Semiconductor nanostructures for spectral filtering

International audienceWe present theoretical and experimental study of nanostructured guided-mode resonant filter, made of a highly doped InAsSb grating and a GaSb waveguide

PeroxiBase: a database with new tools for peroxidase family classification

Peroxidases (EC 1.11.1.x), which are encoded by small or large multigenic families, are involved in several important physiological and developmental processes. They use various peroxides as electron acceptors to catalyse a number of oxidative reactions and are present in almost all living organisms. We have created a peroxidase database (http://peroxibase.isb-sib.ch) that contains all identified peroxidase-encoding sequences (about 6000 sequences in 940 organisms). They are distributed between 11 superfamilies and about 60 subfamilies. All the sequences have been individually annotated and checked. PeroxiBase can be consulted using six major interlink sections ‘Classes', ‘Organisms', ‘Cellular localisations', ‘Inducers', ‘Repressors' and ‘Tissue types'. General documentation on peroxidases and PeroxiBase is accessible in the ‘Documents' section containing ‘Introduction', ‘Class description', ‘Publications' and ‘Links'. In addition to the database, we have developed a tool to classify peroxidases based on the PROSITE profile methodology. To improve their specificity and to prevent overlaps between closely related subfamilies the profiles were built using a new strategy based on the silencing of residues. This new profile construction method and its discriminatory capacity have been tested and validated using the different peroxidase families and subfamilies present in the database. The peroxidase classification tool called PeroxiScan is accessible at the following address: http://peroxibase.isb-sib.ch/peroxiscan.ph

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

The oxidation of GaSb in aqueous environments has gained interest by the advent of plasmonic antimonide-based compound semiconductors for molecular sensing applications. This work focuses on quantifying the GaSb–water reaction kinetics by studying a model compound system consisting of a 50 nm thick GaSb layer on a 1000 nm thick highly Si-doped epitaxial grown InAsSb layer. Tracing of phonon modes by Raman spectroscopy over 14 h of reaction time shows that within 4 h, the 50 nm of GaSb, opaque for visible light, transforms to a transparent material. Energy-dispersive x-ray spectroscopy shows that the reaction leads to antimony depletion and oxygen incorporation. The final product is a gallium oxide. The good conductivity of the highly Si-doped InAsSb and the absence of conduction states through the oxide are demonstrated by tunneling atomic force microscopy. Measuring the reflectivity of the compound layer structure from 0.3 to 20 μm and fitting of the data by the transfer-matrix method allows us to determine a refractive index value of 1.6 ± 0.1 for the gallium oxide formed in water. The investigated model system demonstrates that corrosion, i.e. antimony depletion and oxygen incorporation, transforms the narrow band gap material GaSb into a gallium oxide transparent in the range from 0.3 to 20 μm

First Measurement of 72Ge(n,γ) at n_TOF

9th European Summer School on Experimental Nuclear AstrophysicsThe slow neutron capture process (s-process) is responsible for producing about half of the elemental abundances heavier than iron in the universo

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix

By using metal-free plasmonics, we report on the excitation of Fano-like resonances in the mid-infrared where the Fano asymmetric parameter, q, varies when the dielectric environment of the plasmonic resonator changes. We use silicon doped InAsSb alloy deposited by molecular beam epitaxy on GaSb substrate to realize the plasmonic resonators exclusively based on semiconductors. We first demonstrate the possibility to realize high quality samples of embedded InAsSb plasmonic resonators into GaSb host using regrowth technique. The high crystalline quality of the deposited structure is confirmed by scanning transmission electron microscopy (STEM) observation. Second, we report Fano-like resonances associated to localized surface plasmons in both cases: uncovered and covered plasmonic resonators, demonstrating a strong line shape modification. The optical properties of the embedded structures correspond to those modeled by finite-difference time-domain (FDTD) method and by a model based on Fano-like line shape. Our results show that all-semiconductor plasmonics gives the opportunity to build new plasmonic structures with embedded resonators of highly doped semiconductor in a matrix of un-doped semiconductor for mid-IR applications

Expression of VE-Cadherin in Peritubular Endothelial Cells during Acute Rejection after Human Renal Transplantation

Genes involved in acute rejection (AR) after organ transplantation remain to be further elucidated. In a previous work we have demonstrated the under-expression of VE-Cadherin by endothelial cells (EC) in AR following murine and human heart transplantation. Serial sections from 15 human kidney Banff-graded transplant biopsies were examined for the presence of VE-Cadherin and CD34 staining by immunohistochemistry (no AR (n = 5), AR grade IA (n = 5), or AR grade IIA (n = 5)). Quantification of peritubular EC staining were evaluated and results were expressed by the percentage of stained cells per surface analysed. There was no difference in CD34 staining between the 3 groups. VE-Cadherin expression was significantly reduced in AR Grade IIA when compared to no AR (P = .01) and to AR grade IA (P = .02). This study demonstrates a reduced VE-Cadherin expression by EC in AR after renal transplantation. The down-regulation of VE-Cadherin may strongly participate in human AR

Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photo-annealing of the semiconductor is attributed to the dissociation of the N-H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing

Mid-IR heterogeneous silicon photonics

In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources