Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

Quaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample. (C) 2012 American Institute of Physics. (doi:10.1063/1.3676437

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering

Description of the Vitis vinifera L. phenotypic variability in eno-carpological traits by a Euro-Asiatic collaborative network among ampelographic collections

The grapevine intra-specific variability captured an increasing interest during the last decades, as demonstrated by the number of recently funded European projects focused on the grapevine biodiversity preservation. However, nowadays, crop plants are mainly characterized by genotyping methods. The present work summarizes the phenotype data collected among 20 ampelographic collections spread in 15 countries, covering mostly of the viticultural areas in the Euro-Asiatic range: from Portugal to Armenia and from Cyprus to Luxembourg. Together with agro-climatic characterization of the experimental site, in two years, about 2400 accessions were described, following a common experimental protocol mainly focused on the carpological and oenological traits, obtaining a general overview of the distribution of the considered phenotypic traits in the cultivated Vitis vinifera species. The most replicated cultivars were selected and, for the subset of these reference cultivars, their behavior in the different environmental conditions over sites and years was described by ANOVA methods

Description of the vitis vinifera L. Phenotypic variability in eno-carpological traits by a Euro-Asiatic collaborative network among ampelographic collections

The grapevine intra-specific variability captured an increasing interest during the last decades, as demonstrated by the number of recently funded European projects focused on the grapevine biodiversity preservation. However, nowadays, crop plants are mainly characterized by genotyping methods. The present work summarizes the phenotype data collected among 20 ampelographic collections spread over 15 countries, covering most of the viticultural areas in the Euro-Asiatic region: from Portugal to Armenia and from Cyprus to Luxembourg. Together with agro-climatic characterization of the experimental site, over two years about 2,400 accessions were described. A common experimental protocol mainly focused on the carpological and oe-nological traits was followed, obtaining a general overview of the distribution of the considered phenotypic traits in the cultivated Vitis vinifera species. The most replicated cultivars were selected and, for the subset of these reference cultivars, their behavior in the different environmental conditions over sites and years was described by ANOVA methods

Structural properties of porous media

Structural properties of porous silicon are investigated theoretically. Distribution functions of pore sizes were introduced and expressions for the surface and volume porosities of the material are obtained. The suggested models allow one to calculate the specific surface area and its dependence on porosity. A model for macroporous silicon with a nanoporous layer on the pore walls is suggested also. An attempt is done to describe analytically the observed phenomenon of the specific surface area decrease at higher porosities

Conductivity mechanisms of porous silicon

In the present paper the peculiarities of conductivity of porous silicon are studied. For the first time an attempt is made to describe analytically the dependence of porous silicon conductivity on material porosity. It is found that the conductivity is mainly crystalline for porosities much lower than the percolation threshold at 57%, while a fractal behavior is observed at porosities near percolation threshold. For higher values of porosities, the conductivity turns smoothly into a quasi-one-dimensional hopping. The reduction of the electrical current flow channels dimension from 3 to 1 for lower temperatures, described by the Mott law for amorphous semiconductors, occurs in porous silicon with increasing porosity