Towards truly simultaneous PIXE and RBS analysis of layered objects in cultural heritage

For a long time, RBS and PIXE techniques have been used in the field of cultural heritage. Although the complementarity of both techniques has long been acknowledged, its full potential has not been yet developed due to the lack of general purpose software tools for analysing the data from both techniques in a coherent way. In this work we provide an example of how the recent addition of PIXE to the set of techniques supported by the DataFurnace code can significantly change this situation. We present a case in which a non homogeneous sample (an oxidized metal from a photographic plate -heliography- made by Niepce in 1827) is analysed using RBS and PIXE in a straightforward and powerful way that can only be performed with a code that treats both techniques simultaneously as a part of one single and coherent analysis. The optimization capabilities of DataFurnace, allowed us to obtain the composition profiles for these samples in a very simple way.Comment: 9 pages, 3 figure

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray 2 diffraction and transmission electron microscopy suggested the formation of an aluminumbased polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlNx and AlOy systems, prepared in similar conditions.This research is sponsored by FEDER funds through the program COMPETE-Programa Operacional Factores de Competitividade, by the national funds through FCT-Fundação para a Ciência e a Tecnologia, under the project PTDC/CTM-NAN/112574/2009 and Programa Pessoa 2010/2011 Cooperação Portugal/França, Proc.º 441.00, Project“COLOURCLUSTER”. J. Borges also acknowledges FCT financial support under PhD grant no. SFRH/BD/47118/2008

Influence of stoichiometry and structure on the optical properties of AlNxOy films

The AlNxOy system offers the possibility to obtain a wide range of responses, by tailoring the properties between Al, AlN and Al2O3, opening a significant number of possible applications. The aim of this work is to correlate the optical properties of AlNxOy thin films with their composition and structural features, taking as reference the binary systems AlNx and AlOy. In the AlNx system, the increase of the nitrogen content induced a wide variation in the optical properties, ranging from the typical profile of a polycrystalline Al-type film towards nearly constant reflectance values as low as 5%, as well as a smooth increase in samples transparency as the ratio N/Al approached unit. In the case of the AlOy system, the reflectance also decreased as the oxygen content increased, however the transition to transparent films (Al2O3-like) was more abrupt. The ternary system AlNxOy, revealed optical responses that ranged from a typical profile of a polycrystalline Al-type film, towards low and constant reflectance values in a wide range of x and y coefficients, ending up as semi-transparent when Al2O3-like films were formed. The unusual low optical reflectance of some films reveals some potential applications in solar power systems and sensors.This research is sponsored by FEDER funds through the program COMPETE-Programa Operacional Factores de Competitividade, by national funds through FCT,, under the projects PTDC/CTMNAN/ 112574/2009 and PEST-C-FIS/UI607/2011–2012, and Programa Pessoa 2010/2011—Cooperação Portugal/França, Proc. no 441.00, Project ‘COLOURCLUSTER’. J Borges also acknowledges FCT financial support under PhD grant no SFRH/BD/47118/200

Preparation and characterization of CrNxOy thin films: The effect of composition and structural features on the electrical behavior

Metallic oxynitrides have attracted the attention of several researchers in the last decade due to their versatile properties. Through the addition of a small amount of oxygen into a transition metal nitride film, the material’s bonding states between ionic and covalent types can be tailored, thus opening a wide range of electrical, optical, mechanical and tribological responses. Among the oxynitrides, chromium oxynitride (CrN x O y ) has many interesting applications in different technological fields. In the present work the electrical behavior of CrN x O y thin films, deposited by DC reactive magnetron sputtering, were investigated and correlated with their compositional and structural properties. The reactive gas flow, gas pressure, and target potential were monitored during the deposition in order to control the chemical composition, which depend strongly on reactive sputtering process. Depending on the particular deposition parameters that were selected, it was possible to identify three types of films with different growth conditions and physical properties. The electrical resistivity of the films, measured at room temperature, was found to depend strongly on the chemical composition of the samples

Modifying Polyester Surfaces with Incompatible Polymer Additives

Surface modification of amorphous PET in incompatible blends is demonstrated using fluorocarbon end-functional polystyrenes. Contact angles with water and decane were consistent with high levels of surface fluorocarbon, even for spin-cast films with no further processing required. Hydrophobicity and lipophobicity were further increased by annealing above the glass transition temperature. High resolution depth profiling using complementary ion beam analysis and specular neutron reflectometry has enabled accurate characterisation of the composition profile of the additive including the minimum in additive concentration found just below the surface enriched layer. This analysis quantified the very low compatibility between the modifying polymer and the amorphous PET and was consistent with the highly segregated nature of the adsorbing species and its sharp interface with the subphase. For these incompatible polymer blends, surfaces enriched with the surface active polymer could coexist at equilibrium with extremely low (∼0.4%) bulk loadings of the additive. This suggests that for thicker films at even lower additive concentrations than the minimum 1% that we studied, it may be possible to achieve efficient surface modification. However, at this concentration, the efficiency of surface modification is limited by the processing conditions. Finally we note that in higher loadings of surface active additive there is clear evidence for lateral phase separation into patterned domains of differing composition. The enhancement in surface properties is due to local reorganisation rather than bulk redistribution of the components within the film, as the composition versus depth distributions of the polymer blend components was observed to be relatively unaffected by annealing

Optimization of Au:CuO thin films by plasma surface modification for high-resolution LSPR gas sensing at room temperature

