Intrinsic Spin Hall Effect in the Two Dimensional Hole Gas

We show that two types of spin-orbit coupling in the 2 dimensional hole gas (2DHG), with and without inversion symmetry breaking, contribute to the intrinsic spin Hall effect\cite{murakami2003,sinova2003}. Furthermore, the vertex correction due to impurity scattering vanishes in both cases, in sharp contrast to the case of usual Rashba coupling in the electron band. Recently, the spin Hall effect in a hole doped $GaAs$ semiconductor has been observed experimentally by Wunderlich \emph{et al}\cite{wunderlich2004}. From the fact that the life time broadening is smaller than the spin splitting, and the fact impurity vertex corrections vanish in this system, we argue that the observed spin Hall effect should be in the intrinsic regime.Comment: Minor typos fixed, one reference adde

Influence of chirping the Raman lasers in an atom gravimeter: phase shifts due to the Raman light shift and to the finite speed of light

We present here an analysis of the influence of the frequency dependence of the Raman laser light shifts on the phase of a Raman-type atom gravimeter. Frequency chirps are applied to the Raman lasers in order to compensate gravity and ensure the resonance of the Raman pulses during the interferometer. We show that the change in the Raman light shift when this chirp is applied only to one of the two Raman lasers is enough to bias the gravity measurement by a fraction of $\mu$Gal ($1~\mu$Gal~=~$10^{-8}$~m/s$^2$). We also show that this effect is not compensated when averaging over the two directions of the Raman wavevector $k$. This thus constitutes a limit to the rejection efficiency of the $k$-reversal technique. Our analysis allows us to separate this effect from the effect of the finite speed of light, which we find in perfect agreement with expected values. This study highlights the benefit of chirping symmetrically the two Raman lasers

Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells

The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has been developed. The impact of discrete random dopants in the source and drain regions on 6T SRAM cells has been investigated for well scaled ultra thin body (UTB) SOI MOSFETs with physical channel length in the range of 10nm to 5nm

Matter-wave localization in a random potential

By numerical and variational solution of the Gross-Pitaevskii equation, we studied the localization of a noninteracting and weakly-interacting Bose-Einstein condensate (BEC) in a disordered cold atom lattice and a speckle potential. In the case of a single BEC fragment, the variational analysis produced good results. For a weakly disordered potential, the localized BECs are found to have an exponential tail as in weak Anderson localization. We also investigated the expansion of a noninteracting BEC in these potential. We find that the BEC will be locked in an appropriate localized state after an initial expansion and will execute breathing oscillation around a mean shape when a BEC at equilibrium in a harmonic trap is suddenly released into a disorder potential

The impact of random doping effects on CMOS SRAM cell

The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs. Using a statistical circuit simulation methodology, which can fully collate intrinsic parameter fluctuation information into compact model sets, the impact of random device doping on 6-T SRAM static noise margins, and read and write characteristics are investigated in detail for well-scaled 35 nm physical gate length devices. We conclude that intrinsic parameter fluctuations will become a major limitation to further conventional MOSFET SRAM scaling

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Ultra thin body (UTB) SOI MOSFETs are expected to replace conventional MOSFETs for integrated memory applications due to superior electrostatic integrity and better resistant to some of the sources of intrinsic parameter fluctuations. To fully realise the performance benefits of UTB SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuation information into the compact model is developed. The impact on 6T SRAM static noise margin characteristics of discrete random dopants in the source/drain regions and body-thickness variations has been investigated for well scaled devices with physical channel length in the range of 10nm to 5nm. A comparison with the behaviour of a 6T SRAM based on a conventional 35nm MOSFET is also presented

Nucleation of quark matter in neutron stars cores

We consider the general conditions of quark droplets formation in high density neutron matter. The growth of the quark bubble (assumed to contain a sufficiently large number of particles) can be described by means of a Fokker-Planck equation. The dynamics of the nucleation essentially depends on the physical properties of the medium it takes place. The conditions for quark bubble formation are analyzed within the frameworks of both dissipative and non-dissipative (with zero bulk and shear viscosity coefficients) approaches. The conversion time of the neutron star to a quark star is obtained as a function of the equation of state of the neutron matter and of the microscopic parameters of the quark nuclei. As an application of the obtained formalism we analyze the first order phase transition from neutron matter to quark matter in rapidly rotating neutron stars cores, triggered by the gravitational energy released during the spinning down of the neutron star. The endothermic conversion process, via gravitational energy absorption, could take place, in a very short time interval, of the order of few tens seconds, in a class of dense compact objects, with very high magnetic fields, called magnetars.Comment: 31 pages, 2 figures, to appear in Ap