The effect of gate length on SOI-MOSFETS operation

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate length is increased, the output drain current characteristics slope is increased and therefore the transistor transconductance increases. Moreover, with increasing gate length, the effect of the drain voltage on the drain current was reduced, which resulted in reduced drain induced barrier lowering.Keywords: SOI-MOSFET, silicon, transconductance, drain voltage International Journal of Natural and Applied Sciences, 6(3): 373-376, 201

Plasma waves in limited size media

In this work, an analytical derivation is applied to study electronic plasma waves in limited size plasma and a generalized formula for oscillation frequency of plasma wave is obtained in this case. The effect of thermal motion of electrons is considered and the ions are considered to be rigid. In limited size plasma the wave vector of plasma waves has discrete values and this causes the oscillation frequency to have different values proportional to the electron positions. Also, this theory is expanded for the case that a constant electric field is applied to the media and group velocity is studied for finite and infinite plasmas. This model is expanded for metal particles as micro and nano-scale rods and particles and also typical Cs plasma embedded in microns. The effect of particle size on the value of oscillation frequencies is studied and micro and nano-scale metal particles are compared. It could open new sights into properties of micro and nano-rods and nano-particles, two dimensional materials and also quark–gluon plasma physics

Electrical and optical properties of an organic semiconductor metal-free phthalocyanine (C

In a recent work we calculated some electronic properties of metal-free phthalocyanine such as band structure, density of states and energy gap. We have also presented some optical properties such as dielectric function, electrical loss function, optical conduction, absorption and refractive index, some of which have never been studied before. Calculations were performed in the framework of density functional theory (DFT), using the full-potential linearized augmented plane wave (FP-LAPW) method. This study presents the electrical gap energy of metal-free phthalocyanine to be Eg = 2.4 eV which is in good agreement with experimental data. A trap energy level is also observed. Optical band gap is about 2.48 eV with an optical trap level at 1.48 eV. In addition, we obtained the static refractive index in the x-, y- and z-directions as n0xx = 2.43, n0yy = 2.06 and n0zz = 2.32. Finally, absorption spectra display the existence of strong absorption bands at the wavelengths of 400 and 800 nm which compare favorably with experimental results

Identifikasi Bahan Tambahan Pangan Formalin pada Bakso dan Tahu yang Beredar di Kecamatan Sirampog

Peraturan Menteri Kesehatan Republik Indonesia Nomor 033 tahun 2012 tentang Bahan Tambahan Pangan mencantumkan bahwa formalin merupakan zat yang dilarang digunakan sebagai bahan tambahan pada pangan salah satunya bakso dan tahu. Penelitian bertujuan untuk mengidentifikasi dan mengetahui kadar bahan tambahan pangan formalin yang terkandung dalam bakso dan tahu yang beredar di Kecamatan Sirampog Kabupaten Brebes Provinsi Jawa Tengah. Penelitian menggunakan analisis kualitatif dengan pereaksi asam kromatrofat dan analisis kuantitatif dengan spektrofotometri UV-Vis. Analisis kualitatif dengan cara mencampurkan filtrat sampel dengan asam kromatrofat 0,5% dalam asam sulfat 60% lalu dipanaskan kemudian mengamati Perubahan warna menjadi ungu (lembayung). Analisis kuantitatif dengan cara mengamati serapannya pada panjang gelombang maksimum 590,0 nm. Hasil penelitian kandungan bahan tambahan pangan formalin pada bakso dan tahu yang beredar di Kecamatan Sirampog Kabupaten Brebes Provinsi Jawa Tengah, dari 5 sampel bakso dan 5 sampel tahu yang diberi kode A, B, C, D, dan E menunjukkan 5 sampel bakso dan 3 sampel tahu mengandung bahan tambahan pangan formalin. Dari hasil pemeriksaan spektrofotometri UV-Vis kadar bahan tambahan pangan formalin yaitu untuk sampel bakso sampel A sebanyak 55,4 µg/gram, sampel B sebanyak 59,4 µg/gram, sampel C sebanyak 50,6 µg/gram, sampel D sebanyak 52,4 µg/gram, sampel E sebanyak 49 µg/gram dan sampel tahu sampel A sebanyak 50,4 µg/gram, sampel B sebanyak 55 µg/gram, sampel E sebanyak 58,2 µg/gram

Perbandingan Monoterapi dan Politerapi Epilepsi Terhdap Kualitas Hidup Pasien Epilepsi di RSU Muhammadiyah Siti Aminah Bumiayu Tahun 2020

Epilepsi is a common disease, untreated seizures will increase the risk of death injury, cognitive and behavioral disorders and social loss. The purpose of this study was to determine the effect of epilepsy monotherapy and polytherapy on patients at RSUM Siti Aminah Bumiayu. Data collection using observasional analytic methods with cross-sectional design. The subject of the study condisted of 72 epilepsy patients at the neurological clinic of Siti Aminah Bumiayu Hospital obtained by accidental sampling technique starting from April to September 2020. Comparing monotherapy and polytherapy on the quality of life of epilepsy patients as measured by medication adherence using the Morisky Modication Adhrence Scales (MMAS) questionnaire. The result showed that the proportion of patients who received monotherapy was 72,2% and polytherapy was 27,8% while those who received epilepsy drugs phenytoin 56,9% and phenobarbital 15,3% as monotherapy and combination phenytoin+phenobarbital+caffein 27,8% as polytherapy. That there is no comparison of epilepsy monotherapy and polytherapy on the quality of life of patients with epilepsy, namely the p value is 0,998 and 0,999 (monotherapy) and 0,998 (polytherpy) where that p value is > 0,0

Study of some electronics properties of new superconductor Sr2VO3FeAs in ground state

In this paper, some electronics properties of new superconductor Sr2VO3FeAs, such as density of states, band structure, density of electron cloud and bound lengths in the ground state have been calculated. According to N(Ef) in ground state CV/T value has been estimated. The calculations were performed in the framework of density functional theory (DFT), using the full potential linearized augmented plane wave (FP-LAPW) method with the general gradient approximation (GGA)