All-Electrical Quantum Computation with Mobile Spin Qubits

We describe and discuss a solid state proposal for quantum computation with mobile spin qubits in one-dimensional systems, based on recent advances in spintronics. Static electric fields are used to implement a universal set of quantum gates, via the spin-orbit and exchange couplings. Initialization and measurement can be performed either by spin injection from/to ferromagnets, or by using spin filters and mesoscopic spin polarizing beam-splitters. The vulnerability of this proposal to various sources of error is estimated by numerical simulations. We also assess the suitability of various materials currently used in nanotechnology for an actual implementation of our model.Comment: 10 pages, 6 figs, RevTeX

Junctionless 6T SRAM cell

The design of a 6T SRAM cell with 20 nm junctionless (JL) MOSFETs is reported. It is shown that a 6T SRAM cell designed with JL MOSFETs achieves a high static noise margin (SNM) of 185 mV, retention noise or hold margin (RNM) of 381 mV and writability current (IWR) of 33 µA along with a low leakage current (ILEAK) of 2 pA at a supply voltage (VDD) of 0.9 V for cell and pull-up ratios of 1. Results offer a new opportunity to design future SRAM cells with nanoscale JL MOSFETs.<br/

A nanomechanical resonator shuttling single electrons at radio frequencies

We observe transport of electrons through a metallic island on the tip of a nanomechanical pendulum. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum. We report on measurements covering the temperature range from 300 K down to 4.2 K. We explain the I-V curve, which differs from previous theoretical predictions, with model calculations based on a Master equation approach.Comment: 5 pages, 4 jpeg-figure

The curious case of thin-body Ge crystallization

The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably (111) stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 degrees C rapid-thermal-anneal, Ge structures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3643160

Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions

Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET

In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gated junctionless MOSFET, enabling modification of the nanowire's potential well profile. In the presence of light, photogenerated electrons accumulate at the center of the junctionless nanowire, aligning with the modified potential well profile influenced by gate bias. These carriers at the center are far from interfaces and experience less interfacial noise. Therefore, such clean photo-doping shows clear, repeatable peaks in current for specific gate biases compared to the dark condition, considering different operating drain-to-source voltages at room temperature. We propose that photodoping-induced subband occupation of gate tunable potential well of the nanowire is the underlying phenomenon responsible for this kind of observation. This study reveals experimental findings demonstrating gate-induced switching from semi-classical to the quantum domain, followed by the optical occupancy of electronic sub-bands at room temperature. We developed a compact model based on the Nonequilibrium Green's function formalism to understand this phenomenon in our illuminated device better. This work reveals the survival of the quantum confinement effect at room temperature in such semi-classical transport.Comment: 12 pages, 6 figure

Systems-pharmacology dissection of a drug synergy in imatinib-resistant CML

Occurrence of the BCR-ABL[superscript T315I] gatekeeper mutation is among the most pressing challenges in the therapy of chronic myeloid leukemia (CML). Several BCR-ABL inhibitors have multiple targets and pleiotropic effects that could be exploited for their synergistic potential. Testing combinations of such kinase inhibitors identified a strong synergy between danusertib and bosutinib that exclusively affected CML cells harboring BCR-ABL[superscript T315I]. To elucidate the underlying mechanisms, we applied a systems-level approach comprising phosphoproteomics, transcriptomics and chemical proteomics. Data integration revealed that both compounds targeted Mapk pathways downstream of BCR-ABL, resulting in impaired activity of c-Myc. Using pharmacological validation, we assessed that the relative contributions of danusertib and bosutinib could be mimicked individually by Mapk inhibitors and collectively by downregulation of c-Myc through Brd4 inhibition. Thus, integration of genome- and proteome-wide technologies enabled the elucidation of the mechanism by which a new drug synergy targets the dependency of BCR-ABL[superscript T315I] CML cells on c-Myc through nonobvious off targets

Biallelic loss-of-function mutation in NIK causes a primary immunodeficiency with multifaceted aberrant lymphoid immunity

Primary immunodeficiency disorders enable identification of genes with crucial roles in the human immune system. Here we study patients suffering from recurrent bacterial, viral and Cryptosporidium infections, and identify a biallelic mutation in the MAP3K14 gene encoding NIK (NF- B-inducing kinase). Loss of kinase activity of mutant NIK, predicted by in silico analysis and confirmed by functional assays, leads to defective activation of both canonical and non-canonical NF- B signalling. Patients with mutated NIK exhibit B-cell lymphopenia, decreased frequencies of class-switched memory B cells and hypogammaglobulinemia due to impaired B-cell survival, and impaired ICOSL expression. Although overall T-cell numbers are normal, both follicular helper and memory T cells are perturbed. Natural killer (NK) cells are decreased and exhibit defective activation, leading to impaired formation of NK-cell immunological synapses. Collectively, our data illustrate the non-redundant role for NIK in human immune responses, demonstrating that loss-of-function mutations in NIK can cause multiple aberrations of lymphoid immunity