654 research outputs found
Dynamics of a passive sliding particle on a randomly fluctuating surface
We study the motion of a particle sliding under the action of an external
field on a stochastically fluctuating one-dimensional Edwards-Wilkinson
surface. Numerical simulations using the single-step model shows that the
mean-square displacement of the sliding particle shows distinct dynamic scaling
behavior, depending on whether the surface fluctuates faster or slower than the
motion of the particle. When the surface fluctuations occur on a time scale
much smaller than the particle motion, we find that the characteristic length
scale shows anomalous diffusion with , where from numerical data. On the other hand, when the particle moves faster
than the surface, its dynamics is controlled by the surface fluctuations and
. A self-consistent approximation predicts that the
anomalous diffusion exponent is , in good agreement with simulation
results. We also discuss the possibility of a slow cross-over towards
asymptotic diffusive behavior. The probability distribution of the displacement
has a Gaussian form in both the cases.Comment: 6 pages, 4 figures, error in reference corrected and new reference
added, submitted to Phys. Rev.
Dephasing and Metal-Insulator Transition
The metal-insulator transition (MIT) observed in two-dimensional (2D) systems
is apparently contradictory to the well known scaling theory of localization.
By investigating the conductance of disordered one-dimensional systems with a
finite phase coherence length, we show that by changing the phase coherence
length or the localization length, it is possible to observe the transition
from insulator-like behavior to metal-like behavior, and the transition is a
crossover between the quantum and classical regimes. The resemblance between
our calculated results and the experimental findings of 2D MIT suggests that
the observed metallic phase could be the result of a finite dephasing rate.Comment: 10 figures, to be published in Phys. Rev. B63, Jan. 15, (2000
Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system
We calculate the temperature dependent resistivity in spin-split subbands
induced by the inversion asymmetry of the confining potential in GaAs 2D hole
systems. By considering both temperature dependent multisubband screening of
impurity disorder and hole-hole scattering we find that the strength of the
metallic behavior depends on the symmetry of the confining potential (i.e.,
spin-splitting) over a large range of hole density. At low density above the
metal-insulator transition we find that effective disorder reduces the
enhancement of the metallic behavior induced by spin-splitting. Our theory is
in good qualitative agreement with existing experiments
Interaction Corrections to Two-Dimensional Hole Transport in Large Limit
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET
(Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high
mobility and large is found to have a linear dependence on temperature,
consistent with the theory of interaction corrections in the ballistic regime.
Phonon scattering contributions are negligible in the temperature range of our
interest, allowing comparison between our measured data and theory without any
phonon subtraction. The magnitude of the Fermi liquid interaction parameter
determined from the experiment, however, decreases with
increasing for r_{s}\agt22, a behavior unexpected from existing
theoretical calculations valid for small .Comment: 6 pages, 4 figure
Chiral condensates from tau decay: a critical reappraisal
The saturation of QCD chiral sum rules is reanalyzed in view of the new and
complete analysis of the ALEPH experimental data on the difference between
vector and axial-vector correlators (V-A). Ordinary finite energy sum rules
(FESR) exhibit poor saturation up to energies below the tau-lepton mass. A
remarkable improvement is achieved by introducing pinched, as well as
minimizing polynomial integral kernels. Both methods are used to determine the
dimension d=6 and d=8 vacuum condensates in the Operator Product Expansion,
with the results: {O}_{6}=-(0.00226 \pm 0.00055) GeV^6, and O_8=-(0.0053 \pm
0.0033) GeV^8 from pinched FESR, and compatible values from the minimizing
polynomial FESR. Some higher dimensional condensates are also determined,
although we argue against extending the analysis beyond dimension d = 8. The
value of the finite remainder of the (V-A) correlator at zero momentum is also
redetermined: \Pi (0)= -4 \bar{L}_{10}=0.02579 \pm 0.00023. The stability and
precision of the predictions are significantly improved compared to earlier
calculations using the old ALEPH data. Finally, the role and limits of
applicability of the Operator Product Expansion in this channel are clarified.Comment: Replaced versio
Metallicity and its low temperature behavior in dilute 2D carrier systems
We theoretically consider the temperature and density dependent transport
properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann
transport theory, taking into account realistic screened charged impurity
scattering in the semiconductor. We derive a leading behavior in the transport
property, which is exact in the strict 2D approximation and provides a zeroth
order explanation for the strength of metallicity in various 2D carrier
systems. By carefully comparing the calculated full nonlinear temperature
dependence of electronic resistivity at low temperatures with the corresponding
asymptotic analytic form obtained in the limit, both within the
RPA screened charged impurity scattering theory, we critically discuss the
applicability of the linear temperature dependent correction to the low
temperature resistivity in 2D semiconductor structures. We find quite generally
that for charged ionized impurity scattering screened by the electronic
dielectric function (within RPA or its suitable generalizations including local
field corrections), the resistivity obeys the asymptotic linear form only in
the extreme low temperature limit of . We point out the
experimental implications of our findings and discuss in the context of the
screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and
figures including a detailed comparison to a recent experimen
Partial Kekule Ordering of Adatoms on Graphene
Electronic and transport properties of Graphene, a one-atom thick crystalline
material, are sensitive to the presence of atoms adsorbed on its surface. An
ensemble of randomly positioned adatoms, each serving as a scattering center,
leads to the Bolzmann-Drude diffusion of charge determining the resistivity of
the material. An important question, however, is whether the distribution of
adatoms is always genuinely random. In this Article we demonstrate that a
dilute adatoms on graphene may have a tendency towards a spatially correlated
state with a hidden Kekule mosaic order. This effect emerges from the
interaction between the adatoms mediated by the Friedel oscillations of the
electron density in graphene. The onset of the ordered state, as the system is
cooled below the critical temperature, is accompanied by the opening of a gap
in the electronic spectrum of the material, dramatically changing its transport
properties
The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state
The effect of substrate bias and surface gate voltage on the low temperature
resistivity of a Si-MOSFET is studied for electron concentrations where the
resistivity increases with increasing temperature. This technique offers two
degrees of freedom for controlling the electron concentration and the device
mobility, thereby providing a means to evaluate the relative importance of
electron-electron interactions and disorder in this so-called ``metallic''
regime. For temperatures well below the Fermi temperature, the data obey a
scaling law where the disorder parameter (), and not the
concentration, appears explicitly. This suggests that interactions, although
present, do not alter the Fermi-liquid properties of the system fundamentally.
Furthermore, this experimental observation is reproduced in results of
calculations based on temperature-dependent screening, in the context of
Drude-Boltzmann theory.Comment: 5 pages, 6 figure
Compressibility of a two-dimensional hole gas in tilted magnetic field
We have measured compressibility of a two-dimensional hole gas in
p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a
tilted magnetic field. It turns out that the parallel component of magnetic
field affects neither the spin splitting nor the density of states. We conclude
that: (a) g-factor in the parallel magnetic field is nearly zero in this
system; and (b) the level of the disorder potential is not sensitive to the
parallel component of the magnetic field
Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface
In this work we have studied the parallel magnetoresistance of a 2DEG near a
vicinal silicon surface. An unusual, linear magnetoconductance is observed in
the fields up to T, which we explain by the effect of spin olarization
on impurity scattering. This linear magnetoresistance shows strong anomalies
near the boundaries of the minigap in the electron spectrum of the vicinal
system.Comment: (accepted to Phys. Rev. B
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