The Outcomes of Selection in a Closed Herd on a Farm in Operation

A herd of Berkshire pigs was established in 2003 and subjected to selection without introduction of any genetic resources until 2007. The complete pedigree, including 410 boars and 916 sows, as well as the records from 5,845 pigs and 822 litters were used to investigate the results obtained from the selections. The index of selection for breeding values included days to 90 kg (D90kg), backfat thickness (BF) and number of piglets born alive (NBA). The average inbreeding coefficients of pigs were found to be 0.023, 0.008, 0.013, 0.025, 0.026, and 0.005 from 2003 to 2007, respectively. The genetic gains per year were 12.1 g, −0.04 mm, −3.13 days, and 0.181 head for average daily gain (ADG), BF, D90kg, and NBA, respectively. Breeding values of ADG, BF and D90kg were not significantly correlated with inbreeding coefficients of individuals, except for NBA (−0.21). The response per additional 1% of inbreeding was 0.0278 head reduction in NBA. The annual increase of inbreeding was 0.23% and the annual decrease in NBA due to inbreeding was 0.0064 head. This magnitude could be disregarded when compared with the annual gain in NBA (0.181 head). These results suggest that inbreeding and inbreeding depression on ordinary farms can be controlled with a proper breeding scheme and that breeding programs are economical and safe relative to the risks associated with importation of pigs

Unidirectional Macroscopic Alignment of Chlorobenzo[c]-[1,2,5]thiadiazole-Based Semiconducting Copolymers with Controlled Regiochemistry

Solution-processable donor-acceptor-type conjugated copolymers are considered one of the most promising alternatives to inorganic semiconductors. The introduction of strong electron-withdrawing groups in the acceptor units of the copolymers has been shown to favor fast charge transport; however, the correlation among the halogen-substituted molecular structure, solid-state packing, and charge transport properties is unclear. In this study, new chlorine-atom-substituted donor-acceptor copolymers comprising chlorobenzo[c]-[1,2,5]thiadiazole and 4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b ']dithiophene are synthesized and their physicochemical properties are compared with those of their unsubstituted or nitrogen-incorporated backbone analogs. In addition, the regioregularity of the synthesized copolymers is controlled to investigate the effects of regiochemistry on the polymer backbone alignment using the nanogroove method. The results demonstrate that different degrees of regioregularity in the main chains induce a substantially dissimilar effect of the nanogroove and capillary force on the orientation of the polymer backbone, long-range crystalline order, and charge transport properties of the conjugated polymers

Substrate-induced solvent intercalation for stable graphene doping

Here, we report a substrate-induced intercalation phenomenon of an organic solvent at the interface between monolayer graphene and a target substrate. A simple dipping of the transferred chemical vapor deposition (CVD)-grown graphene on the SiO2 substrate into chloroform (CHCl3, CF), a common organic solvent, induces a spontaneous formation of CF clusters beneath the basal plane of the graphene as well as inside the wrinkles. The microscopic and spectroscopic observations showed the doping behavior of monolayer graphene, which indicates the adsorption of CF to monolayer graphene. Interestingly, the intercalated organic solvent showed remarkable stability for over 40 days under ambient conditions. To reveal the underlying mechanism of the stable solvent intercalation, desorption energy of CF molecules at the graphene/substrate interface was measured using Arrhenius plots of the conductance change upon time and temperature. Two stages of solvent intercalations with high desorption energies (70 and 370 meV) were observed along with the consecutive shrinkage of the solvent clusters at the basal plane and the wrinkles, respectively. Moreover, the theoretical calculation based on density functional theory (DFT) also shows the strong intercalation energy of CF between monolayer graphene and the SiO2 substrate, which results from the stabilization of the graphene-SiO2 interactions. Furthermore, the thermal response of the conductance could be utilized to maintain a certain degree of p-doping of monolayer graphene, which provides the facile, sustainable, and controllable large-area doping method of graphene for future generation of printed flexible electronics.X113430sciescopu

Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in dewetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO2 gate dielectric. Dewetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters. Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flow-coated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering

Substrate-Induced Solvent Intercalation for Stable Graphene Doping

Here, we report a substrate-induced intercalation phenomenon of an organic solvent at the interface between monolayer graphene and a target substrate. A simple dipping of the transferred chemical vapor deposition (CVD)-grown graphene on the SiO₂ substrate into chloroform (CHCl₃, CF), a common organic solvent, induces a spontaneous formation of CF clusters beneath the basal plane of the graphene as well as inside the wrinkles. The microscopic and spectroscopic observations showed the doping behavior of monolayer graphene, which indicates the adsorption of CF to monolayer graphene. Interestingly, the intercalated organic solvent showed remarkable stability for over 40 days under ambient conditions. To reveal the underlying mechanism of the stable solvent intercalation, desorption energy of CF molecules at the graphene/substrate interface was measured using Arrhenius plots of the conductance change upon time and temperature. Two stages of solvent intercalations with high desorption energies (70 and 370 meV) were observed along with the consecutive shrinkage of the solvent clusters at the basal plane and the wrinkles, respectively. Moreover, the theoretical calculation based on density functional theory (DFT) also shows the strong intercalation energy of CF between monolayer graphene and the SiO₂ substrate, which results from the stabilization of the graphene–SiO₂ interactions. Furthermore, the thermal response of the conductance could be utilized to maintain a certain degree of p-doping of monolayer graphene, which provides the facile, sustainable, and controllable large-area doping method of graphene for future generation of printed flexible electronics

Inverse Transfer Method Using Polymers with Various Functional Groups for Controllable Graphene Doping

The polymer-supported transfer of chemical vapor deposition (CVD)-grown graphene provides large-area and high-quality graphene on a target substrate; however, the polymer and organic solvent residues left by the transfer process hinder the application of CVD-grown graphene in electronic and photonic devices. Here, we describe an inverse transfer method (ITM) that permits the simultaneous transfer and doping of graphene without generating undesirable residues by using polymers with different functional groups. Unlike conventional wet transfer methods, the polymer supporting layer used in the ITM serves as a graphene doping layer placed at the interface between the graphene and the substrate. Polymers bearing functional groups can induce n-doping or p-doping into the graphene depending on the electron-donating or -withdrawing characteristics of functional groups. Theoretical models of dipole layer-induced graphene doping offered insights into the experimentally measured change in the work function and the Dirac point of the graphene. Finally, the electrical properties of pentacene field effect transistors prepared using graphene electrodes could be enhanced by employing the ITM to introduce a polymer layer that tuned the work function of graphene. The versatility of polymer functional groups suggests that the method developed here will provide valuable routes to the development of applications of CVD-grown graphene in organic electronic devices

Substrate-Induced Solvent Intercalation for Stable Graphene Doping

Here, we report a substrate-induced intercalation phenomenon of an organic solvent at the interface between monolayer graphene and a target substrate. A simple dipping of the transferred chemical vapor deposition (CVD)-grown graphene on the SiO2 substrate into chloroform (CHCl3, CF), a common organic solvent, induces a spontaneous formation of CF clusters beneath the basal plane of the graphene as well as inside the wrinkles. The microscopic and spectroscopic observations showed the doping behavior of monolayer graphene, which indicates the adsorption of CF to monolayer graphene. Interestingly, the intercalated organic solvent showed remarkable stability for over 40 days under ambient conditions. To reveal the underlying mechanism of the stable solvent intercalation, desorption energy of CF molecules at the graphene/substrate interface was measured using Arrhenius plots of the conductance change upon time and temperature. Two stages of solvent intercalations with high desorption energies (70 and 370 meV) were observed along with the consecutive shrinkage of the solvent clusters at the basal plane and the wrinkles, respectively. Moreover, the theoretical calculation based on density functional theory (DFT) also shows the strong intercalation energy of CF between monolayer graphene and the SiO2 substrate, which results from the stabilization of the graphene-SiO2 interactions. Furthermore, the thermal response of the conductance could be utilized to maintain a certain degree of p-doping of monolayer graphene, which provides the facile, sustainable, and controllable large-area doping method of graphene for future generation of printed flexible electronics.close17

Inverse transfer method using polymers with various functional groups for controllable graphene doping

The polymer-supported transfer of chemical vapor deposition (CVD)-grown graphene provides large-area and high-quality graphene on a target substrate; however, the polymer and organic solvent residues left by the transfer process hinder the application of CVD-grown graphene in electronic and photonic devices. Here, we describe an inverse transfer method (ITM) that permits the simultaneous transfer and doping of graphene without generating undesirable residues by using polymers with different functional groups. Unlike conventional wet transfer methods, the polymer supporting layer used in the ITM serves as a graphene doping layer placed at the interface between the graphene and the substrate. Polymers bearing functional groups can induce n-doping or p-doping into the graphene depending on the electron-donating or -withdrawing characteristics of functional groups. Theoretical models of dipole layer-induced graphene doping offered insights into the experimentally measured change in the work function and the Dirac point of the graphene. Finally, the electrical properties of pentacene field effect transistors prepared using graphene electrodes could be enhanced by employing the ITM to introduce a polymer layer that tuned the work function of graphene. The versatility of polymer functional groups suggests that the method developed here will provide valuable routes to the development of applications of CVD-grown graphene in organic electronic devices.close0

pn-Heterojunction Effects of Perylene Tetracarboxylic Diimide Derivatives on Pentacene Field-Effect Transistor

We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors