A RANDOMISED CONTROL STUDY TO COMPARE THE EFFICACY OF CEFUROXIME, CLARITHROMYCIN, AND LEVOFLOXACIN IN THE MANAGEMENT OF PAEDIATRIC UPPER RESPIRATORY TRACT INFECTION

Background: The upper respiratory infections cause considerable morbidity mainly in children due to the fact that they mainly affect children. Accordingly, a study was conducted on antibiotics to compare the effectiveness of clarithromycin, cefuroxime, and levofloxacin for treating upper respiratory tract infections (URTI) in children. Methods: A prospective observational study for a period of 6 months was conducted in the pediatrics department of RVM hospital. Outpatients under the age of 14 years given antibiotics for the treatment of URTI were included in the study. A total of 99 study subjects were included in the study, divided into three groups each containing 33 sample sizes (clarithromycin, cefuroxime, and levofloxacin). Patient data was collected using a form and verbal consent was obtained from patients/patient representatives, and drugs were given using the lottery method. Follow-up was done and noted for the 3rd, 5th, 7th day through telephonic calls, and the collected data were evaluated using statistical analysis. Results: Pool data from 99 patients shows that many patients belong to 0–5 years age groups (age distribution), and males were more than female (gender distribution). Clarithromycin (cure rate 3 days) and cefuroxime (cure rate 5 days) showed an equal rate of cure percentage (94%), while levofloxacin for 3–5 days with a 3% failure rate. A significant difference of p<0.05 (p=0.000) was observed and no adverse events were noted. Conclusion: The study findings showed, out of 3 drugs, clarithromycin and cefuroxime showed an equal efficacy rate of 94%, but clarithromycin showed shorter duration of outcome, i.e., 3 days. Hence, clarithromycin is effective than the other two drugs in the treatment of URTI

Analyzing the Structure and Curriculum of English-Taught Master's Programs in Sustainability at Finnish Universities

Sustainability has emerged as a critical field of study in response to global environmental and societal challenges. With the increasing urgency to address global sustainability challenges, higher education plays a crucial role in preparing students with the necessary knowledge, skills, and attitudes to become active contributors to attain sustainable development goals for a sustainable future. English-Taught Master's Programs in Sustainability offered by Finnish universities are examined, and their structure and curriculum are thoroughly analyzed using inductive approach. The collected data is organized according to key themes and sub-themes, shedding light on the specific areas of focus within these programs. The findings reveal a diverse range of themes and sub-themes in the analyzed programs, including sustainability management, circular economy, renewable energy, leadership, life cycle assessment, business, digitization, culture, and corporate social responsibility. The curriculum encompasses a comprehensive understanding of sustainability, combining theoretical knowledge with practical skills necessary for addressing sustainability challenges in various sectors. The findings of this study with the literature on sustainability, understanding UNESCO's sustainable development goals, and teaching pedagogies contribute recommendations for master’s degree program in English language, suggestions on what can be developed, areas to focus were discovered and inclusion of courses in current offerings and conclusions were created

Scholars Journal of Medical Case Reports ISSN 2347-9507 (Print) Sclerosing Epithelioid Fibrosarcoma: A Case Report

Abstract: Sclerosing epithelioid fibrosarcoma is an unusual variant of fibrosarcoma composed of bland epithelioid cells deposited in a densely hyalinised collageneous matrix.A 41 year male patient admitted with complains of pain in right hip since 6 months. He was a known case of fibrosarcoma (soft tissue) operated 3 years ago. On examination, old scar on medial aspect of right thigh was seen. Tenderness was present over right greater trochanter. A biopsy was performed which was diagnosed as Sclerosing epithelioidfibrosarcoma.Sclerosing epithelioidfibrosarcoma is a rare, slow growing, sarcoma of deep soft tissue with bland epithelioid tumor cells in nests and cords set in hyalinized fibrous stroma. As it is a clinically aggressive but histologically low-grade sarcoma with unsatisfactory treatment results and also has a high recurrence rate with high metastatic potential, it is important to consider this rare entity as a possible differential diagnosis in all suspicious soft tissue sarcomas

A comparison of 4MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs

N-channel depletion MOSFETs were irradiated with 4MeV Proton and Co-60 gamma radiation in the dose range of 100krad(Si) to 100Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (μ), leakage current (IL) and drain saturation current (ID Sat) were studied as a function of dose. A considerable increase in ΔNit and ΔNot and decrease in Vth, gm, μ, and ID Sat was observed after irradiation. The results of 4MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation

An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors

The NPN transistors were irradiated with 80 MeV Nitrogen ion in the dose range from 100 krad(Si) to 100 Mrad(Si). The different electrical characteristics like Gummel characteristics, current gain(hFE) and output characteristics (IC-VCE) were studied before and after irradiation. After nitrogen ion irradiation a significant increase has been observed in the collector current (IC) along with increase in base current (IB). The hFE of the transistors decreased drastically after ion irradiation. Moreover, the output characteristics of the irradiated transistor show that the collector current (IC) in the saturation region (ICsat) decrease with increase in the ion dose

An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors

The NPN transistors were irradiated with 80 MeV Nitrogen ion in the dose range from 100 krad(Si) to 100 Mrad(Si). The different electrical characteristics like Gummel characteristics, current gain(hFE) and output characteristics (IC-VCE) were studied before and after irradiation. After nitrogen ion irradiation a significant increase has been observed in the collector current (IC) along with increase in base current (IB). The hFE of the transistors decreased drastically after ion irradiation. Moreover, the output characteristics of the irradiated transistor show that the collector current (IC) in the saturation region (ICsat) decrease with increase in the ion dose

Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors

ABSTRACTThe total dose effects of 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100 krad to 100 Mrad. The different electrical characteristics such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (IB) and a decrease in hFE, gm and ICSat was observed after 1 MeV electron irradiation. The collector–base (C–B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1 MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C2) versus voltage shows that the effective carrier concentration and built-in voltage (Vbi) increase marginally upon 1 MeV electron irradiation. The results of 1 MeV electron irradiation were compared with 1 MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1 MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1 MeV proton-irradiated transistor. The 1 MeV proton, 1 MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters