85 research outputs found

    Industrial relations and workers' participation issues : a case study of the Greek telecommunications sector.

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    Available from British Library Document Supply Centre- DSC:D171670 / BLDSC - British Library Document Supply CentreSIGLEGBUnited Kingdo

    Social media and politics: contestation, mediation and civil society

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    In this special issue we consider various perspectives and ideas underlying the current ever-changing political and digital environments. There have been a substantial number of theories, coupled by empirical research over the past few years, on the nature of political behavior with respect to the increased use of the Internet. The main aim of this edition is to explore a few aspects of ‘digital politics’ and what they may mean for contemporary democratic culture. This paper synthesizes and reflects upon concepts presented in the following articles and discusses some recent developments and debates related to the dynamics of the online world.In this special issue we consider various perspectives and ideas underlying the current ever-changing political and digital environments. There have been a substantial number of theories, coupled by empirical research over the past few years, on the nature of political behavior with respect to the increased use of the Internet. The main aim of this edition is to explore a few aspects of ‘digital politics’ and what they may mean for contemporary democratic culture. This paper synthesizes and reflects upon concepts presented in the following articles and discusses some recent developments and debates related to the dynamics of the online world

    Social media and politics: contestation, mediation and civil society

    Get PDF
    In this special issue we consider various perspectives and ideas underlying the current ever-changing political and digital environments. There have been a substantial number of theories, coupled by empirical research over the past few years, on the nature of political behavior with respect to the increased use of the Internet. The main aim of this edition is to explore a few aspects of ‘digital politics’ and what they may mean for contemporary democratic culture. This paper synthesizes and reflects upon concepts presented in the following articles and discusses some recent developments and debates related to the dynamics of the online world.In this special issue we consider various perspectives and ideas underlying the current ever-changing political and digital environments. There have been a substantial number of theories, coupled by empirical research over the past few years, on the nature of political behavior with respect to the increased use of the Internet. The main aim of this edition is to explore a few aspects of ‘digital politics’ and what they may mean for contemporary democratic culture. This paper synthesizes and reflects upon concepts presented in the following articles and discusses some recent developments and debates related to the dynamics of the online world

    Solution-processed metal oxide dielectrics and semiconductors for thin film transistor applications

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    Transparent thin film transistors (TFTs) have been the subject of extensive scientific research over the last couple of decades, for applications in displays and imaging, as their implementation in active-matrix liquid crystal displays backplanes is expected to improve their performance in terms of switching times and stability. To this end, several material systems have emerged as contenders to address this need for a high performance, low power, large-area electronics i.e. thin film silicon, organic semiconductors and metal oxides. The electronic limitations of thin film silicon are well documented, and although organic semiconductors have seen significant improvements in recent years, their persistent low mobility and instability means that they are unlikely to progress beyond niche applications. This thesis is focused on the investigation of the physical properties of metal oxides and their implementation in TFTs. Metal oxide based TFTs were fabricated by spray pyrolysis, a simple and large-area-compatible deposition technique. More precisely, the implementation of titanium-aluminate and niobium-aluminate both wide band gap and high-k gate dielectric metal oxides in solution processed ZnO-based TFTs was studied and high performance, low operational voltage devices were fabricated. ZnO-based TFTs employing stoichiometric Al2O3-TiO2 (k~13, Eg~4.5 eV) or Nb2O5-Al2O3 (k~13.5, Eg~5.1 eV) as gate dielectric exhibited low leakage currents, high on-off current modulation ratios, high field-effect mobilities and low subthreshold voltage swings. Furthermore, the implementation of solution-processed crystalline indium-zinc oxide (c-IZO) as active channel material in TFTs was equally investigated and high-performance c-IZO-based TFTs employing Al2O3 were fabricated. The effects of metal cation doping in c-IZO matrix were investigated in particular, and c-IZO:X (X:Ga,Y,Zr,Nb) based TFTs were fabricated and their properties were assessed for each dopant. Amongst them, Yttrium doped c-IZO (c-YIZO)-based TFTs exhibited the best performance in terms of low off-state currents, high field-effect mobilities and low subthreshold voltage swings

    Persisting digital society territorial divides

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    The ‘Europe 2020 Strategy’ was issued in 2010 by the European Commission. This document constitutes a growth scheme for the decade 2010-2020 that aims to help the European Union to emerge from the current crisis through the so-called smart, sustainable and inclusive dimensions of growth. In this context, the basic aim of the SIESTA (“Spatial Indicators for a ‘Europe 2020 Strategy’ Territorial Analysis”) Project has been to illustrate the territorial dimension of the ‘Europe 2020 Strategy’. In other words, to show how this document acts territorially, particularly at the regional scale, but, when possible, also at the urban level. The SIESTA Project has been funded by ESPON (“European Observation Network for Territorial Development and Cohesion”), a European Commission Programme whose mission is to support policy development in relation to the aim of territorial cohesion and a harmonious development of the European territory. This book includes most of the main findings and conclusions obtained through research of the SIESTA Project. The contents were presented and discussed as keynote addresses or communications at the SIESTA Final Conference held in Santiago de Compostela, Galicia, on 4-5 April 2013

    Preliminary TL and OSL investigations of obsidian samples

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    Obsidian is a volcaniclastic mineral extremely hard to break, which was used in prehistoric Greece (and elsewhere in the World), in order to provide tools, weapons, knives and arrowheads. The present work aims to characterize this extremely precious tool stone by using both thermoluminescence (TL) and optically stimulated luminescence (OSL) techniques and investigate its potential use for luminescence dating purposes. Basic TL and OSL properties, such as TL and OSL thermal and optical stability, repeatability, TL and LM-OSL glow curve shape and mainly the linearity of the TL and OSL signals as a function of beta dose were investigated. Artificially irradiated samples indicate all promising luminescence features, such as the 110 degrees C TL peak and dose response sub-linearity for intermediate doses, quick and effective bleaching all over the entire TL glow curve, along with quite linear CW-OSL dose response for doses larger than 5 Gy. The lack of predose sensitisation indicates the suitability of the material for single aliquot measurements. Furthermore, several features provide indications that the signal does not relate to quartz, but in fact to other silicates. Unfortunately, both lack of bleaching ability for NIL signal, along with a peculiar shape of NOSL, provide major difficulties in dating applications.Publisher's Versio

    TL and OSL response of turquoise for dosimetric application

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    Turquoise is one of the amongst first gem stones used in jewelry and possessing cultural value since 2000 BC (at least). This work attempts characterize this stone scientifically using both thermally (TL) and optically stimulated luminescence (OSL) techniques. The experimental investigation included 1) the study of the natural TL and OSL signals, 2) the reproducibility of TL sensitivity over repeated irradiation and TL readout cycles, 3) dependence of sensitivity on annealing temperatures and 4) the TL and OSL dose response curves. The potential use of the TL and OSL techniques in determination of provenance, accidental dosimetry and probably to authenticity and dating purposes are then discussed.Publisher's Versio

    Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

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    We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared to that of In-O, and the consequent oxygen vacancy suppression. However the positive bias stability results in a reduced accumulation of electrons in the back channel due to atmospheric oxygen absorption. The results presented in this report demonstrate the potential for stable, low operational voltage, high performance metal oxide-based TFTs employing gate dielectrics also grown from solutions, at low manufacturing cost
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