Preferential Amplification of CD8 Effector-T Cells after Transcutaneous Application of an Inactivated Influenza Vaccine: A Randomized Phase I Trial

Background: Current conventional vaccination approaches do not induce potent CD8 T-cell responses for fighting mostly variable viral diseases such as influenza, avian influenza viruses or HIV. Following our recent study on vaccine penetration by targeting of vaccine to human hair follicular ducts surrounded by Langerhans cells, we tested in the first randomized Phase-Ia trial based on hair follicle penetration (namely transcutaneous route) the induction of virus-specific CD8 T cell responses. Methods and Findings: We chose the inactivated influenza vaccine – a conventional licensed tetanus/influenza (TETAGRIP®) vaccine – to compare the safety and immunogenicity of transcutaneous (TC) versus IM immunization in two randomized controlled, multi-center Phase I trials including 24 healthy-volunteers and 12 HIV-infected patients. Vaccination was performed by application of inactivated influenza vaccine according to a standard protocol allowing the opening of the hair duct for the TC route or needle-injection for the IM route. We demonstrated that the safety of the two routes was similar. We showed the superiority of TC application, but not the IM route, to induce a significant increase in influenza-specific CD8 cytokine-producing cells in healthy-volunteers and in HIV-infected patients. However, these routes did not differ significantly for the induction of influenza-specific CD4 responses, and neutralizing antibodies were induced only by the IM route. The CD8 cell response is thus the major immune response observed after TC vaccination. Conclusions: This Phase Ia clinical trial (Manon05) testing an anti-influenza vaccine demonstrated that vaccines designed for antibody induction by the IM route, generate vaccine-specific CD8 T cells when administered transcutaneously. These results underline the necessity of adapting vaccination strategies to control complex infectious diseases when CD8 cellular responses are crucial. Our work opens up a key area for the development of preventive and therapeutic vaccines for diseases in which CD8 cells play a crucial role

Microcapteurs chimiques basés sur des couches nanométriques de silicium polycristallin : application à la détection de plomb

The aim of this research work is to implement a lead ions sensor based on polycrystalline silicon nanostructures. This material has been intensively studied by electrical and physical characterization. This study showed that structures such as polysilicon nanoribbons or nanowires have poor crystalline quality but satisfying enough electrical properties to be used as a sensor sensible elements. Nanoribbons have been functionnalized by spontaneous grafting of diazonium salts that enable lead ions trapping at the surface of these nanoribbons. Thanks to the functionnalization, sensor reached a limit detection as low as 2.10-7 mol/L. These results prove that sensing lead ions is possible thanks to low-cost polysilicon nanostructures. Development of a gate-all-around transistor based on polycrystalline silicon nanowires is proposed in this manuscript. It could lead to increase sensibility of that type of microsensors.Ces travaux de thèse ont pour but de mettre en œuvre un capteur de plomb à base de nanostructures de silicium polycristallin. L'étude physique des structures de type nanorubans ou nanofils de silicium polycristallin a montré que ces derniers possèdent de faibles qualités cristallines mais des propriétés électriques suffisantes pour être utilisées comme éléments sensibles d'un capteur. Les nanorubans ont été fonctionnalisés par greffage spontané des sels de diazonium, capables de pré-concentrer des ions de plomb à la surface de la nanocouche. Cette fonctionnalisation a permis de détecter des traces de plomb, le capteur atteignant une limite de détection de 2.10-7 mol/L. Ces résultats montrent ainsi que la détection de plomb est possible avec des nanostructures de silicium polycristallin dont le procédé de fabrication est relativement bon marché. Le développement d'un transistor gate-all-around (GAA) à base de nanofils de silicium polycristallin est proposé dans cette thèse. Son utilisation avec deux grilles indépendantes a permis de caractériser électriquement et physiquement les nanofils de silicium polycristallin. Les caractéristiques électriques du transistor GAA sont par ailleurs encourageants pour une utilisation en tant que capteur pour diminuer la sensibilité et les limites de détection d'ions de plomb

Chemical microsensors based on polycrystalline silicon layers at nanoscale : application to lead detection

