Hybrid superconducting nanostructures: very low temperature local probing and noise

International audienceWe review the topic of hybrid superconducting nanostructures by introducing the basic physical concepts and describing recent key experimental results. We discuss the superconductivity nucleation in mesoscopic structures, the vortex lattice imaging in doped diamond films, the superconducting proximity effect, multiple Andreev reflection in Josephson junctions and the electronic micro-cooling in hybrid tunnel junctions. An emphasis is put on very low temperature local probes and noise measurement techniques developed in Grenoble

Electric field-controlled rippling of graphene

International audienceMetal-graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of graphene is much less studied. Here we show that graphene near a metallic interface can exhibit a set of ripples self-organized into domains whose topographic roughness is controlled by the tip bias of a scanning tunneling microscope. The reconstruction from topographic images of graphene bending energy maps sheds light on the local electro-mechanical response of graphene under STM imaging and unveils the role of the stress induced by the vicinity of the graphene-metal interface in the formation and the manipulation of these ripples. Since microscopic rippling is one of the important factors that limit charge carrier mobility in graphene, the control of rippling with a gate voltage may have important consequences in the conductance of graphene devices where transverse electric fields are created by contactless suspended gate electrodes. This opens up also the possibility to dynamically control the local morphology of graphene nanomembranes

Universal classification of twisted, strained and sheared graphene moir\'e superlattices

Moir\'e superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene's electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated. In this scanning tunneling microscopy and density functional theory study, we have analysed graphene samples grown on multilayer graphene prepared onto SiC and on the close-packed surfaces of Re and Ir with ultra-high precision. We resolve small-angle twists and shears in graphene, and identify large unit cells comprising more than 1,000 carbon atoms and exhibiting non-trivial nanopatterns for moir\'e superlattices, which are commensurate to the graphene lattice. Finally, a general formalism applicable to any hexagonal moir\'e is presented to classify all reported structures.Comment: 14 pages, 6 figure

Superconducting group-IV semiconductors

International audienceWe present recent achievements and predictions in the field of doping-induced superconductivity in column IV-based covalent semiconductors, with a focus on Bdoped diamond and silicon. Despite the amount of experimental and theoretical work produced over the last four years, many open questions and puzzling results remain to be clarified. The nature of the coupling (electronic correlation and/or phonon-mediated), the relationship between the doping concentration and the critical temperature (TC), which determines the prospects for higher transition temperatures, as well as the influence of disorder and dopant homogeneity, are debated issues that will determine the future of the field. We suggest that innovative superconducting devices, combining specific properties of diamond or silicon, and the maturity of semiconductor-based technologies, will soon be developed

Metal-to-insulator transition and superconductivity in boron-doped diamond

International audienceThe experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon

Low-temperature transport in highly boron-doped nanocrystalline diamond

International audienceWe studied the transport properties of highly boron-doped nanocrystalline diamond thin films at temperatures down to 50 mK. The system undergoes a doping-induced metal-insulator transition with an interplay between intergranular conductance g and intragranular conductance g0, as expected for a granular system. The conduction mechanism in the case of the low-conductivity films close to the metal-insulator transition has a temperature dependence similar to Efros-Shklovskii type of hopping. On the metallic side of the transition, in the normal state, a logarithmic temperature dependence of the conductivity is observed, as expected for a metallic granular system. Metallic samples far away from the transition show similarities to heavily borondoped single-crystal diamond. Close to the transition, the behavior is richer. Global phase coherence leads in both cases to superconductivity also checked by ac susceptibility , but a peak in the low-temperature magnetoresistance measurements occurs for samples close to the transition. Corrections to the conductance according to superconducting fluctuations account for this negative magnetoresistance

Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition

Perturbations of the two dimensional carbon lattice of graphene, such as grain boundaries, have significant influence on the charge transport and mechanical properties of this material. Scanning tunneling microscopy measurements presented here show that localized states near the Dirac point dominate the local density of states of grain boundaries in graphene grown by chemical vapor deposition. Such low energy states are not reproduced by theoretical models which treat the grain boundaries as periodic dislocation-cores composed of pentagonal-heptagonal carbon rings. Using ab initio calculations, we have extended this model to include disorder, by introducing vacancies into a grain boundary consisting of periodic dislocation-cores. Within the framework of this model we were able to reproduce the measured density of states features. We present evidence that grain boundaries in graphene grown on copper incorporate a significant amount of disorder in the form of two-coordinated carbon atoms. © 2013 Elsevier Ltd. All rights reserved

Localization of preformed Cooper pairs in disordered superconductors

International audienceThe most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a superconductor then, at low temperatures, disorder can induce a pronounced transition from a superconducting into an insulating state. An outstanding question is whether the route to insulating behaviour proceeds through the direct localization of Cooper pairs or, alternatively, by a two-step process in which the Cooper pairing is first destroyed followed by the standard localization of single electrons. Here we address this question by studying the local superconducting gap of a highly disordered amorphous superconductor by means of scanning tunnelling spectroscopy. Our measurements reveal that, in the vicinity of the superconductor-insulator transition, the coherence peaks in the one-particle density of states disappear whereas the superconducting gap remains intact, indicating the presence of localized Cooper pairs. Our results provide the first direct evidence that the superconductor-insulator transition in some homogeneously disordered materials is driven by Cooper-pair localization