Observation of Interaction of Spin and Intrinsic Orbital Angular Momentum of Light

Interaction of spin and intrinsic orbital angular momentum of light is observed, as evidenced by length-dependent rotations of both spatial patterns and optical polarization in a cylindrically-symmetric isotropic optical fiber. Such rotations occur in straight few-mode fiber when superpositions of two modes with parallel and anti-parallel orientation of spin and intrinsic orbital angular momentum (IOAM=$2\hslash$) are excited, resulting from a degeneracy splitting of the propagation constants of the modes.Comment: 6 pages, 5 figures, and a detailed supplement. Version 3 corrects a typo and adds the journal referenc

Development of a lightweight, light-trapped, thin GaAs solar cell for spacecraft applications

This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for advanced space power systems. The device designs can achieve 24.5 percent efficiency at AMO and 1X conditions, corresponding to a power density of 330 W/m2. A significant breakthrough lies in the potential for a specific power of 2906 W/kg because the entire device is less than 1.5 microns thick. This represents a 440 percent improvement over conventional 4-mil silicon solar cells. In addition to being lightweight, this thin device design can result in increased radiation tolerance. The attachment of the cover glass support to the front surface has been demonstrated by both silicone and electrostatic bonding techniques. Device parameters of 1.002 volts open-circuit voltage, 80 percent fill factor, and a short-circuit current of 24.3 mA/sq cm have been obtained. This demonstrates a conversion efficiency of 14.4 percent resulting in a specific power of 2240 W/kg. Additionally, this new technology offers an alternative approach for enabling multi-bandgap solar cells and high output space solar power devices. The thin device structure can be applied to any 3-5 based solar cell application, yielding both an increase in specific power and radiation tolerance

Buffer layer-assisted growth of Ge nanoclusters on Si

In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Abstract. This work summarizes recent data on minority carrier lifetime in n-and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s

Capturing Single Cell Genomes of Active Polysaccharide Degraders: An Unexpected Contribution of Verrucomicrobia

Microbial hydrolysis of polysaccharides is critical to ecosystem functioning and is of great interest in diverse biotechnological applications, such as biofuel production and bioremediation. Here we demonstrate the use of a new, efficient approach to recover genomes of active polysaccharide degraders from natural, complex microbial assemblages, using a combination of fluorescently labeled substrates, fluorescence-activated cell sorting, and single cell genomics. We employed this approach to analyze freshwater and coastal bacterioplankton for degraders of laminarin and xylan, two of the most abundant storage and structural polysaccharides in nature. Our results suggest that a few phylotypes of Verrucomicrobia make a considerable contribution to polysaccharide degradation, although they constituted only a minor fraction of the total microbial community. Genomic sequencing of five cells, representing the most predominant, polysaccharide-active Verrucomicrobia phylotype, revealed significant enrichment in genes encoding a wide spectrum of glycoside hydrolases, sulfatases, peptidases, carbohydrate lyases and esterases, confirming that these organisms were well equipped for the hydrolysis of diverse polysaccharides. Remarkably, this enrichment was on average higher than in the sequenced representatives of Bacteroidetes, which are frequently regarded as highly efficient biopolymer degraders. These findings shed light on the ecological roles of uncultured Verrucomicrobia and suggest specific taxa as promising bioprospecting targets. The employed method offers a powerful tool to rapidly identify and recover discrete genomes of active players in polysaccharide degradation, without the need for cultivation

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design

Quality indicators for patients with traumatic brain injury in European intensive care units

Background: The aim of this study is to validate a previously published consensus-based quality indicator set for the management of patients with traumatic brain injury (TBI) at intensive care units (ICUs) in Europe and to study its potential for quality measur

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures