The perpendicular magnetic anisotropy (PMA) at magnetic transition
metal/oxide interfaces is a key element in building out-of-plane magnetized
magnetic tunnel junctions for spin-transfer-torque magnetic random access
memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive
to thermal effects. Thus, understanding temperature dependence of magnetic
anisotropy becomes crucial. In this work, we theoretically address the
correlation between temperature dependence of PMA and magnetization in typical
Fe/MgO-based structures. In particular, the possible mechanisms behind
experimentally reported deviations from the Callen and Callen scaling power law
are analyzed. First-principles calculations reveal small high-order anisotropy
terms ruling out an intrinsic microscopic mechanism underlying those
deviations. Neglecting higher-order anisotropy terms in the atomisitic spin
Hamiltonian, two possible extrinsic macroscopic mechanisms are unveiled:
influence of the dead layer, always present in storage layer of STT-MRAM cells,
and spatial inhomogeneities of interfacial magnetic anisotropy. We show that
presence of a dead layer simultaneously with scaling the anisotropy constant by
the total magnetization of the sample rather than that of the interface itself
lead to low scaling powers. In the second mechanism, increasing the percentage
of inhomogeneity in the interfacial PMA is revealed to decrease the scaling
power. Apart from those different mechanisms, the layer-resolved
temperature-dependence of PMA is shown to ideally follow the Callen and Callen
scaling power law for each individual Fe layer. These results allow coherently
explaining the difference in scaling powers relating anisotropy and
magnetization thermal variations reported in earlier experiments. This is
crucial for the understanding of the thermal stability of the storage layer
magnetization in STT-MRAM applications.Comment: 9 pages, 8 figure