Landau-Fermi liquid analysis of the 2D t-t' Hubbard model

We calculate the Landau interaction function f(k,k') for the two-dimensional t-t' Hubbard model on the square lattice using second and higher order perturbation theory. Within the Landau-Fermi liquid framework we discuss the behavior of spin and charge susceptibilities as function of the onsite interaction and band filling. In particular we analyze the role of elastic umklapp processes as driving force for the anisotropic reduction of the compressibility on parts of the Fermi surface.Comment: 10 pages, 16 figure

Merging of the USGS Atlas of Mercury 1:5,000,000 Geologic Series

After 30 years, the planet Mercury is going to give us new information. The NASA MESSENGER [1] already made its first successful flyby on December 2007 while the European Space Agency and the Japanese Space Agency ISAS/JAXA are preparing the upcoming mission BepiColombo [2]. In order to contribute to current and future analyses on the geology of Mercury, we have started to work on the production of a single digital geologic map of Mercury derived from the merging process of the geologic maps of the Atlas of Mercury, produced by the United States Geological Survey, based on Mariner 10 data. The aim of this work is to merge the nine maps so that the final product reflects as much as possible the original work. Herein we describe the data we used, the working environment and the steps made for producing the final map

Trajectory attractors for the Sun-Liu model for nematic liquid crystals in 3D

In this paper we prove the existence of a trajectory attractor (in the sense of V.V. Chepyzhov and M.I. Vishik) for a nonlinear PDE system coming from a 3D liquid crystal model accounting for stretching effects. The system couples a nonlinear evolution equation for the director d (introduced in order to describe the preferred orientation of the molecules) with an incompressible Navier-Stokes equation for the evolution of the velocity field u. The technique is based on the introduction of a suitable trajectory space and of a metric accounting for the double-well type nonlinearity contained in the director equation. Finally, a dissipative estimate is obtained by using a proper integrated energy inequality. Both the cases of (homogeneous) Neumann and (non-homogeneous) Dirichlet boundary conditions for d are considered.Comment: 32 page

GaAs Sub-Micron and Nano Islands by Droplet Epitaxy on Si

Merging the high effi?ciency light emitting III-V semiconductors with the state-of-the-art Silicon based electronics is of great interest for the realization of new optoelectronic devices. Unfortunately the heteroepitaxial growth of GaAs thin ?films on Si is a diffi?cult task because of the di?fference in the lattice constant, the polar/non-polar surface interaction and the di?fference in the thermal expansion coeffi?cients. We present for the ?first time the MBE growth of GaAs nanostructures on Si substrates by Droplet Epitaxy (DE) [1,2]. We believe this growth method to be promising for the growth of high quality GaAs nanoislands directly on Silicon. In the DE, the substrate is irradiated by a Ga molecular beam fl?ux ?first, leading to the formation of numerous fi?ne Ga droplets with uniform size, which are subsequently crystallized into GaAs nanostructures by an As molecular beam supply. By changing the Ga droplets deposition temperature is possible to change independently the size and the density of the droplets, while by varying the As ?flux for the crystallization we can change the fi?nal shape of the GaAs nanocrystals. We present the results for the growth of GaAs on Si by DE where the density of the GaAs nanoislands was changed by two orders of magnitude, while the size is varied from around 200 nm to around 20 nm. Measurements by X-ray microanalysis in the TEM con- fi?rmed the reaction between Ga and As with formation of GaAs. This has also seen by the presence of Moir? fringes in the TEM images taken in the two beam di?raction mode. The discontinuities of some Moir? fringes would suggest the presence of dislocations

Spectrophotometric properties of dwarf planet Ceres from the VIR spectrometer on board the Dawn mission

We study the spectrophotometric properties of dwarf planet Ceres in the VIS-IR spectral range by means of hyper-spectral images acquired by the VIR imaging spectrometer on board the NASA Dawn mission. Disk-resolved observations with a phase angle within the $7^{\circ}<\alpha<132^{\circ}$ interval were used to characterize Ceres' phase curve in the 0.465-4.05 $\mu$m spectral range. Hapke's model was applied to perform the photometric correction of the dataset, allowing us to produce albedo and color maps of the surface. The $V$-band magnitude phase function of Ceres was fitted with both the classical linear model and H-G formalism. The single-scattering albedo and the asymmetry parameter at 0.55$\mu$m are $w=0.14\pm0.02$ and $\xi=-0.11\pm0.08$, respectively (two-lobe Henyey-Greenstein phase function); the modeled geometric albedo is $0.094\pm0.007$; the roughness parameter is $\bar{\theta}=29^{\circ}\pm6^{\circ}$. Albedo maps indicate small variability on a global scale with an average reflectance of $0.034 \pm 0.003$. Isolated areas such as the Occator bright spots, Haulani, and Oxo show an albedo much higher than average. We measure a significant spectral phase reddening, and the average spectral slope of Ceres' surface after photometric correction is $1.1\%k\AA^{-1}$ and $0.85\%k\AA^{-1}$ at VIS and IR wavelengths, respectively. Broadband color indices are $V-R=0.38\pm0.01$ and $R-I=0.33\pm0.02$. H-G modeling of the $V$-band magnitude phase curve for $\alpha<30^{\circ}$ gives $H=3.14\pm0.04$ and $G=0.10\pm0.04$, while the classical linear model provides $V(1,1,0^{\circ})=3.48\pm0.03$ and $\beta=0.036\pm0.002$. The comparison with spectrophotometric properties of other minor bodies indicates that Ceres has a less back-scattering phase function and a slightly higher albedo than comets and C-type objects. However, the latter represents the closest match in the usual asteroid taxonomy.Comment: 14 pages, 20 figures, published online on Astronomy and Astrophysics on 13 February 2017. Revised to reflect minor changes in text and figures made in proofs, updated value of V-R and R-

From nano voids to blisters in hydrogenated amorphous silicon

AFM and FTIR spectroscopy were applied to study thè relationship between surface blisters and nanovoids in annealed hydrogenated a-Si. The influence of thè H bonding configuration on thè way thè nanovoids give rise to thè blisters is discussed. Annealing causes an increase of thè polymers density. As they reside on thè voids walls their density increase causes an increase of thè voids volume. The polymers may release H inside thè voids with creation of H2 gas, whose expansion, upon annealing, further contributes to thè volume increase of thè voids till thè formation of surface blisters

97: Positron Emission Tomography Identifies a Differential Pattern of Bone Marrow FdG Uptake in "Poor" and "Good" Peripheral Stem Cell Mobilizers

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