Characterisation of Medipix3 Silicon Detectors in a Charged-Particle Beam

While designed primarily for X-ray imaging applications, the Medipix3 ASIC can also be used for charged-particle tracking. In this work, results from a beam test at the CERN SPS with irradiated and non-irradiated sensors are presented and shown to be in agreement with simulation, demonstrating the suitability of the Medipix3 ASIC as a tool for characterising pixel sensors.Comment: 16 pages, 13 figure

Identification of particles with Lorentz factor up to 10410^{4} with Transition Radiation Detectors based on micro-strip silicon detectors

This work is dedicated to the study of a technique for hadron identification in the TeV momentum range, based on the simultaneous measurement of the energies and of the emission angles of the Transition Radiation (TR) X-rays with respect to the radiating particles. A detector setup has been built and tested with particles in a wide range of Lorentz factors (from about $10^3$ to about $4 \times 10^4$ crossing different types of radiators. The measured double-differential (in energy and angle) spectra of the TR photons are in a reasonably good agreement with TR simulation predictions.Comment: 31 pages, 12 figures, paper published on Nuclear Instruments & Methods

Review of hybrid pixel detector readout ASICs for spectroscopic X-ray imaging

Semiconductor detector readout chips with pulse processing electronics have made possible spectroscopic X-ray imaging, bringing an improvement in the overall image quality and, in the case of medical imaging, a reduction in the X-ray dose delivered to the patient. In this contribution we review the state of the art in semiconductor-detector readout ASICs for spectroscopic X-ray imaging with emphasis on hybrid pixel detector technology. We discuss how some of the key challenges of the technology (such as dealing with high fluxes, maintaining spectral fidelity, power consumption density) are addressed by the various ASICs. In order to understand the fundamental limits of the technology, the physics of the interaction of radiation with the semiconductor detector and the process of signal induction in the input electrodes of the readout circuit are described. Simulations of the process of signal induction are presented that reveal the importance of making use of the small pixel effect to minimize the impact of the slow motion of holes and hole trapping in the induced signal in high-Z sensor materials. This can contribute to preserve fidelity in the measured spectrum with relatively short values of the shaper peaking time. Simulations also show, on the other hand, the distortion in the energy spectrum due to charge sharing and fluorescence photons when the pixel pitch is decreased. However, using recent measurements from the Medipix3 ASIC, we demonstrate that the spectroscopic information contained in the incoming photon beam can be recovered by the implementation in hardware of an algorithm whereby the signal from a single photon is reconstructed and allocated to the pixel with the largest deposition

Infrastructure for Detector Research and Development towards the International Linear Collider

The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.Comment: 54 pages, 48 picture

Registration of the transition radiation with GaAs detector: Data/MC comparison

New developments of pixel detectors based on GaAs sensors offer effective registration of the transition radiation (TR) X-rays and perform simultaneous measurements of their energies and emission angles. This unique feature opens new possibilities for particle identification on the basis of maximum available information about generated TR photons. Results of studies of TR energy-Angular distributions using a 500 |j.m thick GaAs sensor attached to a Timepix3 chip are presented. Measurements, analysis techniques and a comparison with Monte Carlo (MC) simulations are described and discussed

Detector Technologies for CLIC

The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.Comment: 152 pages, 116 figures; published as CERN Yellow Report Monograph Vol. 1/2019; corresponding editors: Dominik Dannheim, Katja Kr\"uger, Aharon Levy, Andreas N\"urnberg, Eva Sickin

Towards a new generation of pixel detector readout chips

The Medipix3 Collaboration has broken new ground in spectroscopic X-ray imaging and in single particle detection and tracking. This paper will review briefly the performance and limitations of the present generation of pixel detector readout chips developed by the Collaboration. Through Silicon Via technology has the potential to provide a significant improvement in the tile-ability and more flexibility in the choice of readout architecture. This has been explored in the context of 3 projects with CEA-LETI using Medipix3 and Timepix3 wafers. The next generation of chips will aim to provide improved spectroscopic imaging performance at rates compatible with human CT. It will also aim to provide full spectroscopic images with unprecedented energy and spatial resolution. Some of the opportunities and challenges posed by moving to a more dense CMOS process will be discussed

Timepix4, a large area pixel detector readout chip which can be tiled on 4 sides providing sub-200 ps timestamp binning

Timepix4 is a 24.7 × 30.0 mm$^{2}$ hybrid pixel detector readout ASIC which has been designed to permit detector tiling on 4 sides. It consists of 448 × 512 pixels which can be bump bonded to a sensor with square pixels at a pitch of 55 µm. Like its predecessor, Timepix3, it can operate in data driven mode sending out information (Time of Arrival, ToA and Time over Threshold, ToT) only when a pixel has a hit above a pre-defined and programmable threshold. In this mode hits can be tagged to a time bin of <200 ps and Timepix4 can record hits correctly at incoming rates of ∼3.6 MHz/mm$^{2}$/s. In photon counting (or frame-based) mode it can count incoming hits at rates of up to 5 GHz/mm$^{2}$/s. In both modes data is output via between 2 and 16 serializers each running at a programmable data bandwidth of between 40 Mbps and 10 Gbps. The specifications, architecture and circuit implementation are described along with first electrical measurements and measurements with radioactive sources. In photon counting mode X-ray images have been taken at a threshold of 650 e$^{−}$ (with <10 masked pixels). In data driven mode images were taken of ToA/ToT data using a $^{90}$Sr source at a threshold of 800 e$^{−}$ (with ∼120 masked pixels)