Atom Probe Tomography Characterization of Thin Copper Layers on Aluminum Deposited by Galvanic Displacement

″Ultrathin″ metallization layers on the order of nanometers in thickness are increasingly used in semiconductor interconnects and other nanostructures. Aqueous deposition methods are attractive methods to produce such layers due to their low cost, but formation of ultrathin layers has proven challenging, particularly on oxide-coated substrates. This work focused on the formation of thin copper layers on aluminum, by galvanic displacement from alkaline aqueous solutions. Analysis by atom probe tomography (APT) showed that continuous copper films of approximately 1 nm thickness were formed, apparently the first demonstration of deposition of ultrathin metal layers on oxidized substrates from aqueous solutions. The APT reconstructions indicate that deposited copper replaced a portion of the surface oxide film on aluminum. The results are consistent with mechanisms in which surface hydride species on aluminum mediate deposition, either by directly reducing cupric ions or by inducing electronic conduction in the oxide, thus enabling cupric ion reduction by Al metal

Copper Layers Deposited on Aluminum by Galvanic Displacement

Metallization layers nanometers to tens of nanometers thick are desirable for semiconductor interconnects, among other technologically relevant nanostructures. Whereas aqueous deposition of such films is economically attractive, fabrication of continuous layers is particularly challenging on oxidized substrates used in many applications. Here it is demonstrated that galvanic displacement can deposit thin adherent copper layers on aluminum foils and thin films from alkaline copper sulfate baths. According to scanning electron microscopy and quartz crystal microbalance measurements, the use of relatively low CuSO4 concentrations produced films composed of copper nanoparticles overlying a uniform continuous copper layer on the order of nanometers in thickness. It seems that there are no precedents for such thin layers formed by aqueous deposition on oxidized metals. The thin copper layers are explained by a mechanism in which copper ions are reduced by surface aluminum hydride on Al during alkaline dissolution

Oxidation of Zircaloy Fuel Cladding in Water-Cooled Nuclear Reactors

Our work involved the continued development of the theory of passivity and passivity breakdown, in the form of the Point Defect Model, with emphasis on zirconium and zirconium alloys in reactor coolant environments, the measurement of critically-important parameters, and the development of a code that can be used by reactor operators to actively manage the accumulation of corrosion damage to the fuel cladding and other components in the heat transport circuits in both BWRs and PWRs. In addition, the modified boiling crevice model has been further developed to describe the accumulation of solutes in porous deposits (CRUD) on fuel under boiling (BWRs) and nucleate boiling (PWRs) conditions, in order to accurately describe the environment that is contact with the Zircaloy cladding. In the current report, we have derived expressions for the total steady-state current density and the partial anodic and cathodic current densities to establish a deterministic basis for describing Zircaloy oxidation. The models are “deterministic” because the relevant natural laws are satisfied explicitly, most importantly the conversation of mass and charge and the equivalence of mass and charge (Faraday’s law). Cathodic reactions (oxygen reduction and hydrogen evolution) are also included in the models, because there is evidence that they control the rate of the overall passive film formation process. Under open circuit conditions, the cathodic reactions, which must occur at the same rate as the zirconium oxidation reaction, are instrumental in determining the corrosion potential and hence the thickness of the barrier and outer layers of the passive film. Controlled hydrodynamic methods have been used to measure important parameters in the modified Point Defect Model (PDM), which is now being used to describe the growth and breakdown of the passive film on zirconium and on Zircaloy fuel sheathing in BWRs and PWRs coolant environments. The modified PDMs recognize the existence of a thick oxide outer layer over a thin barrier layer. From thermodynamic analysis, it is postulated that a hydride barrier layer forms under PWR coolant conditions whereas an oxide barrier layer forms under BWR primary coolant conditions. Thus, the introduction of hydrogen into the solution lowers the corrosion potential of zirconium to the extent that the formation of ZrH2 is predicted to be spontaneous rather than the ZrO2. Mott-Schottky analysis shows that the passive film formed on zirconium is n-type, which is consistent with the PDM, corresponding to a preponderance of oxygen/hydrogen vacancies and/or zirconium interstitials in the barrier layer. The model parameter values were extracted from electrochemical impedance spectroscopic data for zirconium in high temperature, de-aerated and hydrogenated environments by optimization. The results indicate that the corrosion resistance of zirconium is dominated by the porosity and thickness of the outer layer for both cases. The impedance model based on the PDM provides a good account of the growth of the bi-layer passive films described above, and the extracted model parameter values might be used, for example, for predicting the accumulation of general corrosion damage to Zircaloy fuel sheath in BWR and PWR operating environments. Transients in current density and film thickness for passive film formation on zirconium in dearated and hydrogenated coolant conditions have confirmed that the rate law afforded by the Point Defect Model (PDM) adequately describes the growth and thinning of the passive film. The experimental results demonstrate that the kinetics of oxygen or hydrogen vacancy generation at the metal/film interface control the rate of film growth, when the potential is displaced in the positive direction, whereas the kinetics of dissolution of the barrier layer at the barrier layer/solution interface control the rate of passive film thinning when the potential is stepped in the negative direction. In addition, the effects of second phase particles (SPPs) on the electrochemistry of passive zirconium in the hydrogenated, high temperature aqueous solutions were examined by using different heat-treated Zircaloy-4 samples; i.e., as-received, -quenched, and -annealed. The average size of the second phase particles in the Zircaloy-4 samples was in the sequence of -quenched < -annealed < as-received, with the reverse sequence being observed in the areal density. Electrochemical studies show that the size and density of the second phase particles are the determining factors of the electrochemical properties of the passive films. The second phase particles may cause short circuits in the electrical path across the passive film, which would explain the effect of the size and the density of the SPPs, and hence heat treatment, on the corrosion properties of passive Zircaloy-4

