8 research outputs found
Field effect enhancement in buffered quantum nanowire networks
III-V semiconductor nanowires have shown great potential in various quantum
transport experiments. However, realizing a scalable high-quality
nanowire-based platform that could lead to quantum information applications has
been challenging. Here, we study the potential of selective area growth by
molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer
layers. The buffered geometry allows for substantial elastic strain relaxation
and a strong enhancement of field effect mobility. We show that the networks
possess strong spin-orbit interaction and long phase coherence lengths with a
temperature dependence indicating ballistic transport. With these findings, and
the compatibility of the growth method with hybrid epitaxy, we conclude that
the material platform fulfills the requirements for a wide range of quantum
experiments and applications
Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10※000-25※000 cm V s consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings
Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.htmlSelective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance
Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10※000-25※000 cm V s consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings
Field effect enhancement in buffered quantum nanowire networks
arXiv:1802.07808v2III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.The project was supported by Microsoft Station Q, the European Research Council (ERC) under the
grant agreement No.716655 (HEMs-DAM), the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 722176, the Danish National Science Research Foundation and the Villum Foundation. SMS acknowledges funding from >Programa Internacional de Becas >la Caixa>-Severo Ochoa>. JA and SMS also acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, Grant no. SEV-2013-0295) and is funded by the CERCA Programme
/ Generalitat de Catalunya
Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.htmlSelective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
We present measurements and simulations of semiconductor-superconductor
heterostructure devices that are consistent with the observation of topological
superconductivity and Majorana zero modes. The devices are fabricated from
high-mobility two-dimensional electron gases in which quasi-one-dimensional
wires are defined by electrostatic gates. These devices enable measurements of
local and non-local transport properties and have been optimized via extensive
simulations for robustness against non-uniformity and disorder. Our main result
is that several devices, fabricated according to the design's engineering
specifications, have passed the topological gap protocol defined in Pikulin
{\it et al.}\ [arXiv:2103.12217]. This protocol is a stringent test composed of
a sequence of three-terminal local and non-local transport measurements
performed while varying the magnetic field, semiconductor electron density, and
junction transparencies. Passing the protocol indicates a high probability of
detection of a topological phase hosting Majorana zero modes. Our experimental
results are consistent with a quantum phase transition into a topological
superconducting phase that extends over several hundred millitesla in magnetic
field and several millivolts in gate voltage, corresponding to approximately
one hundred micro-electron-volts in Zeeman energy and chemical potential in the
semiconducting wire. These regions feature a closing and re-opening of the bulk
gap, with simultaneous zero-bias conductance peaks at {\it both} ends of the
devices that withstand changes in the junction transparencies. The measured
maximum topological gaps in our devices are 20-eV. This demonstration
is a prerequisite for experiments involving fusion and braiding of Majorana
zero modes.Comment: Fixed typos. Fig. 3 is now readable by Adobe Reade