Lunar sample analysis

The surface composition of two samples from the highly shocked, glass-coated lunar basalt (12054) and from four glass-coated fragments from the 1-2 mm (14161) fines were examined by X-ray photoemission spectroscopy to determine whether the agglutination process itself is responsible for the difference between their surface and bulk compositions. Auger electron spectroscopy of glass balls from the 15425 and 74001 fines were analyzed to understand the nature, extent, and behavior of volatile phases associated with lunar volcanism. Initial results indicate that (1) volatiles, in the outer few atomic layers sampled, vary considerably from ball to ball; (2) variability over the surface of individual balls is smaller; (3) the dominant volatiles on the balls are S and Zn; and (4) other volatiles commonly observed are P, Cl, and K

Lunar sample analysis

Results are presented from an extensive series of new high resolution scanning electron microscope studies of the very primative group of meteorites known as unequilibrated chondrites. These include quantitative analyses of micrometer sized phases and interpretation in terms of relevant phase equilibria. Several new meteorite minerals including high chromium metal, have been discovered

Optical Study of GaAs quantum dots embedded into AlGaAs nanowires

We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires.Comment: 5 page, 5 figure

Super-resolution provided by the arbitrarily strong superlinearity of the blackbody radiation

Blackbody radiation is a fundamental phenomenon in nature, and its explanation by Planck marks a cornerstone in the history of Physics. In this theoretical work, we show that the spectral radiance given by Planck's law is strongly superlinear with temperature, with an arbitrarily large local exponent for decreasing wavelengths. From that scaling analysis, we propose a new concept of super-resolved detection and imaging: if a focused beam of energy is scanned over an object that absorbs and linearly converts that energy into heat, a highly nonlinear thermal radiation response is generated, and its point spread function can be made arbitrarily smaller than the excitation beam focus. Based on a few practical scenarios, we propose to extend the notion of super-resolution beyond its current niche in microscopy to various kinds of excitation beams, a wide range of spatial scales, and a broader diversity of target objects

Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires

Picosecond acoustic pulses, generated in a thin aluminum transducer, are injected into semiconductor vertical transport devices consisting of core-shell GaAsP nanowires. The acoustic pulses induce current pulses in the device with amplitude ∼1 μA. The spectrum of the electrical response is sensitive to the elastic properties of the device and has a frequency cutoff at ∼10 GHz. This work shows the potential of the technique for studies the elastic properties of complex semiconductor nanodevices.Peer reviewe

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550°C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm

Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si

Abstract Rutherford backscattering spectroscopy (RBS) and secondary-ion mass spectroscopy (SIMS) were combined to achieve depth profiling calibrated in absolute atomic concentrations. This method was applied to InAs nanocrystals, grown by molecular beam epitaxy (MBE), buried in a Si matrix. By means of RBS, with its capability of accessing the buried layers, we determined the depth-integrated areal densities of As and In. These were used to calibrate the SIMS profiles with their high depth resolution and dynamic range in absolute atomic concentrations. This allowed us to identify, besides a well confined layer of stoichiometric InAs nanocrystals, significant diffusion of In and As into the Si matrix in despite of their larger atomic radii, and an excess of As due to its non-reactive deposition on Si from the excess As 4 flux during the MBE growth. On the basis of these findings, we suggest measures to optimize the MBE process for InAs/Si and similar systems