Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3.

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10-4 Ω.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga2O3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy measurements confirm this finding and the interpretation of the experimental results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time, it demonstrates for the first time p-type and remarkable n-type conductivity in Ga2O3 which should usher in the development of Ga2O3 devices and advance optoelectronics and high-power devices

Enhanced flux pinning isotropy by tuned nanosized defect network in superconducting YBa2Cu3O6+x films

Striving to improve the critical current density Jc of superconductingYBa(2)Cu(3)O(6+x) (YBCO) thin films via enhanced vortex pinning, the interplay between film growth mechanisms and the formation of nanosized defects, both natural and artificial, is systematically studied in undoped and BaZrO3 (BZO)-doped YBCO thin films. The films were grown via pulsed laser deposition (PLD), varying the crystal grain size of the targets in addition to the dopant content. The microstructure of the PLD target has been observed to have a great impact on that of the deposited thin films, including the formation of vortex pinning centers, which has direct implications on the superconducting performance, especially on the isotropy of flux pinning properties. Based on experimentally measured angular dependencies of Jc, coupled with a molecular dynamics (MD) simulation of flux pinning in the YBCO films, we present a quantitative model of how the splay and fragmentation of BZO nanorods artifically introduced into the YBCO film matrix explain the majority of the observed critical current anisotropy

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin‐film transistors reveals moderate charge carrier mobilities as high as 0.2 cm$^{2}$ V$^{-1}$s$^{-1}$. The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler‐broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (V$^{Zn}$) with one or more oxygen vacancies (V$^{O}$) in larger structural entities. Such V$^{O}$‐V$^{Zn}$ defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave‐assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction

TiO2 phase engineering by millisecond range annealing for highly efficient photocatalysis

Air pollution and the energy crisis are the two main driving forces behind the development of alternative, environmentally friendly methods of energy production. Photoactive materials can be used both to clean the air and to produce green hydrogen for clean energy. Transition metal oxides are one of the most considered materials for high-performance photocatalysis. In this work, we investigate the effect of millisecond flash lamp annealing (FLA) of TiO2 on the degradation of methyl blue (MB) and methyl orange (MO). To reduce the energy consumption of the TiO2 deposition process, the layers were made using magnetron sputtering at room temperature followed by millisecond FLA. By controlling the flash energy input, we can tune the phase formation of TiO2 films from pure anatase to mixed anatase/rutile phases. Scanning electron microscopy, positron annihilation spectroscopy, photoluminescence, and X-ray diffraction studies show that the crystal size and film quality increase with increasing annealing temperature. Photocatalytic experiments demonstrate that FLA-treated TiO2 films are active in degrading both MB and MO. This makes them attractive not only for the production of green hydrogen but also for the purification of water from medical contaminantsTED2021-129876B-I0

Exploring the anti-site disorder and oxygen vacancies in Sr2FeMoO6 thin films

AbstractTo address the importance of nanoscale defects in complex magnetic oxides, we present an effective tool, variable energy positron annihilation spectroscopy, for probing the relatively small changes in anti-site disorder and oxygen vacancies of the in situ annealed double perovskite SrFeMoO thin films. By controlling the annealing conditions in wide pressure and temperature ranges and thus affecting the amount of nanoscale defects, we show that the magnetic properties of SrFeMoO thin films can be modified, particularly with the oxygen nonstoichiometry, and hence their spintronic functionality can be improved. On the basis of our findings together with proposed mechanism, we suggest that the annealing treatments can also be scaled to other complex magnetic perovskites to engineer nanoscale defects and thus improve their usability in future spintronic applications.</p

Nature of the positron state in CdSe quantum dots

Previous studies have shown that positron-annihilation spectroscopy is a highly sensitive probe of the electronic structure and surface composition of ligand-capped semiconductor Quantum Dots (QDs) embedded in thin films. Nature of the associated positron state, however, whether the positron is confined inside the QDs or localized at their surfaces, has so far remained unresolved. Our positron-annihilation lifetime spectroscopy (PALS) studies of CdSe QDs reveal the presence of a strong lifetime component in the narrow range of 358-371 ps, indicating abundant trapping and annihilation of positrons at the surfaces of the QDs. Furthermore, our ab-initio calculations of the positron wave function and lifetime employing a recent formulation of the Weighted Density Approximation (WDA) demonstrate the presence of a positron surface state and predict positron lifetimes close to experimental values. Our study thus resolves the longstanding question regarding the nature of the positron state in semiconductor QDs, and opens the way to extract quantitative information on surface composition and ligand-surface interactions of colloidal semiconductor QDs through highly sensitive positron-annihilation techniques.Comment: 14 pages, 3 figure

Positron annihilation analysis of nanopores and growth mechanism of oblique angle evaporated TiO2 and SiO2 thin films and multilayers

The nano-porosity embedded into the tilted and separated nanocolumns characteristic of the microstructure of evaporated thin films at oblique angles has been critically assessed by various variants of the positron annihilation spectroscopy. This technique represents a powerful tool for the analysis of porosity, defects and internal interfaces of materials, and has been applied to different as-deposited SiO and TiO thin films as well as SiO/TiO multilayers prepared by electron beam evaporation at 70° and 85° zenithal angles. It is shown that, under same deposition conditions, the concentration of internal nano-pores in SiO is higher than in TiO nanocolumns, while the situation is closer to this latter in TiO/SiO multilayers. These features have been compared with the predictions of a Monte Carlo simulation of the film growth and explained by considering the influence of the chemical composition on the growth mechanism and, ultimately, on the structure of the films

Regulating oxygen ion transport at the nanoscale to enable highly cyclable magneto-ionic control of magnetism

Altres ajuts: acords transformatius de la UABMagneto-ionics refers to the control of magnetic properties of materials through voltage-driven ion motion. To generate effective electric fields, either solid or liquid electrolytes are utilized, which also serve as ion reservoirs. Thin solid electrolytes have difficulties to (i) withstand high electric fields without electric pinholes and (ii) maintain stable ion transport during long-term actuation. In turn, the use of liquid electrolytes can result in poor cyclability, thus limiting their applicability. Here we propose a nanoscale-engineered magneto-ionic architecture (comprising a thin solid electrolyte in contact with a liquid electrolyte), that drastically enhances cyclability while preserving sufficiently high electric fields to trigger ion motion. Specifically, we show that the insertion of a highly nanostructured (amorphous-like) Ta layer (with suitable thickness and electric resistivity) between a magneto-ionic target material (i.e., Co3O4) and the liquid electrolyte, increases magneto-ionic cyclability from < 30 cycles (when no Ta is inserted) to more than 800 cycles. Transmission electron microscopy together with variable energy positron annihilation spectroscopy reveal the crucial role of the generated TaOx interlayer as a solid-electrolyte (i.e., ionic conductor) that improves magneto-ionic endurance by proper tuning of the types of voltage-driven structural defects. The Ta layer is very effective in trapping oxygen and hindering O2- ions from moving into the liquid electrolyte, thus keeping O2- motion mainly restricted between Co3O4 and Ta when voltage of alternating polarity is applied. We demonstrate that this approach provides a suitable strategy to boost magneto-ionics by combining the benefits of solid and liquid electrolytes in a synergetic manner