222 research outputs found

    Fast determination of coarse grained cell anisotropy and size in epithelial tissue images using Fourier transform

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    Mechanical strain and stress play a major role in biological processes such as wound healing or morphogenesis. To assess this role quantitatively, fixed or live images of tissues are acquired at a cellular precision in large fields of views. To exploit these data, large numbers of cells have to be analyzed to extract cell shape anisotropy and cell size. Most frequently, this is performed through detailed individual cell contour determination, using so-called segmentation computer programs, complemented if necessary by manual detection and error corrections. However, a coarse grained and faster technique can be recommended in at least three situations. First, when detailed information on individual cell contours is not required, for instance in studies which require only coarse-grained average information on cell anisotropy. Second, as an exploratory step to determine whether full segmentation can be potentially useful. Third, when segmentation is too difficult, for instance due to poor image quality or too large a cell number. We developed a user-friendly, Fourier transform-based image analysis pipeline. It is fast (typically 10410^4 cells per minute with a current laptop computer) and suitable for time, space or ensemble averages. We validate it on one set of artificial images and on two sets of fully segmented images, one from a Drosophila pupa and the other from a chicken embryo; the pipeline results are robust. Perspectives include \textit{in vitro} tissues, non-biological cellular patterns such as foams, and xyzxyz stacks.Comment: 13 pages; 9 figure

    A migrating epithelial monolayer flows like a Maxwell viscoelastic liquid

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    We perform a bidimensional Stokes experiment in an active cellular material: an autonomously migrating monolayer of Madin-Darby Canine Kidney (MDCK) epithelial cells flows around a circular obstacle within a long and narrow channel, involving an interplay between cell shape changes and neighbour rearrangements. Based on image analysis of tissue flow and coarse-grained cell anisotropy, we determine the tissue strain rate, cell deformation and rearrangement rate fields, which are spatially heterogeneous. We find that the cell deformation and rearrangement rate fields correlate strongly, which is compatible with a Maxwell viscoelastic liquid behaviour (and not with a Kelvin-Voigt viscoelastic solid behaviour). The value of the associated relaxation time is measured as τ=70±15\tau = 70 \pm 15~min, is observed to be independent of obstacle size and division rate, and is increased by inhibiting myosin activity. In this experiment, the monolayer behaves as a flowing material with a Weissenberg number close to one which shows that both elastic and viscous effects can have comparable contributions in the process of collective cell migration.Comment: 17 pages, 15 figure

    Invariant vector fields and the prolongation method for supersymmetric quantum systems

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    The kinematical and dynamical symmetries of equations describing the time evolution of quantum systems like the supersymmetric harmonic oscillator in one space dimension and the interaction of a non-relativistic spin one-half particle in a constant magnetic field are reviewed from the point of view of the vector field prolongation method. Generators of supersymmetries are then introduced so that we get Lie superalgebras of symmetries and supersymmetries. This approach does not require the introduction of Grassmann valued differential equations but a specific matrix realization and the concept of dynamical symmetry. The Jaynes-Cummings model and supersymmetric generalizations are then studied. We show how it is closely related to the preceding models. Lie algebras of symmetries and supersymmetries are also obtained.Comment: 37 pages, 7 table

    The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

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    We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011

    Incorporating risk in field services operational planning process

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    © Springer Nature Switzerland AG 2018. This paper presents a model for the risk minimisation objective in the Stochastic Vehicle Routing Problem (SVRP). In the studied variant of SVRP, service times and travel times are subject to stochastic events, and a time window is constraining the start time for service task. Required skill levels and task priorities increase the complexity of this problem. Most previous research uses a chance-constrained approach to the problem and their objectives are related to traditional routing costs whilst a different approach was taken in this paper. The risk of missing a task is defined as the probability that the technician assigned to the task arrives at the customer site later than the time window. The problem studied in this paper is to generate a schedule that minimises the maximum of risks and sum of risks over all the tasks considering the effect of skill levels and task priorities. The stochastic duration of each task is supposed to follow a known normal distribution. However, the distribution of the start time of the service at a customer site will not be normally distributed due to time window constraints. A method is proposed and tested to approximate the start time distribution as normal. Moreover, a linear model can be obtained assuming identical variance of task durations. Additionally Simulated Annealing method was applied to solve the problem. Results of this work have been applied to an industrial case of SVRP where field engineering individuals drive to customer sites to provide time-constrained services. This original approach gives a robust schedule and allows organisations to pay more attention to increasing customer satisfaction and become more competitive in the market

    Random Convex Hulls and Extreme Value Statistics

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    In this paper we study the statistical properties of convex hulls of NN random points in a plane chosen according to a given distribution. The points may be chosen independently or they may be correlated. After a non-exhaustive survey of the somewhat sporadic literature and diverse methods used in the random convex hull problem, we present a unifying approach, based on the notion of support function of a closed curve and the associated Cauchy's formulae, that allows us to compute exactly the mean perimeter and the mean area enclosed by the convex polygon both in case of independent as well as correlated points. Our method demonstrates a beautiful link between the random convex hull problem and the subject of extreme value statistics. As an example of correlated points, we study here in detail the case when the points represent the vertices of nn independent random walks. In the continuum time limit this reduces to nn independent planar Brownian trajectories for which we compute exactly, for all nn, the mean perimeter and the mean area of their global convex hull. Our results have relevant applications in ecology in estimating the home range of a herd of animals. Some of these results were announced recently in a short communication [Phys. Rev. Lett. {\bf 103}, 140602 (2009)].Comment: 61 pages (pedagogical review); invited contribution to the special issue of J. Stat. Phys. celebrating the 50 years of Yeshiba/Rutgers meeting

    Channel Length Scaling of MoS2 MOSFETs

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    In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the device with 100 nm channel length (Lch) fabricated on a 5 nm thick MoS2 2D crystal even when using 300 nm thick SiO2 as gate dielectric, and has a current on/off ratio up to ~109. We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS2 transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS2 interface, where a fully transparent contact is needed to achieve a high-performance short channel device.Comment: 22 pages, 6 figures; ACS Nano, ASAP, 201

    Integrated Circuits Based on Bilayer MoS

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    Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.United States. Office of Naval Research (Young Investigator Program)Microelectronics Advanced Research Corporation (MARCO) (Focus Center for Materials, Structure and Device (MARCO MSD))National Science Foundation (U.S.) (NSF DMR 0845358)United States. Army Research Offic
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