Silicon quantum dots are attractive candidates for the development of
scalable, spin-based qubits. Pauli spin blockade in double quantum dots
provides an efficient, temperature independent mechanism for qubit readout.
Here we report on transport experiments in double gate nanowire transistors
issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low
temperature the devices behave as two few-electron quantum dots in series. We
observe signatures of Pauli spin blockade with a singlet-triplet splitting
ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that
transitions which conserve spin are shown to be magnetic-field independent up
to B = 6 T.Comment: 5 pages , 4 figure
