Development of a measurement platformon a light airplane and analysis of airborne measurementsin the atmospheric boundary layer

In the present paper we provide an overview of a long term research project aimed at setting up a suitable platform for measurements in the atmospheric boundary layer on a light airplane along with some preliminary results obtained from fi eld campaigns at selected sites. Measurements of air pressure, temperature and relative humidity have been performed in various Alpine valleys up to a height of about 2500 m a.m.s.l. By means of GPS resources and specifi c post-processing procedures careful positioning of measurement points within the explored domain has been achieved. The analysis of collected data allowed detailed investigation of atmospheric vertical structures and dynamics typical of valley environment, such as morning transition from ground based inversion to fully developed well mixed convective boundary layer. Based on data collected along fl ights, 3D fi elds of the explored variables have been detected and identifi ed through application of geostatistical techniques (Kriging). The adopted procedures allowed evaluation of the intrinsic statistical structure of the spatial distribution of measured quantities and the estimate of the values of the same variable at unexplored locations by suitable weighted average of data recorded at close locations. Results thus obtained are presented and discussed

Pauli spin blockade in CMOS double quantum dot devices

Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.Comment: 5 pages , 4 figure

A Non-equilibrium STM model for Kondo Resonance on surface

Based on a no-equilibrium STM model, we study Kondo resonance on a surface by self-consistent calculations. The shapes of tunneling spectra are dependent on the energy range of tunneling electrons. Our results show that both energy-cutoff and energy-window of tunneling electrons have significant influence on the shapes of tunneling spectra. If no energy-cutoff is used, the Kondo resonances in tunneling spectrum are peaks with the same shapes in the density of state of absorbed magnetic atoms. This is just the prediction of Tersoff theory. If we use an energy cutoff to remove high-energy lectrons, a dip structure will modulate the Kondo resonance peak in the tunneling spectrum. The real shape of Kondo peak is the mixing of the peak and dip, the so-called Fano line shape. The method of self-consistent non-equilibrium matrix Green function is discussed in details.Comment: 11 pages and 8 eps figur

Orbital Kondo effect in carbon nanotubes

Progress in the fabrication of nanometer-scale electronic devices is opening new opportunities to uncover the deepest aspects of the Kondo effect, one of the paradigmatic phenomena in the physics of strongly correlated electrons. Artificial single-impurity Kondo systems have been realized in various nanostructures, including semiconductor quantum dots, carbon nanotubes and individual molecules. The Kondo effect is usually regarded as a spin-related phenomenon, namely the coherent exchange of the spin between a localized state and a Fermi sea of electrons. In principle, however, the role of the spin could be replaced by other degrees of freedom, such as an orbital quantum number. Here we demonstrate that the unique electronic structure of carbon nanotubes enables the observation of a purely orbital Kondo effect. We use a magnetic field to tune spin-polarized states into orbital degeneracy and conclude that the orbital quantum number is conserved during tunneling. When orbital and spin degeneracies are simultaneously present, we observe a strongly enhanced Kondo effect, with a multiple splitting of the Kondo resonance at finite field and predicted to obey a so-called SU(4) symmetry.Comment: 26 pages, including 4+2 figure

Singlet-triplet transition in a single-electron transistor at zero magnetic field

We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak at zero bias. For even numbers of electrons we generally observe Kondo-like features corresponding to excited states. For the latter, the excitation energy often decreases with gate voltage until a new zero-bias Kondo peak results. We ascribe this behavior to a singlet-triplet transition in zero magnetic field driven by the change of shape of the potential that confines the electrons in the SET.Comment: 4 p., 4 fig., 5 new ref. Rewrote 1st paragr. on p. 4. Revised author list. More detailed fit results on page 3. A plotting error in the horizontal axis of Fig. 1b and 3 was corrected, and so were the numbers in the text read from those fig. Fig. 4 was modified with a better temperature calibration (changes are a few percent). The inset of this fig. was removed as it is unnecessary here. Added remarks in the conclusion. Typos are correcte

A CMOS silicon spin qubit

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.Comment: 12 pages, 4 figure

Andreev-Tunneling, Coulomb Blockade, and Resonant Transport of Non-Local Spin-Entangled Electrons

We propose and analyze a spin-entangler for electrons based on an s-wave superconductor coupled to two quantum dots each of which is tunnel-coupled to normal Fermi leads. We show that in the presence of a voltage bias and in the Coulomb blockade regime two correlated electrons provided by the Andreev process can coherently tunnel from the superconductor via different dots into different leads. The spin-singlet coming from the Cooper pair remains preserved in this process, and the setup provides a source of mobile and nonlocal spin-entangled electrons. The transport current is calculated and shown to be dominated by a two-particle Breit-Wigner resonance which allows the injection of two spin-entangled electrons into different leads at exactly the same orbital energy, which is a crucial requirement for the detection of spin entanglement via noise measurements. The coherent tunneling of both electrons into the same lead is suppressed by the on-site Coulomb repulsion and/or the superconducting gap, while the tunneling into different leads is suppressed through the initial separation of the tunneling electrons. In the regime of interest the particle-hole excitations of the leads are shown to be negligible. The Aharonov-Bohm oscillations in the current are shown to contain single- and two-electron periods with amplitudes that both vanish with increasing Coulomb repulsion albeit differently fast.Comment: 11 double-column pages, 2 figures, REVTeX, minor revision

Electron Cotunneling in a Semiconductor Quantum Dot

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.Comment: To be published in Phys. Rev. Let

Nonequilibrium stabilization of charge states in double quantum dots

We analyze the decoherence of charge states in double quantum dots due to cotunneling. The system is treated using the Bloch-Redfield generalized master equation for the Schrieffer-Wolff transformed Hamiltonian. We show that the decoherence, characterized through a relaxation $\tau_{r}$ and a dephasing time $\tau_{\phi}$, can be controlled through the external voltage and that the optimum point, where these times are maximum, is not necessarily in equilibrium. We outline the mechanism of this nonequilibrium-induced enhancement of lifetime and coherence. We discuss the relevance of our results for recent charge qubit experiments.Comment: 5 pages, 5 figure