½Π΅ΡΠ°ΡΠΎΡΠ½ΡΡ
Π°Π³ΡΠ΅Π³Π°ΡΠΎΠ² ΠΈ ΠΈΠΌΠ΅ΡΡΠ΅ΠΉ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΠΊΠΎΠΌΠΌΡΠ½ΠΈΠΊΠ°ΡΠΈΠΈ Ρ ΡΠΈΡΡΠ΅ΠΌΠΎΠΉ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ Π±Π°Π·Π°ΠΌΠΈ Π΄Π°Π½Π½ΡΡ
Π΄Π»Ρ Ρ
ΡΠ°Π½Π΅Π½ΠΈΡ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
Π² ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π΄Π°Π½Π½ΡΡ
.Β ΠΠΈΠ±Π». 8, ΡΠΈΡ. 4.Π ΠΎΠ·Π³Π»ΡΠ½ΡΡΠΎ ΡΠΌΡΡΠ°ΡΡΠΉΠ½Π΅ ΠΌΠΎΠ΄Π΅Π»ΡΠ²Π°Π½Π½Ρ ΡΠΎΠ±ΠΎΡΠΈ ΡΠΏΠΎΠΆΠΈΠ²Π°ΡΡΠ² Π΅Π»Π΅ΠΊΡΡΠΎΠ΅Π½Π΅ΡΠ³ΡΡ Π² Π°Π²ΡΠΎΠ½ΠΎΠΌΠ½ΠΈΡ
Π΅Π»Π΅ΠΊΡΡΠΎΠ΅Π½Π΅ΡΠ³Π΅ΡΠΈΡΠ½ΠΈΡ
ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠ°Ρ
Π· ΠΌΠ΅ΡΠΎΡ ΠΎΡΡΠΈΠΌΠ°Π½Π½Ρ Π΄ΠΎΠ±ΠΎΠ²ΠΈΡ
Π³ΡΠ°ΡΡΠΊΡΠ² Π½Π°Π²Π°Π½ΡΠ°ΠΆΠ΅Π½Π½Ρ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ ΡΠ° ΡΠ΅ΠΆΠΈΠΌΡΠ² ΡΠΎΠ±ΠΎΡΠΈ Π³Π΅Π½Π΅ΡΡΡΡΠΈΡ
Π°Π³ΡΠ΅Π³Π°ΡΡΠ², ΡΠΊΡ ΠΌΠΎΠΆΡΡΡ Π±ΡΡΠΈ Π²ΠΈΠΊΠΎΡΠΈΡΡΠ°Π½Ρ Π΄Π»Ρ Π²Π΅ΡΡΡΡΠΊΠ°ΡΡΡ Π°Π»Π³ΠΎΡΠΈΡΠΌΡΠ² ΠΏΡΠΎΠ³Π½ΠΎΠ·ΡΠ²Π°Π½Π½Ρ Π½Π°Π²Π°Π½ΡΠ°ΠΆΠ΅Π½Π½Ρ ΡΠ° ΡΠΎΠ·ΡΠ°Ρ
ΡΠ½ΠΊΡ ΠΏΠΎΠΊΠ°ΠΆΡΠΈΠΊΡΠ² Π΅Π½Π΅ΡΠ³ΠΎΠ΅ΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ. ΠΠ°ΠΏΡΠΎΠΏΠΎΠ½ΠΎΠ²Π°Π½ΠΎ Π²ΠΈΠΊΠΎΡΠΈΡΡΠ°Π½Π½Ρ ΠΉΠΌΠΎΠ²ΡΡΠ½ΡΡΠ½ΠΈΡ
Π°Π²ΡΠΎΠΌΠ°ΡΡΠ² Π΄Π»Ρ ΠΌΠΎΠ΄Π΅Π»ΡΠ²Π°Π½Π½Ρ ΠΏΡΠΎΡΠ΅ΡΡΠ², ΡΠΎ ΠΎΠ±ΡΠΌΠΎΠ²Π»ΡΡΡΡ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΠ΅ΠΆΠΈΠΌΡΠ² ΡΠΎΠ±ΠΎΡΠΈ ΡΠΏΠΎΠΆΠΈΠ²Π°ΡΡΠ², ΡΠ° ΠΏΡΠΎΡΠ΅ΡΡΠ² ΠΊΠΎΠΌΡΡΠ°ΡΡΡ ΡΠΏΠΎΠΆΠΈΠ²Π°ΡΡΠ², ΡΠΎ Π΄ΠΎΠ·Π²ΠΎΠ»ΠΈΡΡ Π²ΡΠ°Ρ
ΡΠ²Π°ΡΠΈ ΠΊΠΎΡΠ΅Π»ΡΡΡΠΉΠ½Ρ Π·Π²βΡΠ·ΠΊΠΈ ΠΌΡΠΆ ΡΠ΅ΠΆΠΈΠΌΠ°ΠΌΠΈ ΡΡ
ΡΠΎΠ±ΠΎΡΠΈ. ΠΠ°Π²Π΅Π΄Π΅Π½ΠΎ ΠΌΠΎΠ΄Π΅Π»Ρ Π΅Π»Π΅ΠΊΡΡΠΎΠ΅Π½Π΅ΡΠ³Π΅ΡΠΈΡΠ½ΠΎΡ ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠΈ, ΡΠΊΠ° ΡΠΊΠ»Π°Π΄Π°ΡΡΡΡΡ Π· ΠΌΠ΅ΡΠ΅ΠΆΠΈ ΠΏΠ°ΡΠ°Π»Π΅Π»ΡΠ½ΠΈΡ
Π²Π·Π°ΡΠΌΠΎΠΏΠΎΠ²βΡΠ·Π°Π½ΠΈΡ
Π°Π²ΡΠΎΠΌΠ°ΡΡΠ², Π±Π»ΠΎΠΊΡΠ² Π½ΠΎΡΠΌΠ°Π»ΡΠ·Π°ΡΡΡ ΡΠΈΠ³Π½Π°Π»ΡΠ² ΡΠ° ΠΊΠ΅ΡΡΠ²Π°Π½Π½Ρ ΡΠ΅ΠΆΠΈΠΌΠ°ΠΌΠΈ ΡΠΎΠ±ΠΎΡΠΈ Π³Π΅Π½Π΅ΡΡΡΡΠΈΡ
Π°Π³ΡΠ΅Π³Π°ΡΡΠ² ΡΠ° ΡΠΊΠ° ΠΌΠ°Ρ Π·Π°ΡΠΎΠ±ΠΈ ΠΊΠΎΠΌΡΠ½ΡΠΊΠ°ΡΡΡ Π· ΡΠΈΡΡΠ΅ΠΌΠΎΡ ΠΊΠ΅ΡΡΠ²Π°Π½Π½Ρ Π±Π°Π·Π°ΠΌΠΈ Π΄Π°Π½ΠΈΡ
Π΄Π»Ρ Π·Π±Π΅ΡΠ΅ΠΆΠ΅Π½Π½Ρ ΠΎΡΡΠΈΠΌΠ°Π½ΠΈΡ
Π² ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΌΠΎΠ΄Π΅Π»ΡΠ²Π°Π½Π½Ρ Π΄Π°Π½ΠΈΡ
.Β ΠΡΠ±Π». 8, ΡΠΈΡ. 4
Aharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields
We report a comprehensive discussion of quantum interference effects due to
the finite structure of excitons in quantum rings and their first experimental
corroboration observed in the optical recombinations. Anomalous features that
appear in the experiments are analyzed according to theoretical models that
describe the modulation of the interference pattern by temperature and built-in
electric fields.Comment: 6 pages, 7 figure
InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate
Building optoelectronic devices on a Si platform has been the engine behind the development of Si photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and size relative to hybrid solutions. Although significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, IIIβV semiconductor devices offer high efficiency as optical sources. Monolithic integration of IIIβV on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-Gaussian emission spectrum of 114 nm centered at 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of IIIβV light sources required for Si photonics
Voltage recovery in charged InAs/GaAs quantum dot solar cells
The realization of high efficiency quantum dot intermediate band solar cells is challenging due to the thermally activated charge escaping at high temperatures. The enhancement in short circuit current of quantum dot solar cells is largely undermined by the voltage loss. In this paper, InAs/GaAs quantum dot solar cells with direct Si doping in the quantum dots are studied. The open circuit voltage is improved with increasing doping concentration in the quantum dots. The recovery of open circuit voltage as large as 105 mV is measured. This voltage recovery is attributed to suppressed charge thermal escaping from quantum dots. The suppressed thermal coupling is supported by the external quantum efficiency and photoluminescence measurements
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1βxBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018β€xβ€0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Ξ) and LOPC ALO/ALOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the LO(Ξ) phonon (ALO/ALOPC β0) for larger Bi concentrations. A method of spectral analysis is set out which yields estimates of hole concentrations in excess of 5 Γ 1017 cmβ3 and correlates with the Bi molar fraction. These findings are in general agreement with recent electrical transport measurements performed on the alloy, and while the absolute size of the hole concentrations differ, likely origins for the discrepancy are discussed. We conclude that the damped LO-phonon-hole-plasmon coupling phenomena plays a dominant role in Raman scattering from unpassivated nominally undoped GaAsBi
Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures
In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vaporβliquidβsolid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation βhot spotβ at the edge of the liquidβsolid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure
THE APPLICATION OF A METHOD OF THE BOUNDARY INTEGRATED EQUATIONS FOR MODELING OF AERODYNAMIC STABILITY OF BRIDGE CONSTRUCTION
The work is devoted the modeling of oscillations of bridge construction taking into ac- count the forces of damping and rigidity. The boundary integral equation (BIE) in velocities of a multizonal body (gas + construction) is supplemented BIE oscillations of an elastic body (construction) that allows to find the increase of amplitude of their oscillation
THE APPLICATION OF A METHOD OF BOUNDARY INTEGRAL EQUATIONS OF A THEORY OF ELASTICITY FOR MODELING OF AEROELASTICITY OF BRIDGE STRUCTURES
This work describes modeling of winding of bridge structures by the wind flow for non- bound systems with an application of a method of the boundary integral equations and is de- voted to aerodynamical analysis of bound systems of interaction of solid bodies and gas, i.e. to aeroelasticity of span structures and pylons. The solutions of the 'wind flow - bridge struc- tures' interaction problems in the form of multi zonal and variation approaches are shown in the theoretical part
ΠΠΎΠ΄Π΅Π»Ρ ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΈ ΠΆΠΈΠ·Π½Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠΈΠΊΠ»Π° ΠΌΠ΅Π΄ΠΈΡΠΈΠ½ΡΠΊΠΎΠ³ΠΎ Π·Π΄Π°Π½ΠΈΡ
ΠΠ²Π΅Π΄Π΅Π½ΠΈΠ΅. ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ ΠΊ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ΅ ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΎΠ½Π½ΠΎ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΆΠΈΠ·Π½Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠΈΠΊΠ»Π° Π·Π΄Π°Π½ΠΈΡ ΠΌΠ΅Π΄ΠΈΡΠΈΠ½ΡΠΊΠΎΠ³ΠΎ ΡΡΡΠ΅ΠΆΠ΄Π΅Π½ΠΈΡ. ΠΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅, ΡΡΡΠΎΠΈΡΠ΅Π»ΡΡΡΠ²ΠΎ ΠΈ ΡΠΊΡΠΏΠ»ΡΠ°ΡΠ°ΡΠΈΡ Π·Π΄Π°Π½ΠΈΠΉ ΠΌΠ΅Π΄ΠΈΡΠΈΠ½ΡΠΊΠΈΡ
ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΉ ΠΈΠΌΠ΅ΡΡ ΡΡΠ΄ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠ΅ΠΉ. Π Π·Π΄Π°Π½ΠΈΡΠΌ ΡΠ΄Π΅ΡΠ½ΠΎΠΉ ΠΌΠ΅Π΄ΠΈΡΠΈΠ½Ρ ΠΏΡΠ΅Π΄ΡΡΠ²Π»ΡΡΡΡΡ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎ Π²ΡΡΠΎΠΊΠΈΠ΅ ΡΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΡ ΡΠ°Π΄ΠΈΠ°ΡΠΈΠΎΠ½Π½ΠΎΠΉ ΠΈ ΠΏΠΎΠΆΠ°ΡΠ½ΠΎΠΉ Π±Π΅Π·ΠΎΠΏΠ°ΡΠ½ΠΎΡΡΠΈ. ΠΠ°ΡΠ΅ΡΠΈΠ°Π»Ρ ΠΈ ΠΌΠ΅ΡΠΎΠ΄Ρ. ΠΠ»Ρ ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ, ΡΡΡΠΎΠΈΡΠ΅Π»ΡΡΡΠ²Π° ΠΈ ΡΠΊΡΠΏΠ»ΡΠ°ΡΠ°ΡΠΈΠΈ Π·Π΄Π°Π½ΠΈΠΉ ΠΌΠ΅Π΄ΠΈΡΠΈΠ½ΡΠΊΠΈΡ
ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΉ ΡΠ΅Π»Π΅ΡΠΎΠΎΠ±ΡΠ°Π·Π½ΠΎ ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ ΠΈ ΡΠ°Π·Π²ΠΈΡΠΈΠ΅ ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΎΠ½Π½ΠΎ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΆΠΈΠ·Π½Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠΈΠΊΠ»Π° Π·Π΄Π°Π½ΠΈΡ ΠΌΠ΅Π΄ΠΈΡΠΈΠ½ΡΠΊΠΎΠ³ΠΎ ΡΡΡΠ΅ΠΆΠ΄Π΅Π½ΠΈΡ. Π’Π°ΠΊΠ°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΡΠΎΠ·Π΄Π°Π½Π° Π°Π²ΡΠΎΡΠΎΠΌ Π² Π²ΠΈΠ΄Π΅ ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°ΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ Π±ΠΈΠ·Π½Π΅Ρ-ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ². ΠΠΎΠ΄ΡΠ²Π΅ΡΠΆΠ΄Π΅Π½ΠΈΠ΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΌΠ½ΠΎΠ³ΠΎΠΊΡΠΈΡΠ΅ΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΡΠΊΡΠΏΠ΅ΡΡΠ½ΠΎΠΉ ΠΎΡΠ΅Π½ΠΊΠΈ. Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ. ΠΠ»Ρ ΡΠ΅ΡΠ΅Π½ΠΈΡ ΡΠΊΠ°Π·Π°Π½Π½ΠΎΠΉ ΠΏΡΠΎΠ±Π»Π΅ΠΌΡ Π°Π²ΡΠΎΡ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠΈΠ» ΡΡΠ΄ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΉ Π² ΠΏΠΎΡΡΠ΄ΠΎΠΊ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ΠΈΡ ΠΈΠ½Π²Π΅ΡΡΠΈΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΏΡΠΎΠ΅ΠΊΡΠ°. ΠΠΎΠ²ΡΠΌ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠΌ ΡΠ²Π»ΡΠ΅ΡΡΡ ΠΡΠ΅Π΄Π²Π°ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ΅ ΠΎΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΠΉ ΠΊ ΠΎΠ±ΡΠ΅ΠΊΡΡ Π·Π΄ΡΠ°Π²ΠΎΠΎΡ
ΡΠ°Π½Π΅Π½ΠΈΡ. ΠΠ½ΠΎ Π΄ΠΎΠ»ΠΆΠ½ΠΎ ΡΡΠ°ΡΡ ΠΎΠ±ΡΠ·Π°ΡΠ΅Π»ΡΠ½ΡΠΌ Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠΎΠΌ ΠΏΡΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΠΈ Π³ΡΠ°Π΄ΠΎΡΡΡΠΎΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠ»Π°Π½Π° Π·Π΅ΠΌΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΡΠ°ΡΡΠΊΠ°, ΡΠ²Π»ΡΡΡΠ΅Π³ΠΎΡΡ Π΄Π΅-ΡΠ°ΠΊΡΠΎ ΡΠ°Π·ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ΠΌ Π½Π° ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅. ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½ΠΎ ΡΠ°ΠΊΠΆΠ΅ ΡΠΎΡΡΠ°Π²Π»ΡΡΡ ΡΠ΅Ρ
Π½ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΡ ΡΡΠ΅Ρ
