Electronic and thermoelectric properties of Fe2VAl: The role of defects and disorder

Using first-principles calculations, we show that Fe2VAl is an indirect band gap semiconductor. Our calculations reveal that its, sometimes assigned, semimetallic character is not an intrinsic property but originates from the antisite defects and site disorder, which introduce localized ingap and resonant states changing the electronic properties close to band gap. These states negatively affect the thermopower S and power factor PF=S^2\sigma, decreasing the good thermoelectric performance of intrinsic Fe2VAl.Comment: 4 pages, 6 figures, thermoelectric properties, electronic structure and transport properties, effect of antisite defects and disorder on electronic and transport propertie

Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States

Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures or the introduction of resonant states were suggested as possible solutions to this paradox but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly-directional character of some orbitals to engineer the band-structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principles calculations, the theoretical concept is demonstrated in Fe$_2$YZ Heusler compounds, yielding power factors 4-5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with a similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting or photovoltaic applications.Comment: 6 pages, 2 figure

First-principles modeling of the thermoelectric properties of SrTiO3_3/SrRuO3_3 superlattices

Using a combination of first-principles simulations, based on the density functional theory and Boltzmann's semiclassical theory, we have calculated the transport and thermoelectric properties of the half-metallic two dimensional electron gas confined in single SrRuO$_3$ layers of SrTiO$_3$/SrRuO$_3$ periodic superlattices. Close to the Fermi energy we find that the semiconducting majority spin channel displays a very large in-plane component of the Seebeck tensor at room temperature, $S$ = 1500 $\mu$V/K, and the minority spin channel shows good in-plane conductivity $\sigma$ = 2.5 (m$\Omega$cm)$^{-1}$. However, contrary to the expectation of Hicks and Dresselhaus model about enhanced global thermoelectric properties due to the confinement of the metallic electrons, we find that the total power factor and thermoelectric figure of merit for reduced doping is too small for practical applications. The reason for this failure can be traced back on the electronic structure of the interfacial gas, which departs from the free electron behaviour on which the model was based. The evolution of the electronic structure, electrical conductivity, Seebeck coefficient, and power factor as a function of the chemical potential is explained by a simplified tight-binding model. We find that the electron gas in our system is composed by a pair of one dimensional electron gases orthogonal to each other. This reflects the fact the physical dimensionality of the electronic system can be even smaller than that of the spacial confinement of the carriers.Comment: 9 pages, 7 figure

Highly-confined spin-polarized two-dimensional electron gas in SrTiO3_{3}/SrRuO3_{3} superlattices

We report first principles characterization of the structural and electronic properties of (SrTiO$_{3}$)$_{5}$/(SrRuO$_{3}$)$_{1}$ superlattices. We show that the system exhibits a spin-polarized two-dimensional electron gas, extremely confined to the 4$d$ orbitals of Ru in the SrRuO$_{3}$ layer. Every interface in the superlattice behaves as a minority-spin half-metal ferromagnet, with a magnetic moment of $\mu$ = 2.0 $\mu_{\rm B}$/SrRuO$_{3}$ unit. The shape of the electronic density of states, half metallicity and magnetism are explained in terms of a simplified tight-binding model, considering only the $t_{2g}$ orbitals plus (i) the bi-dimensionality of the system, and (ii) strong electron correlations.Comment: 5 pages, 4 figure

First-Principles Study of the Thermoelectric Properties of SrRuO3

peer reviewe

First-Principles Study of the Thermoelectric Properties of SrRuO₃

The Seebeck coefficient, thermoelectric power factor, electrical conductivity, and electronic thermal conductivity of the orthorhombic <i>Pbnm</i> phase of SrRuO₃ are studied comprehensively by combining first-principles density functional calculations and Boltzmann transport theory. The influence of exchange-correlation functional on the Seebeck coefficient is carefully investigated. We show that the best agreement with experimental data is achieved when SrRuO₃ is described as being at the limit of a half-metal. Furthermore, we analyze the role of individual symmetry-adapted atomic distortions on the Seebeck coefficient, highlighting a particularly strong sensitivity to R₄⁺ oxygen rotational motions, which may shed light on how to manipulate the Seebeck coefficient. We confirm that the power factor of SrRuO₃ can only be slightly improved by carrier doping. Our results provide a complete understanding of the thermoelectric properties of SrRuO₃ and an interesting insight on the relationship between exchange-correlation functionals, atomic motions, and thermoelectric quantities