Ces travaux de thèse ont pour but de mettre en œuvre un capteur de plomb à base de nanostructures de silicium polycristallin. L'étude physique des structures de type nanorubans ou nanofils de silicium polycristallin a montré que ces derniers possèdent de faibles qualités cristallines mais des propriétés électriques suffisantes pour être utilisées comme éléments sensibles d'un capteur. Les nanorubans ont été fonctionnalisés par greffage spontané des sels de diazonium, capables de pré-concentrer des ions de plomb à la surface de la nanocouche. Cette fonctionnalisation a permis de détecter des traces de plomb, le capteur atteignant une limite de détection de 2.10-7 mol/L. Ces résultats montrent ainsi que la détection de plomb est possible avec des nanostructures de silicium polycristallin dont le procédé de fabrication est relativement bon marché. Le développement d'un transistor gate-all-around (GAA) à base de nanofils de silicium polycristallin est proposé dans cette thèse. Son utilisation avec deux grilles indépendantes a permis de caractériser électriquement et physiquement les nanofils de silicium polycristallin. Les caractéristiques électriques du transistor GAA sont par ailleurs encourageants pour une utilisation en tant que capteur pour diminuer la sensibilité et les limites de détection d'ions de plomb.The aim of this research work is to implement a lead ions sensor based on polycrystalline silicon nanostructures. This material has been intensively studied by electrical and physical characterization. This study showed that structures such as polysilicon nanoribbons or nanowires have poor crystalline quality but satisfying enough electrical properties to be used as a sensor sensible elements. Nanoribbons have been functionnalized by spontaneous grafting of diazonium salts that enable lead ions trapping at the surface of these nanoribbons. Thanks to the functionnalization, sensor reached a limit detection as low as 2.10-7 mol/L. These results prove that sensing lead ions is possible thanks to low-cost polysilicon nanostructures. Development of a gate-all-around transistor based on polycrystalline silicon nanowires is proposed in this manuscript. It could lead to increase sensibility of that type of microsensors

The Use of a Water Soluble Flexible Substrate to Embed Electronics in Additively Manufactured Objects: From Tattoo to Water Transfer Printed Electronics

The integration of electronics into the process flow of the additive manufacturing of 3D objects is demonstrated using water soluble films as a temporary flexible substrate. Three process variants are detailed to evaluate their capabilities to meet the additive manufacturing requirements. One of them, called water transfer printing, shows the best ability to fabricate electronics onto 3D additively manufactured objects. Moreover, a curved capacitive touchpad hidden by color films is successfully transferred onto the 3D objects, showing a potential application of this technology to fabricate fully additively manufactured discrete or even hidden electronic devices

Dual gate transistors based on polycrystalline silicon nanowires

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Dual-gate and gate-ail-around polycrystalline silicon nanowires field effect transistors Simulation and characterization

International audiencePolycrystalline silicon nanowires (poly-SiNWs) are synthesized using side wall spacer top-down method and classical photolithography techniques. This low-temperature (≤ 600°C) fabrication process is a low cost and fully compatible with planar complementary metal oxide semiconductor (CMOS) silicon technology. Independent biasing of each gate allows a possible threshold voltage control of the bottom gate transistors (BOT) and top gate transistors (TGT). Moreover, a new gate architecture passing from 2D to 3D, surrounding-gate transistors, called Gate-All-Around (GAA) where the gate circles the nanowire channel, allows a better electrostatic gate control. Numerical modeling of dual-gate structure and simulations are performed to estimate electrons and holes concentrations in the nanowire used as active layer versus applied gate voltages. Electrical performances of top and bottom-gate transistors are analyzed highlighting oxide-semiconducting nanowire interfaces difference in top and bottom gate configurations. Finally, GAA transistors characterization show that top channel conduction dominates when bias is applied on the surrounding gate. © 2018 Electrochemical Society Inc.All rights reserved

(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

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Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors

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Banc de mesure du bruit basse fréquence (1/f) pour la caractérisation des transistors MOS

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Water-Transferred, Inkjet-Printed Supercapacitors toward Conformal and Epidermal Energy Storage

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