Dynamics of a passive sliding particle on a randomly fluctuating surface

We study the motion of a particle sliding under the action of an external field on a stochastically fluctuating one-dimensional Edwards-Wilkinson surface. Numerical simulations using the single-step model shows that the mean-square displacement of the sliding particle shows distinct dynamic scaling behavior, depending on whether the surface fluctuates faster or slower than the motion of the particle. When the surface fluctuations occur on a time scale much smaller than the particle motion, we find that the characteristic length scale shows anomalous diffusion with $\xi(t)\sim t^{2\phi}$, where $\phi\approx 0.67$ from numerical data. On the other hand, when the particle moves faster than the surface, its dynamics is controlled by the surface fluctuations and $\xi(t)\sim t^{{1/2}}$. A self-consistent approximation predicts that the anomalous diffusion exponent is $\phi={2/3}$, in good agreement with simulation results. We also discuss the possibility of a slow cross-over towards asymptotic diffusive behavior. The probability distribution of the displacement has a Gaussian form in both the cases.Comment: 6 pages, 4 figures, error in reference corrected and new reference added, submitted to Phys. Rev.

Dephasing and Metal-Insulator Transition

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite phase coherence length, we show that by changing the phase coherence length or the localization length, it is possible to observe the transition from insulator-like behavior to metal-like behavior, and the transition is a crossover between the quantum and classical regimes. The resemblance between our calculated results and the experimental findings of 2D MIT suggests that the observed metallic phase could be the result of a finite dephasing rate.Comment: 10 figures, to be published in Phys. Rev. B63, Jan. 15, (2000

Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments

Interaction Corrections to Two-Dimensional Hole Transport in Large rsr_{s} Limit

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for r_{s}\agt22, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.Comment: 6 pages, 4 figure

Chiral condensates from tau decay: a critical reappraisal

The saturation of QCD chiral sum rules is reanalyzed in view of the new and complete analysis of the ALEPH experimental data on the difference between vector and axial-vector correlators (V-A). Ordinary finite energy sum rules (FESR) exhibit poor saturation up to energies below the tau-lepton mass. A remarkable improvement is achieved by introducing pinched, as well as minimizing polynomial integral kernels. Both methods are used to determine the dimension d=6 and d=8 vacuum condensates in the Operator Product Expansion, with the results: {O}_{6}=-(0.00226 \pm 0.00055) GeV^6, and O_8=-(0.0053 \pm 0.0033) GeV^8 from pinched FESR, and compatible values from the minimizing polynomial FESR. Some higher dimensional condensates are also determined, although we argue against extending the analysis beyond dimension d = 8. The value of the finite remainder of the (V-A) correlator at zero momentum is also redetermined: \Pi (0)= -4 \bar{L}_{10}=0.02579 \pm 0.00023. The stability and precision of the predictions are significantly improved compared to earlier calculations using the old ALEPH data. Finally, the role and limits of applicability of the Operator Product Expansion in this channel are clarified.Comment: Replaced versio

Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen

Partial Kekule Ordering of Adatoms on Graphene

Electronic and transport properties of Graphene, a one-atom thick crystalline material, are sensitive to the presence of atoms adsorbed on its surface. An ensemble of randomly positioned adatoms, each serving as a scattering center, leads to the Bolzmann-Drude diffusion of charge determining the resistivity of the material. An important question, however, is whether the distribution of adatoms is always genuinely random. In this Article we demonstrate that a dilute adatoms on graphene may have a tendency towards a spatially correlated state with a hidden Kekule mosaic order. This effect emerges from the interaction between the adatoms mediated by the Friedel oscillations of the electron density in graphene. The onset of the ordered state, as the system is cooled below the critical temperature, is accompanied by the opening of a gap in the electronic spectrum of the material, dramatically changing its transport properties

The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state

The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electron interactions and disorder in this so-called ``metallic'' regime. For temperatures well below the Fermi temperature, the data obey a scaling law where the disorder parameter ($k_{\rm{F}}l$), and not the concentration, appears explicitly. This suggests that interactions, although present, do not alter the Fermi-liquid properties of the system fundamentally. Furthermore, this experimental observation is reproduced in results of calculations based on temperature-dependent screening, in the context of Drude-Boltzmann theory.Comment: 5 pages, 6 figure

Compressibility of a two-dimensional hole gas in tilted magnetic field

We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level of the disorder potential is not sensitive to the parallel component of the magnetic field

Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface

In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system.Comment: (accepted to Phys. Rev. B