Predicting Residential Satisfaction: A Comparative Case Study

This is a comparative case study that focuses on resident satisfaction in three buildings renovated for housing. A survey based on environment-behavior factors that can contribute to resident satisfaction was developed and distributed to the buildings\u27 residents. Residents in fifty-two percent (52.5%) of the units in the three buildings responded (N = 64). Index variables used were: management, perception, wayfinding, safety. comfort. and adequacy. There was a significant relationship between resident satisfaction and age for one building. Safety and perception were significant for all buildings. Safety, perception and comfort were significant in different ways for each of the three buildings

Tumor growth instability and the onset of invasion

Motivated by experimental observations, we develop a mathematical model of chemotactically directed tumor growth. We present an analytical study of the model as well as a numerical one. The mathematical analysis shows that: (i) tumor cell proliferation by itself cannot generate the invasive branching behaviour observed experimentally, (ii) heterotype chemotaxis provides an instability mechanism that leads to the onset of tumor invasion and (iii) homotype chemotaxis does not provide such an instability mechanism but enhances the mean speed of the tumor surface. The numerical results not only support the assumptions needed to perform the mathematical analysis but they also provide evidence of (i), (ii) and (iii). Finally, both the analytical study and the numerical work agree with the experimental phenomena.Comment: 12 pages, 8 figures, revtex

Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs with nominal doping level p=7×1018cm−3p=7×1018cm−3. The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450°C450°C, or after ion implantations carried out at energies of 40keV40keV with P+P+, and at 90 and 170keV170keV with As+As+. These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from AsAs desorption is clearly observed in samples submitted to RVTA above 300°C300°C, and the depletion layer depths measured in ion implanted GaAs:ZnGaAs:Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45°45° during implantation, are also investigated. These results show that the Raman spectroscopy is a versatile tool to study the defects induced by postgrowth processes in multilayered heterostructures, with probing range of about 100nm100nm in GaAsGaAs-based materials

Continuous measurements of greenhouse gases and atmospheric oxygen at the Namib Desert atmospheric observatory

A new coastal background site has been established for observations of greenhouse gases (GHGs) in the central Namib Desert at Gobabeb, Namibia. The location of the site was chosen to provide observations for a data-poor region in the global sampling network for GHGs. Semi-automated continuous measurements of carbon dioxide, methane, nitrous oxide, carbon monoxide, atmospheric oxygen, and basic meteorology are made at a height of 21 m a.g.l., 50 km from the coast at the northern border of the Namib Sand Sea. Atmospheric oxygen is measured with a differential fuel cell analyzer (DFCA). Carbon dioxide and methane are measured with an early-model cavity ring-down spectrometer (CRDS); nitrous oxide and carbon monoxide are measured with an off-axis integrated cavity output spectrometer (OA-ICOS). Instrument-specific water corrections are employed for both the CRDS and OA-ICOS instruments in lieu of drying. The performance and measurement uncertainties are discussed in detail. As the station is located in a remote desert environment, there are some particular challenges, namely fine dust, high diurnal temperature variability, and minimal infrastructure. The gas handling system and calibration scheme were tailored to best fit the conditions of the site. The CRDS and DFCA provide data of acceptable quality when base requirements for operation are met, specifically adequate temperature control in the laboratory and regular supply of electricity. In the case of the OA-ICOS instrument, performance is significantly improved through the implementation of a drift correction through frequent measurements of a reference cylinder

Lifetime of 19Ne*(4.03 MeV)

The Doppler-shift attenuation method was applied to measure the lifetime of the 4.03 MeV state in 19Ne. Utilizing a 3He-implanted Au foil as a target, the state was populated using the 20Ne(3He,alpha)19Ne reaction in inverse kinematics at a 20Ne beam energy of 34 MeV. De-excitation gamma rays were detected in coincidence with alpha particles. At the 1 sigma level, the lifetime was determined to be 11 +4, -3 fs and at the 95.45% confidence level the lifetime is 11 +8, -7 fs.Comment: 6 pages, submitted to Phys. Rev.

Effect of High-Dose Simvastatin on Cerebral Blood Flow and Static Autoregulation in Subarachnoid Hemorrhage

Statins may promote vasodilation following subarachnoid hemorrhage (SAH) and improve the response to blood pressure elevation. We sought to determine whether simvastatin increases cerebral blood flow (CBF) and alters the response to induced hypertension after SAH

Lifetimes of states in 19Ne above the 15 O + alpha breakup threshold

The 15O(alpha,gamma)19Ne reaction plays a role in the ignition of Type I x-ray bursts on accreting neutron stars. The lifetimes of states in 19Ne above the 15O + alpha threshold of 3.53 MeV are important inputs to calculations of the astrophysical reaction rate. These levels in 19Ne were populated in the 3He(20Ne,alpha)19Ne reaction at a 20Ne beam energy of 34 MeV. The lifetimes of six states above the threshold were measured with the Doppler shift attenuation method (DSAM). The present measurements agree with previous determinations of the lifetimes of these states and in some cases are considerably more precise

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (1015 cm−2). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related to damage accumulation and recovery mechanisms, have important implications for the realization ion-implanted resistive layers that can be triggered with near infrared laser pulses and suitable for ultrafast optoelectronics

Recurrent adult-onset hypophyseal Langerhans cell histiocytosis after radiotherapy: A case report

INTRODUCTION: Langerhans cell histiocytosis is a rare disease within the adult population, with very few cases reported as solitary hypophyseal lesions in adults. Of the reported cases, most have been treated successfully with surgery, radiotherapy, and/or chemotherapy. Radiotherapy has been thought to be curative at the relatively low dose of 20Gy. Here we report a case of recurrent hypophyseal Langerhans cell histiocytosis 9 months after radiotherapy with an interval period of symptomatic and radiographic response to therapy. CASE PRESENTATION: A 50-year-old Caucasian woman who had headaches, memory difficulties, and diabetes insipidus was found to have a 2.5cm suprasellar mass. Langerhans cell histiocytosis was diagnosed following stereotactic brain biopsy. Further workup revealed no other lesions. Initial radiation treatment succeeded in shrinking the tumor and relieving clinical symptoms temporarily; however, growth and recurrence of clinical symptoms was noted at 9 months. Re-irradiation was well tolerated and the patient had no acute side effects. CONCLUSION: Isolated hypophyseal involvement by Langerhans cell histiocytosis in adults is a unique presentation of a rare disease. Although radiotherapy doses as low as 20Gy have been reported to offer control, this case demonstrates that higher doses may be warranted to ensure tumor control. With modern imaging and radiotherapy techniques higher doses should offer little increased more durable risk to surrounding critical structures