In this study, thin films composed of gold nanoparticles embedded in a copper oxide matrix (Au:CuO), manifesting Localized Surface Plasmon Resonance (LSPR) behavior, were produced by reactive DC magnetron sputtering and post-deposition in-air annealing. The effect of low-power Ar plasma etching on the surface properties of the plasmonic thin films was studied, envisaging its optimization as gas sensors. Thus, this work pretends to attain the maximum sensing response of the thin film system and to demonstrate its potential as a gas sensor. The results show that as Ar plasma treatment time increases, the host CuO matrix is etched while Au nanoparticles are uncovered, which leads to an enhancement of the sensitivity until a certain limit. Above such a time limit for plasma treatment, the CuO bonds are broken, and oxygen is removed from the film’s surface, resulting in a decrease in the gas sensing capabilities. Hence, the importance of the host matrix for the design of the LSPR sensor is also demonstrated. CuO not only provides stability and protection to the Au NPs but also promotes interactions between the thin film’s surface and the tested gases, thereby improving the nanocomposite film’s sensitivity. The optimized sensor sensitivity was estimated at 849 nm/RIU, which demonstrates that the Au-CuO thin films have the potential to be used as an LSPR platform for gas sensors.This research was sponsored by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UIDB/04650/2020 and by the project CO2Plasmon with reference EXPL/CTM-REF/0750/2021. M.P. acknowledges her Ph.D. Scholarship from FCT, with reference SFRH/BD/137076/2018. Diana I. Meira acknowledges her Ph.D. Scholarship from FCT, with reference SFRH/BD/143262/2019

The influence of Sb doping on the local structure and disorder in thermoelectric ZnO:Sb thin films

The experiment at HASYLAB/DESY was performed within the project I-20200161 EC. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01–2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2. This work was carried out in part through the use of the INL Advanced Electron Microscopy, Imaging and Spectroscopy Facility. This work (proposal ID 2018–020-022469) was carried out with the support of the Karlsruhe Nano Micro Facility (KNMFi, www.knmf.kit.edu), a Helmholtz Research Infrastructure at Karlsruhe Institute of Technology (KIT, www.kit.edu). Joana Ribeiro is grateful to the Fundação para a Ciência e Tecnologia (FCT, Portugal) for the Ph.D grant SFRH/BD/147221/2019. Filipe Correia is grateful to the FCT, Portugal, for the Ph.D. grant SFRH/BD/111720/2015. The authors also acknowledge the funding from FCT/PIDDAC through the Strategic Funds project reference UIDB/04650/2020–2023.Thermoelectric transparent ZnO:Sb thin films were deposited by magnetron sputtering, with Sb content varying between 2 and 14 at%. As evidenced by X-ray diffraction analysis, the films crystallize in the ZnO wurtzite structure for lower levels of Sb-doping, developing a degree of amorphization for higher levels of Sb-doping. Temperature-dependent (10–300 K) X-ray absorption spectroscopy studies of the produced thin films were performed at the Zn and Sb K-edges to shed light on the influence of Sb doping on the local atomic structure and disorder in the ZnO:Sb thin films. The analysis of the Zn K-edge EXAFS spectra by the reverse Monte Carlo method allowed to extract detailed and accurate structural information in terms of the radial and bond angle distribution functions. The obtained results suggest that the introduction of antimony to the ZnO matrix promotes static disorder, which leads to partial amorphization with very small crystallites (∼3 nm) for large (12–14 at%) Sb content. Rutherford backscattering spectrometry (RBS) experiments enabled the determination of the in-depth atomic composition profiles of the films. The film composition at the surfaces determined by X-ray photoelectron spectroscopy (XPS) matches that of the bulk determined by RBS, except for higher Sb-doping in ZnO films, where the concentration of oxygen determined by XPS is smaller near the surface, possibly due to the formation of oxygen vacancies that lead to an increase in electrical conductivity. Traces of Sb–Sb metal bonds were found by XPS for the sample with the highest level of Sb-doping. Time-of-flight secondary ion mass spectrometry obtained an Sb/Zn ratio that follows that of the film bulk determined by RBS, although Sb is not always homogeneous, with samples with smaller Sb content (2 and 4 at% of Sb) showing a larger Sb content closer to the film/substrate interface. From the optical transmittance and reflectance curves, it was determined that the films with the lower amount of Sb doping have larger optical band-gaps, in the range of 2.9–3.2 eV, while the partially amorphous films with higher Sb content have smaller band-gaps in the range of 1.6–2.1 eV. Albeit the short-range crystalline order (∼3 nm), the film with 12 at% of Sb has the highest absolute Seebeck coefficient (∼56 μV/K) and a corresponding thermoelectric power factor of ∼0.2 μW·K−2·m−1. --//-- This is an open access article Joana M. Ribeiro, Frederico J. Rodrigues, Filipe C. Correia, Inga Pudza, Alexei Kuzmin, Aleksandr Kalinko, Edmund Welter, Nuno P. Barradas, Eduardo Alves, Alec P. LaGrow, Oleksandr Bondarchuk, Alexander Welle, Ahmad Telfah, Carlos J. Tavares, "The influence of Sb doping on the local structure and disorder in thermoelectric ZnO:Sb thin films", Journal of Alloys and Compounds, Volume 939, 2023, 168751, ISSN 0925-8388, https://doi.org/10.1016/j.jallcom.2023.168751 published under the CC BY licence.Project I-20200161 EC; CALIPSOplus under the Grant Agreement 730872 from the EU Horizon 2020; FCT/PIDDAC through the Strategic Funds project reference UIDB/04650/2020–2023; institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01–2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2

Radiation tests on commercial instrumentation amplifiers, analog switches & DAC's

A study of several commercial instrumentation amplifiers (INA110, INA111, INA114, INA116, INA118 & INA121) under neutron and vestigial gamma radiation was done. Some parameters (Gain, input offset voltage, input bias currents) were measured on-line and bandwidth, and slew rate were determined before and after radiation. The results of the testing of some voltage references REF102 and ADR290GR and the DG412 analog switch are shown. Finally, different digital-to-analog converters were tested under radiation