PtSi Clustering In Silicon Probed by Transport Spectroscopy

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting

Nature of microscopic heat carriers in nanoporous silicon

We performed a systematic analysis of the vibrational modes in nanoporous silicon for different values of porosity, separating them into extended modes (diffusons and propagons) and localized vibrations (locons). By calculating the density of states, the participation ratio, and the systems' dispersion curves, the spatial character of each mode as well as the effect of porosity on the thermal conductivity have been investigated. An increase of porosity is shown to promote the existence of increasingly localized modes on one side, and the progressive transformation of propagons to diffusons on the other. Finally, we provide evidence of the sizable contribution of locons to thermal transport found in large porosity samples and discuss the mechanism of energy transfer in terms of mode-mode autocorrelations and cross-correlations

Indications of Phonon Hydrodynamics in Telescopic Silicon Nanowires

The validity of Fourier’s law in telescopic nanowires is tested by means of molecular dynamics simulations. We observe that the radial dependence of the heat-flux profile, the temperature jump, and the appearance of vorticity obtained in molecular dynamics telescopic wires near the contact point acquire a hydrodynamic character, and we show that they are incompatible with Fourier’s law. We propose the Guyer-Krumhansl equation as a generalization capable of capturing these hydrodynamic effects. Lattice-dynamics results show that the thermal average of the confined modes shows no radial dependence of the vibrating energy inside the wire. This means that hydrodynamic effects could not be related to the confinement effects in these small systems

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD)

Concordia entre el Cura de Bexis i el Monasterio de Portacęli sobre el pago del diezmo de la Masia del Collado sita en d[ic]ho t[ermi]no : recivida p[o]r Pablo Perez No[tari]o en 24 de maio de 1612.

MsEl cura de Begís és José Lázar