Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions

We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without} a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence.Comment: 4 pages, 5 figure

Inducing and Optimizing Magnetism in Graphene Nanomesh

Using first-principles calculations, we explore the electronic and magnetic properties of graphene nanomesh (GNM), a regular network of large vacancies, produced either by lithography or nanoimprint. When removing an equal number of A and B sites of the graphene bipartite lattice, the nanomesh made mostly of zigzag (armchair) type edges exhibit antiferromagnetic (spin unpolarized) states. In contrast, in situation of sublattice symmetry breaking, stable ferri(o)magnetic states are obtained. For hydrogen-passivated nanomesh, the formation energy is dramatically decreased, and ground state is found to strongly depend on the vacancies shape and size. For triangular shaped holes, the obtained net magnetic moments increase with the number difference of removed A and B sites in agreement with Lieb's theorem for even A+B. For odd A+B triangular meshes and all cases of non-triangular nanomeshes including the one with even A+B, Lieb's theorem does not hold anymore which can be partially attributed to introduction of armchair edges. In addition, large triangular shaped GNM could be as robust as non-triangular GNMs, providing possible solution to overcome one of crucial challenges for the sp-magnetism. Finally, significant exchange splitting values as large as $\sim 0.5$ eV can be obtained for highly asymmetric structures evidencing the potential of GNM for room temperature carbon based spintronics. These results demonstrate that a turn from 0-dimensional graphene nanoflakes throughout 1-dimensional graphene nanoribbons with zigzag edges to GNM breaks localization of unpaired electrons and provides deviation from the rules based on Lieb's theorem. Such delocalization of the electrons leads the switch of the ground state of system from antiferromagnetic narrow gap insulator discussed for graphene nanoribons to ferromagnetic or nonmagnetic metal.Comment: 7 pages, 5 figures, 1 tabl

Band edge noise spectroscopy of a magnetic tunnel junction

We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these noise anomalies with the magnetic state allows evaluating the degree of spin mixing between the spin polarized bands at the ferromagnet/insulator interface. Our results are in qualitative agreement with numerical calculations

Anatomy and giant enhancement of the perpendicular magnetic anisotropy of cobalt-graphene heterostructures

We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~\AA. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose super-exchange stabilized Co-graphene heterostructures with a robust out-of-plane constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point towards possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20 times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.Comment: 17 pages, 4 figure

Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces

The Dzyaloshinskii-Moriya Interaction (DMI) between spins is induced by spin-orbit coupling in magnetic materials lacking inversion symmetry. DMI is recognized to play a crucial role at the interface between ferromagnetic (FM) and heavy nonmagnetic (NM) metals to create topological textures called magnetic skyrmions which are very attractive for ultra-dense information storage and spintronic devices. DMI also plays an essential role for fast domain wall (DW) dynamics driven by spin-orbit torques. Here, we present first principles calculations which clarify the main features and microscopic mechanisms of DMI in Co/Pt bilayers. DMI is found to be predominantly located at the interfacial Co layer, originating from spin-orbit energy provided by the adjacent NM layer. Furthermore, no direct correlation is found between DMI and proximity induced magnetism in Pt. These results clarify underlying mechanisms of DMI at FM/NM bilayers and should help optimizing material combinations for skyrmion- and DW-based storage and memory devices.Comment: 16 pages, 4 figure

Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies

The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation transition from the in-plane to the perpendicular (out of plane) state at temperatures below 50 K. The samples were 10 nm thick Fe in MgO/Fe(100)/MgO as stacking components of V/MgO/Fe/MgO/Fe/Co double barrier MTJs with an area of 20 × 20 μm2. Micromagnetic simulations with PMA and different second order anisotropies at the opposite Fe/MgO interfaces qualitatively reproduce the observed broken symmetry spin reorientation transition. Our findings open the possibilities to develop multistate epitaxial spintronics based on competing magnetic anisotropies.This work has been supported in part by Spanish MINECO (MAT2015-66000-P, EUIN2017-87474), SPINORBIT (MDM-2014-0377) and Comunidad de Madrid (NANOFRONTMAG-CM S2013/MIT-2850). C.T. acknowledges “EMERSPIN” grant ID PN-III-P4-ID-PCE-2016-0143, No. UEFISCDI:22/12.07.201

Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces

The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding temperature dependence of magnetic anisotropy becomes crucial. In this work, we theoretically address the correlation between temperature dependence of PMA and magnetization in typical Fe/MgO-based structures. In particular, the possible mechanisms behind experimentally reported deviations from the Callen and Callen scaling power law are analyzed. First-principles calculations reveal small high-order anisotropy terms ruling out an intrinsic microscopic mechanism underlying those deviations. Neglecting higher-order anisotropy terms in the atomisitic spin Hamiltonian, two possible extrinsic macroscopic mechanisms are unveiled: influence of the dead layer, always present in storage layer of STT-MRAM cells, and spatial inhomogeneities of interfacial magnetic anisotropy. We show that presence of a dead layer simultaneously with scaling the anisotropy constant by the total magnetization of the sample rather than that of the interface itself lead to low scaling powers. In the second mechanism, increasing the percentage of inhomogeneity in the interfacial PMA is revealed to decrease the scaling power. Apart from those different mechanisms, the layer-resolved temperature-dependence of PMA is shown to ideally follow the Callen and Callen scaling power law for each individual Fe layer. These results allow coherently explaining the difference in scaling powers relating anisotropy and magnetization thermal variations reported in earlier experiments. This is crucial for the understanding of the thermal stability of the storage layer magnetization in STT-MRAM applications.Comment: 9 pages, 8 figure

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

In a ferromagnetic heterostructure, the interplay between a Rashba spin-orbit coupling and an exchange field gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression {\bm T}=T^y_{\para}(\theta){\bm m}\times(\hat{\bm y}\times{\bm m})+T^y_{\bot}(\theta)\hat{\bm y}\times{\bm m}+T^z_{\para}(\theta){\bm m}\times(\hat{\bm z}\times{\bm m})+T^z_{\bot}(\theta)\hat{\bm z}\times{\bm m}, where the coefficients T_{\para,\bot}^{y,z} depend on the magnetization direction. Our results agree with recent experiments.Comment: 4 pages, 4 figue