Commutators on ℓ1\ell_1

The main result is that the commutators on $\ell_1$ are the operators not of the form $\lambda I + K$ with $\lambda\neq 0$ and $K$ compact. We generalize Apostol's technique (1972, Rev. Roum. Math. Appl. 17, 1513 - 1534) to obtain this result and use this generalization to obtain partial results about the commutators on spaces \X which can be represented as \displaystyle \X\simeq (\bigoplus_{i=0}^{\infty} \X)_{p} for some $1\leq p<\infty$ or $p=0$. In particular, it is shown that every compact operator on $L_1$ is a commutator. A characterization of the commutators on $\ell_{p_1}\oplus\ell_{p_2}\oplus...\oplus\ell_{p_n}$ is given. We also show that strictly singular operators on $\ell_{\infty}$ are commutators.Comment: 17 pages. Submitted to the Journal of Functional Analysi

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented

Thin Film Transistors obtained by Hot-Wire CVD

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material

Facile Synthesis of Amine-Functionalized Eu3+-Doped La(OH)3 Nanophosphors for Bioimaging

Here, we report a straightforward synthesis process to produce colloidal Eu3+-activated nanophosphors (NPs) for use as bioimaging probes. In this procedure, poly(ethylene glycol) serves as a high-boiling point solvent allowing for nanoscale particle formation as well as a convenient medium for solvent exchange and subsequent surface modification. The La(OH)3:Eu3+ NPs produced by this process were ~3.5 nm in diameter as determined by transmission electron microscopy. The NP surface was coated with aminopropyltriethoxysilane to provide chemical functionality for attachment of biological ligands, improve chemical stability and prevent surface quenching of luminescent centers. Photoluminescence spectroscopy of the NPs displayed emission peaks at 597 and 615 nm (λex = 280 nm). The red emission, due to 5D0 → 7F1 and 5D0 → 7F2 transitions, was linear with concentration as observed by imaging with a conventional bioimaging system. To demonstrate the feasibility of these NPs to serve as optical probes in biological applications, an in vitro experiment was performed with HeLa cells. NP emission was observed in the cells by fluorescence microscopy. In addition, the NPs displayed no cytotoxicity over the course of a 48-h MTT cell viability assay. These results suggest that La(OH)3:Eu3+ NPs possess the potential to serve as a luminescent bioimaging probe

Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition

The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in nanocrystalline silicon deposited at 125 °C by Hot-Wire Chemical Vapour Deposition. The dependence of the subthreshold activation energy on gate bias for different gate bias stresses is quite different from the one reported for hydrogenated amorphous silicon. This behaviour has been related to trapped charge in the active layer of the thin film transistor

Nanoencapsulation of luminescent 3-hydroxypicolinate lanthanide complexes

We have synthesized luminescent nanoparticles comprising a core of lanthanide complexes and shells of amorphous silica using reverse micelles as nanoreactors. 3-Hydroxypicolinate complexes of Eu(III), Tb(III), and the corresponding heteronuclear complexes have been investigated as the photoactive cores. The size of the silica particles is within the nanometer scale, which, together with the ability for surface biofunctionalization, opens up perspectives for their use in bioapplications. Optical studies of the as-prepared nanoparticles reveal that the luminescence properties of the 3-hydroxypicolinate complexes in the matrices are markedly different from their original features

Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition

The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in nanocrystalline silicon deposited at 125°C by Hot-Wire Chemical Vapour Deposition. The dependence of the subthreshold activation energy on gate bias for different gate bias stresses is quite different from the one reported for hydrogenated amorphous silicon. This behaviour has been related to trapped charge in the active layer of the thin film transistor.Peer ReviewedPostprint (published version