Global urban environmental change drives adaptation in white clover

Urbanization transforms environments in ways that alter biological evolution. We examined whether urban environmental change drives parallel evolution by sampling 110,019 white clover plants from 6169 populations in 160 cities globally. Plants were assayed for a Mendelian antiherbivore defense that also affects tolerance to abiotic stressors. Urban-rural gradients were associated with the evolution of clines in defense in 47% of cities throughout the world. Variation in the strength of clines was explained by environmental changes in drought stress and vegetation cover that varied among cities. Sequencing 2074 genomes from 26 cities revealed that the evolution of urban-rural clines was best explained by adaptive evolution, but the degree of parallel adaptation varied among cities. Our results demonstrate that urbanization leads to adaptation at a global scale

Atom Probe Tomography Characterization of Thin Copper Layers on Aluminum Deposited by Galvanic Displacement

″Ultrathin″ metallization layers on the order of nanometers in thickness are increasingly used in semiconductor interconnects and other nanostructures. Aqueous deposition methods are attractive methods to produce such layers due to their low cost, but formation of ultrathin layers has proven challenging, particularly on oxide-coated substrates. This work focused on the formation of thin copper layers on aluminum, by galvanic displacement from alkaline aqueous solutions. Analysis by atom probe tomography (APT) showed that continuous copper films of approximately 1 nm thickness were formed, apparently the first demonstration of deposition of ultrathin metal layers on oxidized substrates from aqueous solutions. The APT reconstructions indicate that deposited copper replaced a portion of the surface oxide film on aluminum. The results are consistent with mechanisms in which surface hydride species on aluminum mediate deposition, either by directly reducing cupric ions or by inducing electronic conduction in the oxide, thus enabling cupric ion reduction by Al metal.Reprinted with permission from Langmuir 28 (2012): 1673–1677, doi:10.1021/la204156d. Copyright 2012 American Chemical Society.</p

Atom Probe Tomography Characterization of Thin Copper Layers on Aluminum Deposited by Galvanic Displacement

″Ultrathin″ metallization layers on the order of nanometers in thickness are increasingly used in semiconductor interconnects and other nanostructures. Aqueous deposition methods are attractive methods to produce such layers due to their low cost, but formation of ultrathin layers has proven challenging, particularly on oxide-coated substrates. This work focused on the formation of thin copper layers on aluminum, by galvanic displacement from alkaline aqueous solutions. Analysis by atom probe tomography (APT) showed that continuous copper films of approximately 1 nm thickness were formed, apparently the first demonstration of deposition of ultrathin metal layers on oxidized substrates from aqueous solutions. The APT reconstructions indicate that deposited copper replaced a portion of the surface oxide film on aluminum. The results are consistent with mechanisms in which surface hydride species on aluminum mediate deposition, either by directly reducing cupric ions or by inducing electronic conduction in the oxide, thus enabling cupric ion reduction by Al metal

Copper Layers Deposited on Aluminum by Galvanic Displacement

Metallization layers nanometers to tens of nanometers thick are desirable for semiconductor interconnects, among other technologically relevant nanostructures. Whereas aqueous deposition of such films is economically attractive, fabrication of continuous layers is particularly challenging on oxidized substrates used in many applications. Here it is demonstrated that galvanic displacement can deposit thin adherent copper layers on aluminum foils and thin films from alkaline copper sulfate baths. According to scanning electron microscopy and quartz crystal microbalance measurements, the use of relatively low CuSO4 concentrations produced films composed of copper nanoparticles overlying a uniform continuous copper layer on the order of nanometers in thickness. It seems that there are no precedents for such thin layers formed by aqueous deposition on oxidized metals. The thin copper layers are explained by a mechanism in which copper ions are reduced by surface aluminum hydride on Al during alkaline dissolution.Reprinted with permission from Journal of Physical Chemistry C 115 (2011): 22354–22359, doi:10.1021/jp2054266. Copyright 2011 American Chemical Society.</p

Resting-state MRI functional connectivity as a neural correlate of multidomain lifestyle adherence in older adults at risk for Alzheimer’s disease

Abstract Prior research has demonstrated the importance of a healthy lifestyle to protect brain health and diminish dementia risk in later life. While a multidomain lifestyle provides an ecological perspective to voluntary engagement, its association with brain health is still under-investigated. Therefore, understanding the neural mechanisms underlying multidomain lifestyle engagement, particularly in older adults at risk for Alzheimer’s disease (AD), gives valuable insights into providing lifestyle advice and intervention for those in need. The current study included 139 healthy older adults with familial risk for AD from the Prevent-AD longitudinal aging cohort. Self-reported exercise engagement, cognitive activity engagement, healthy diet adherence, and social activity engagement were included to examine potential phenotypes of an individual’s lifestyle adherence. Two adherence profiles were discovered using data-driven clustering methodology [i.e., Adherence to healthy lifestyle (AL) group and Non-adherence to healthy lifestyle group]. Resting-state functional connectivity matrices and grey matter brain features obtained from magnetic resonance imaging were used to classify the two groups using a support vector machine (SVM). The SVM classifier was 75% accurate in separating groups. The features that show consistently high importance to the classification model were functional connectivity mainly between nodes located in different prior-defined functional networks. Most nodes were located in the default mode network, dorsal attention network, and visual network. Our results provide preliminary evidence of neurobiological characteristics underlying multidomain healthy lifestyle choices