Heavy quasiparticles in the ferromagnetic superconductor ZrZn2

We report a study of the de Haas-van Alphen effect in the normal state of the ferromagnetic superconductor ZrZn2. Our results are generally consistent with an LMTO band structure calculation which predicts four exchange-split Fermi surface sheets. Quasiparticle effective masses are enhanced by a factor of about 4.9 implying a strong coupling to magnetic excitations or phonons. Our measurements provide insight in to the mechanism for superconductivity and unusual thermodynamic properties of ZrZn2.Comment: 5 pages, 2 figures (one color

Carbono acumulado por sistemas de manejo do solo em experimento de longa duração, em Passo Fundo, RS.

Orientador: Fabiano Daniel De Bona

Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results

Herein, the results are reviewed concerning reliability of high-electron mobility transistors (HEMTs) based on GaN, which currently represent the technology of choice for high-efficiency microwave and millimeter-wave power amplifiers. Several failure mechanisms of these devices are extensively studied, including converse piezoelectric effects, formation of conductive percolation paths at the edge of gate toward the drain, surface oxidation of GaN, time-dependent breakdown of GaN buffer, and of field-plate dielectric. For GaN HEMTs with scaled gate length, the simultaneous control of short-channel effects, deep-level dispersion, and hot-electron-induced degradation requires a careful optimization of epitaxial material quality and device design

Improvement of imiquimod solubilization and skin retention via tpgs micelles: Exploiting the co-solubilizing effect of oleic acid

Imiquimod (IMQ) is an immunostimulant drug approved for the topical treatment of actinic keratosis, external genital-perianal warts as well as superficial basal cell carcinoma that is used off-label for the treatment of different forms of skin cancers, including some malignant melanocytic proliferations such as lentigo maligna, atypical nevi and other in situ melanoma-related diseases. Imiquimod skin delivery has proven to be a real challenge due to its very low water-solubility and reduced skin penetration capacity. The aim of the work was to improve the drug solubility and skin retention using micelles of d-α-tocopheryl polyethylene glycol 1000 succinate (TPGS), a water-soluble derivative of vitamin E, co-encapsulating various lipophilic compounds with the potential ability to improve imiquimod affinity for the micellar core, and thus its loading into the nanocarrier. The formulations were characterized in terms of particle size, zeta potential and stability over time and micelles performance on the skin was evaluated through the quantification of imiquimod retention in the skin layers and the visualization of a micelle-loaded fluorescent dye by two-photon microscopy. The results showed that imiquimod solubility strictly depends on the nature and concentration of the co-encapsulated compounds. The micellar formulation based on TPGS and oleic acid was identified as the most interesting in terms of both drug solubility (which was increased from few µg/mL to 1154.01 ± 112.78 µg/mL) and micellar stability (which was evaluated up to 6 months from micelles preparation). The delivery efficiency after the application of this formulation alone or incorporated in hydrogels showed to be 42-and 25-folds higher than the one of the commercial creams

Mitigating the stress of drought on soil respiration by selective thinning: contrasting effects of drought on soil respiration of two oak species in a Mediterranean forest

Drought has been shown to reduce soil respiration (SR) in previous studies. Meanwhile, studies of the effect of forest management on SR yielded contrasting results. However, little is known about the combined effect of drought and forest management on SR. To investigate if the drought stress on SR can be mitigated by thinning, we implemented plots of selective thinning and 15% reduced rainfall in a mixed forest consisting of the evergreen Quercus ilex and deciduous Quercus cerrioides; we measured SR seasonally from 2004 to 2007. Our results showed a clear soil moisture threshold of 9%; above this value, SR was strongly dependent on soil temperature, with Q10 of 3.0-3.8. Below this threshold, the relationship between SR and soil temperature weakened. We observed contrasting responses of SR of target oak species to drought and thinning. Reduced rainfall had a strong negative impact on SR of Q. cerrioides, whereas the effect on SR for Q. ilex was marginal or even positive. Meanwhile, selective thinning increased SR of Q. cerrioides, but reduced that of Q. ilex. Overall, our results showed that the negative effect of drought on SR can be offset through selective thinning, but the effect is attenuated with time

degradation of gan on gan vertical diodes submitted to high current stress

Abstract GaN-on-GaN vertical devices are expected to find wide application in power electronics, thanks to the high current densities, the low on-resistance and the high breakdown voltage. So far, only few papers on the reliability of GaN-on-GaN vertical devices have been published in the literature. This paper investigates the degradation of GaN-on-GaN pn diodes submitted to stress at high current density. The study was carried out by means of electrical characterization and electroluminescence (EL) measurements. We demonstrate that: (i) when submitted to stress at high current density, the devices show significant changes in the electrical characteristics: an increase in on-resistance/turn-on voltage, an increase in the generation/recombination components, the creation of shunt-paths. (ii) the increase in on-resistance is strongly correlated to the decrease in the EL signal emitted by the diodes. (iii) the degradation kinetics have a square-root dependence on time, indicative of a diffusion process. The results are interpreted by considering that stress induces a diffusion of hydrogen from the highly-p-type doped surface towards the pn junction. This results in a decrease in hole concentration, due to the creation of Mg H bonds, and in a lower hole injection. As a consequence, on-resistance increases while EL signal shows a correlated decrease

De espectador à produtor de imagens: seguindo pistas do trabalho com stop motion na Educação

Este artigo apresenta o resultado de experiências com a técnica de animação em stop motion em cursos de formação de professores. As potencialidades da utilização da técnica em contexto educacional são analisadas à luz dos trabalhos de Walter Benjamin, Roland Barthes, Vanessa Schwartz e Jeannene M. Przybyski, entre outros, sobre fotografia, cinema e a imagem na modernidade. São discutidos o surgimento da figura do espectador na modernidade e os impactos da fotografia na subjetividade, na percepção do tempo e da realidade, bem como os conceitos benjaminianos de inconsciente ótico, montagem e imagem dialética. O trabalho discute como a utilização da técnica do stop motion pode favorecer a passagem dos sujeitos da condição de espectadores para a de produtores de imagens, permitindo outra compreensão e tomada de consciência dos usos e sentidos das imagens na cultura contemporânea e em contexto digital, bem como outras experiências de tempo e subjetivação na educação

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-Assisted C-V analysis. Under positive gate stress, small negative V th shifts (low stress) and a positive V thshifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator interface. Trapping effects are eliminated through exposure to UV light; wavelength-dependent analysis extracts the threshold de-Trapping energy ≈2.95 eV. UV-Assisted CV measurements describe the distribution of states at the GaN/Al2O3 interface. The described methodology provides an understanding and assessment of trapping mechanisms in vertical GaN transistors