25 research outputs found

    Analysis of leakage properties and guiding conditions of rib antiresonant reflecting optical waveguides

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    Power leakage properties and guiding conditions of rib antiresonant reflecting optical waveguides (rib-ARROW) have been theoretically and experimentally studied as a function of wavelength and polarization of the light for different geometrical and optical parameters that characterize the rib-ARROW structure. Obtained results show that rib-ARROWs can only be fabricated with low losses in a wavelength range when determined rib configurations are adopted. Furthermore, these waveguides exhibit a polarization sensitivity that largely depends on the core-substrate refractive index difference. Together with the experimental results, theoretical calculations from different modeling methods are also presented and discussed

    Low-loss inverted taper edge coupler in silicon nitride

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    "This paper is a postprint of a paper submitted to and accepted for publication in IET Optoelectronics and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library"[EN] An inverted lateral taper with one vertical discrete step was designed for a medium confinement silicon nitride waveguide platform in the C-band, as a chip edge coupler, with a predicted insertion loss of 0.58¿dB. The design is supported by an extensive study to evaluate the impact of fabrication process variations on the performance of such a coupler. The device was manufactured and measured, showing an insertion loss of 1.47 dB, which was traced back to fabrication process variations as cross-checked with simulations. To the authors¿ knowledge, the reported edge coupler is the shortest and among the best performing found for silicon nitride platforms.The authors acknowledge financial support through projects TEC2015-69787-REDT PIC4TB, TEC2016-80385-P SINXPECT, TEC2014-54449-C3-1-R, GVA PROMETEO 2017/103, EC H2020-ICT-27-2015 PICs4all CSA 68777.Fernández-Vicente, J.; Baños Lopez, R.; Doménech Gómez, JD.; Domínguez-Horna, C.; Muñoz Muñoz, P. (2019). Low-loss inverted taper edge coupler in silicon nitride. IET Optoelectronics. 13(2):62-66. https://doi.org/10.1049/iet-opt.2018.5065S6266132Marcatili, E. A. J. (1969). Dielectric Rectangular Waveguide and Directional Coupler for Integrated Optics. Bell System Technical Journal, 48(7), 2071-2102. doi:10.1002/j.1538-7305.1969.tb01166.xMiller, S. E. (1969). Integrated Optics: An Introduction. Bell System Technical Journal, 48(7), 2059-2069. doi:10.1002/j.1538-7305.1969.tb01165.xTomlinson, W. J., & Brackett, C. A. (1987). Telecommunications applications of integrated optics and optoelectronics. Proceedings of the IEEE, 75(11), 1512-1523. doi:10.1109/proc.1987.13912Lim, A. E.-J., Junfeng Song, Qing Fang, Chao Li, Xiaoguang Tu, Ning Duan, … Tsung-Yang Liow. (2014). Review of Silicon Photonics Foundry Efforts. IEEE Journal of Selected Topics in Quantum Electronics, 20(4), 405-416. doi:10.1109/jstqe.2013.2293274Smit, M., Leijtens, X., Ambrosius, H., Bente, E., van der Tol, J., Smalbrugge, B., … van Veldhoven, R. (2014). An introduction to InP-based generic integration technology. Semiconductor Science and Technology, 29(8), 083001. doi:10.1088/0268-1242/29/8/083001Taillaert, D., Bogaerts, W., Bienstman, P., Krauss, T. F., Van Daele, P., Moerman, I., … Baets, R. (2002). An out-of-plane grating coupler for efficient butt-coupling between compact planar waveguides and single-mode fibers. IEEE Journal of Quantum Electronics, 38(7), 949-955. doi:10.1109/jqe.2002.1017613Dillon, T., Murakowski, J., Shi, S., & Prather, D. (2008). Fiber-to-waveguide coupler based on the parabolic reflector. Optics Letters, 33(9), 896. doi:10.1364/ol.33.000896Li, H., Cao, Z., Lu, H., & Shen, Q. (2003). Free-space coupling of a light beam into a symmetrical metal-cladding optical waveguide. Applied Physics Letters, 83(14), 2757-2759. doi:10.1063/1.1616205Cardenas, J., Poitras, C. B., Luke, K., Luo, L.-W., Morton, P. A., & Lipson, M. (2014). High Coupling Efficiency Etched Facet Tapers in Silicon Waveguides. IEEE Photonics Technology Letters, 26(23), 2380-2382. doi:10.1109/lpt.2014.2357177Shiraishi, K., Yoda, H., Ohshima, A., Ikedo, H., & Tsai, C. S. (2007). A silicon-based spot-size converter between single-mode fibers and Si-wire waveguides using cascaded tapers. Applied Physics Letters, 91(14), 141120. doi:10.1063/1.2795337Tao, H., Song, J., Fang, Q., Yu, M., Lo, G., & Kwong, D. (2008). Improving coupling efficiency of fiber-waveguide coupling with a double-tip coupler. Optics Express, 16(25), 20803. doi:10.1364/oe.16.020803Muñoz, P., Micó, G., Bru, L., Pastor, D., Pérez, D., Doménech, J., … Domínguez, C. (2017). Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications. Sensors, 17(9), 2088. doi:10.3390/s17092088Papes, M., Cheben, P., Benedikovic, D., Schmid, J. H., Pond, J., Halir, R., … Vašinek, V. (2016). Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides. Optics Express, 24(5), 5026. doi:10.1364/oe.24.005026Cheben, P., Schmid, J. H., Wang, S., Xu, D.-X., Vachon, M., Janz, S., … Picard, M.-J. (2015). Broadband polarization independent nanophotonic coupler for silicon waveguides with ultra-high efficiency. Optics Express, 23(17), 22553. doi:10.1364/oe.23.022553Shani, Y., Henry, C. H., Kistler, R. C., Orlowsky, K. J., & Ackerman, D. A. (1989). Efficient coupling of a semiconductor laser to an optical fiber by means of a tapered waveguide on silicon. Applied Physics Letters, 55(23), 2389-2391. doi:10.1063/1.102290Zhuang, L., Marpaung, D., Burla, M., Beeker, W., Leinse, A., & Roeloffzen, C. (2011). Low-loss, high-index-contrast Si_3N_4/SiO_2 optical waveguides for optical delay lines in microwave photonics signal processing. Optics Express, 19(23), 23162. doi:10.1364/oe.19.02316