ΡΡΠΎΠ²Π½Π΅ΠΉ. Π’ΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΡ ΠΏΠ΅ΡΠ²ΠΎΠ³ΠΎ ΡΡΠΎΠ²Π½Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π΄Π»Ρ ΠΏΡΠΎΡΠ΅Π΄ΡΡ ΠΏΡΠ΅Π΄ΠΏΡΠΎΠ΅ΠΊΡΠ½ΠΎΠΉ ΡΡΠ°Π΄ΠΈΠΈ. Π’ΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΡ Π²ΡΠΎΡΠΎΠ³ΠΎ ΡΡΠΎΠ²Π½Ρ Π²Ρ
ΠΎΠ΄ΡΡ Π² ΠΌΠ΅Π΄ΠΈΠΊΠΎ-ΡΠ΅Ρ
Π½ΠΈΡΠ΅ΡΠΊΠΎΠ΅ Π·Π°Π΄Π°Π½ΠΈΠ΅ Π½Π° ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅. Π’ΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΡ ΡΡΠ΅ΡΡΠ΅Π³ΠΎ ΡΡΠΎΠ²Π½Ρ ΠΏΡΠ΅Π΄ΡΡΠ²Π»ΡΡΡΡΡ ΠΊ ΡΠ°Π±ΠΎΡΠ΅ΠΉ Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠ°ΡΠΈΠΈ, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΊ ΡΡΡΠΎΠΈΡΠ΅Π»ΡΡΡΠ²Ρ ΠΈ ΡΠΊΡΠΏΠ»ΡΠ°ΡΠ°ΡΠΈΠΈ ΠΎΠ±ΡΠ΅ΠΊΡΠ°. Π’ΡΠ΅Π±ΠΎΠ²Π°Π½ΠΈΡ Π²ΠΊΠ»ΡΡΠ°ΡΡΡΡ Π² ΡΠΈΡΡΠ΅ΠΌΡ ΠΈ ΠΏΡΠΎΠ²Π΅ΡΡΡΡΡΡ Π½Π° ΠΊΠ»ΡΡΠ΅Π²ΡΡ
ΡΡΠ°ΠΏΠ°Ρ
ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠ°. ΠΠ° ΠΏΡΠ΅Π΄ΠΏΡΠΎΠ΅ΠΊΡΠ½ΠΎΠΉ ΡΡΠ°Π΄ΠΈΠΈ ΡΠ΅Π»Π΅ΡΠΎΠΎΠ±ΡΠ°Π·Π½ΠΎ ΡΠΎΡΡΠ°Π²Π»ΡΡΡ ΡΠ°ΠΊΠΆΠ΅ ΡΠ΅Ρ
Π½ΠΈΠΊΠΎ-ΡΠΊΠΎΠ½ΠΎΠΌΠΈΡΠ΅ΡΠΊΠΈΠΉ ΡΠ°ΡΡΠ΅Ρ Ρ ΠΎΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
ΡΠ΅Ρ
Π½ΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ΅ΡΠ΅Π½ΠΈΠΉ ΠΈ ΡΠ΅Ρ
Π½ΠΈΠΊΠΎ-ΡΠΊΠΎΠ½ΠΎΠΌΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Π΅ΠΉ. Π ΡΡΠΎΠΌ Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠ΅ Π΄ΠΎΠ»ΠΆΠ΅Π½ ΡΠ°ΠΊΠΆΠ΅ ΠΏΡΠΈΡΡΡΡΡΠ²ΠΎΠ²Π°ΡΡ ΠΏΠ»Π°Π½ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΏΡΠΎΠ΅ΠΊΡΠΎΠΌ. ΠΠΎΠ²ΡΠ΅ ΡΠ»Π΅ΠΌΠ΅Π½ΡΡ Π²ΠΊΠ»ΡΡΠ°ΡΡΡΡ Π² ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΎΠ½Π½ΠΎ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΡΠ°ΠΏΠΎΠ² ΠΆΠΈΠ·Π½Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠΈΠΊΠ»Π° ΠΎΠ±ΡΠ΅ΠΊΡΠ°. ΠΡΠ²ΠΎΠ΄Ρ. ΠΠ° ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠΈ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½ΠΎ Π²Π½Π΅ΡΡΠΈ ΠΊΠΎΡΡΠ΅ΠΊΡΠΈΠ²Ρ Π² Π½ΠΎΡΠΌΠ°ΡΠΈΠ²Π½ΠΎ-ΡΠ΅Ρ
Π½ΠΈΡΠ΅ΡΠΊΠΈΠ΅ Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΡ, ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΠΌΡΠ΅ ΠΏΡΠΈ ΠΎΡΠ³Π°Π½ΠΈΠ·Π°ΡΠΈΠΈ ΡΡΡΠΎΠΈΡΠ΅Π»ΡΡΡΠ²Π°. ΠΠ°ΠΏΡΠΈΠΌΠ΅Ρ, Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎ ΡΠ΄Π΅Π»Π°ΡΡ ΠΎΠ±ΡΠ·Π°ΡΠ΅Π»ΡΠ½ΡΠΌ ΡΠΎΡΡΠ°Π²Π»Π΅Π½ΠΈΠ΅ Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠΎΠ² ΠΏΡΠ΅Π΄ΠΏΡΠΎΠ΅ΠΊΡΠ½ΠΎΠΉ ΡΡΠ°Π΄ΠΈΠΈ. ΠΡΠΈ ΡΠ°Π±ΠΎΡΡ Π΄ΠΎΠ»ΠΆΠ½Ρ Π±ΡΡΡ ΠΎΠΏΠ»Π°ΡΠ΅Π½Ρ Π·Π° ΡΡΠ΅Ρ ΠΈΠ½Π²Π΅ΡΡΠΎΡΠ°, ΠΏΠΎΡΡΠΎΠΌΡ Π½ΠΎΡΠΌΠ°ΡΠΈΠ² ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠ½ΡΡ
ΡΠ°Π±ΠΎΡ ΠΏΠΎΡΡΠ΅Π±ΡΠ΅ΡΡΡ ΡΠ²Π΅Π»ΠΈΡΠΈΡΡ