    Reconfigurable reflective arrayed waveguide grating using optimization algorithms

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    [EN] In this paper we report the experimental realization of a reconfigurable reflective arrayed waveguide grating on silicon nitride technology, using optimization algorithms borrowed from machine learning applications. A dozen of band-shape responses, as well as a spectral resolution change, are demonstrated in the optical telecom C-band, alongside a proof of operation of the same device in the O-band. In the context of programmable and reconfigurable integrated photonics, this building block supports multi-wavelength/band spectral shaping of optical signals that can serve to multiple applications.Ministerio de Economia y Competitividad (Industrial doctorate grant DI-15-08031, PID2019110877GB-I00 BHYSINPICS, TEC2016-80385-P SINXPECT); H2020 Marie Sklodowska-Curie Actions (Training Network MICROCOMB (GA 812818)); Generalitat Valenciana (PROMETEO/2017/103).Fernández, J.; Felip, J.; Gargallo, B.; Doménech, JD.; Pastor Abellán, D.; Domínguez-Horna, C.; Muñoz Muñoz, P. (2020). Reconfigurable reflective arrayed waveguide grating using optimization algorithms. Optics Express. 28(21):31446-31456. https://doi.org/10.1364/OE.404267S3144631456282

    Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

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    Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect

    Diffraction grating couplers milled in Si3N4 rib waveguides with a focused ion beam

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    Focused ion beam milling is a processing technology which allows flexible direct writing of nanometer scale features efficiently substituting electron beam lithography. No mask need results in ability for patterns writing even on fragile micromechanical devices. In this work we studied the abilities of the tool for fabrication of diffraction grating couplers in silicon nitride waveguides. The gratings were fabricated on a chip with extra fragile cantilevers of sub micron thickness. Optical characterization of the couplers was done using excitation of the waveguides in visible range by focused Gaussian beams of different waist sizes. Influence of Ga+ implantation on the device performance was studied

    Diffraction grating couplers milled in Si3N4 rib waveguides with a focused ion beam

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    Focused ion beam milling is a processing technology which allows flexible direct writing of nanometer scale features efficiently substituting electron beam lithography. No mask need results in ability for patterns writing even on fragile micromechanical devices. In this work we studied the abilities of the tool for fabrication of diffraction grating couplers in silicon nitride waveguides. The gratings were fabricated on a chip with extra fragile cantilevers of sub micron thickness. Optical characterization of the couplers was done using excitation of the waveguides in visible range by focused Gaussian beams of different waist sizes. Influence of Ga+ implantation on the device performance was studied

    Acoplador de red de difracción, sistema y procedimiento

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    Fecha de solicitud: 29-Abril-2008.- Titular: Consejo Superior de Investigaciones Científicas (CSIC).-- 49 páginas, 13 figuras.Diffraction network coupler (100, 200, 300, 400) including an optical waveguide (101, 201, 301, 401) having a first surface (102, 202, 302, 402) and a second surface (103, 203, 303, 403) opposite the first surface (102, 202, 302, 402), in which the optical waveguide (101, 201, 301, 401) has a diffraction network (110, 210, 310, 410) on one of said surfaces. The coupler also includes a soft polymer film (120, 220, 320, 420) deposited on and attached to the optical waveguide (101, 201, 301, 401), whereby said soft polymer film (120, 220, 320, 420) partially surrounds the optical waveguide (101, 201, 301, 401), leaving one of the two surfaces thereof free, thereby enabling the diffraction network coupler (100, 200, 300, 400) to be mounted on, and temporarily adhered to, a specimen (230, 330, 430) by attaching the soft polymer film (120, 220, 320, 420) to the specimen (230, 330, 430).Acoplador de la red de la difracción (100, 200, 300, 400) incluyendo una guía de ondas óptica (101, 201, 301, 401) teniendo una primera superficie (102, 202, 302, 402) y una segunda superficie (103, 203, 303, 403) opuesta la primera superficie (102, 202, 302, 402), en la cual la guía de ondas óptica (101, 201, 301, 401) tiene una red de la difracción (110, 210, 310, 410) en una de las superficies dichas. El acoplador también incluye una película de polímero blanda (120, 220, 320, 420) depositada en y unido a la guía de ondas óptica (101, 201, 301, 401), por el que la película de polímero blanda dicha (120, 220, 320, 420) rodee parcialmente la guía de ondas óptica (101, 201, 301, 401), dejando de una de las dos superficies de eso libre, de tal modo posibilitando el acoplador de la red de la difracción (100, 200, 300, 400) que se montará encendido, y adherido temporalmente a, una muestra (230, 330, 430) uniendo la película de polímero blanda (120, 220, 320, 420) a la muestra (230, 330, 430).Peer reviewe

    Interferometre et capteur bases sur des guides d'ondes optiques bimodes et procede de detection

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    Fecha de solicitud: 18-07-2008.- Titular: Consejo Superior de Investigaciones Científicas (CSIC)The invention relates to a flat waveguide interferometer (15, 25, 35, 45) comprising: a substrate (8, 28, 38, 48); a bimodal waveguide (10, 20, 20', 30, 40) which, in turn, comprises at least one layer (1, 2, 3) deposited on said substrate (8, 28, 38, 48), said bimodal waveguide (10, 20, 20', 30, 40) being designed to support a zero-order transverse propagation mode and another, first-order transverse propagation mode, said transverse propagation modes having different dispersions; and a sensor plate (21, 31, 41, 51) arranged in a specific region of the upper part of the bimodal waveguide (10, 20, 20', 30, 40), said sensor plate (21, 31, 41, 51) being designed to receive a chemical, biological or physical stimulus that can change the effective refraction index of the bimodal wave guide (10, 20, 20', 30, 40). The bimodal waveguide (10, 20, 20', 30, 40) comprises means (9) for concentrating the light in the lateral direction and is therefore designed in such a way as to support a lateral mode. The invention also relates to a chip, a sensor and a detection method comprising a flat waveguide interferometer.La invención relaciona a comprender plano del interferómetro de la guía de ondas (15, 25, 35, 45): un sustrato (8, 28, 38, 48) una guía de ondas bimodal (10, 20, 20 ', 30, 40) que, alternadamente, comprende por lo menos una capa (1, 2, 3) depositada en el sustrato dicho (8, 28, 38, 48), el ser bimodal dicho de la guía de ondas (10, 20, 20 ', 30, 40) diseñado al soporte un modo transversal de la propagación de la cero-orden y otro, modo transversal de primer orden de la propagación, modos transversales dichos de la propagación que tienen diferentes dispersiones y una placa del sensor (21, 31, 41, 51) dispuesta en una región específica del parte superior de la guía de ondas bimodal (10, 20, 20 ', 30, 40), de ser dicho de la placa del sensor (21, 31, 41, 51) diseñado para recibir un estímulo del producto químico, biológico o físico que cambio del bote el índice eficaz de la refracción de la guía de ondas bimodal (10, 20, 20 ', 30, 40). La guía de ondas bimodal (10, 20, 20 ', 30, 40) comprende el medio (9) para concentrar la luz en la dirección lateral y es por lo tanto a fin de soporte diseñado al modo lateral. La invención también relaciona a un chip, a un sensor y a un método de detección comprendiendo un interferómetro plano de la guía de ondas.Peer reviewe

    Sensor de determinación directa de la presencia de detergentes en una muestra

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    La presente invención describe un nuevo sensor impedimétrico tridimensional en el que los electrodos interdigitados comprenden dígitos altamente conductivos que están separados por una barrera de un material aislante, útil para la determinación directa de la presencia de residuos de detergentes en agua en los procesos de lavado y ciclos de aclarado. El sensor cambia su impedancia cuando capta la presencia de moléculas de detergente en una muestra debido al cambio que sufre el campo eléctrico cuyas líneas de campo parten de un dígito (2) hasta llegar al otro dígito (3) sobrepasando la barrera aislante (4).Peer reviewedConsejo Superior de Investigaciones Científicas (España)A1 Solicitud de patente con informe sobre el estado de la técnic

    Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting.

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    The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination
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