Thermal Conductivity of Isotopically Enriched 28Si Revisited

The thermal conductivity of isotopically enriched 28Si (enrichment better than 99.9%) was redetermined independently in three laboratories by high precision experiments on a total of 4 samples of different shape and degree of isotope enrichment in the range from 5 to 300 K with particular emphasis on the range near room temperature. The results obtained in the different laboratories are in good agreement with each other. They indicate that at room temperature the thermal conductivity of isotopically enriched 28Si exceeds the thermal conductivity of Si with a natural, unmodified isotope mixture by 102 %. This finding is in disagreement with an earlier report by Ruf et al. At 26 K the thermal conductivity of 28Si reaches a maximum. The maximum value depends on sample shape and the degree of isotope enrichment and exceeds the thermal conductivity of natural Si by a factor of 8 for a 99.982% 28Si enriched sample. The thermal conductivity of Si with natural isotope composition is consistently found to be 3% lower than the values recommended in the literature

Anomalous Negative Magnetoresistance Caused by Non-Markovian Effects

A theory of recently discovered anomalous low-field magnetoresistance is developed for the system of two-dimensional electrons scattered by hard disks of radius $a,$ randomly distributed with concentration $n.$ For small magnetic fields the magentoresistance is found to be parabolic and inversely proportional to the gas parameter, $\delta \rho_{xx}/\rho \sim - (\omega_c \tau)^2 / n a^2.$ With increasing field the magnetoresistance becomes linear $\delta \rho_{xx}/\rho \sim - \omega_c \tau$ in a good agreement with the experiment and numerical simulations.Comment: 4 pages RevTeX, 5 figure

Quasiclassical magnetotransport in a random array of antidots

We study theoretically the magnetoresistance $\rho_{xx}(B)$ of a two-dimensional electron gas scattered by a random ensemble of impenetrable discs in the presence of a long-range correlated random potential. We believe that this model describes a high-mobility semiconductor heterostructure with a random array of antidots. We show that the interplay of scattering by the two types of disorder generates new behavior of $\rho_{xx}(B)$ which is absent for only one kind of disorder. We demonstrate that even a weak long-range disorder becomes important with increasing $B$. In particular, although $\rho_{xx}(B)$ vanishes in the limit of large $B$ when only one type of disorder is present, we show that it keeps growing with increasing $B$ in the antidot array in the presence of smooth disorder. The reversal of the behavior of $\rho_{xx}(B)$ is due to a mutual destruction of the quasiclassical localization induced by a strong magnetic field: specifically, the adiabatic localization in the long-range Gaussian disorder is washed out by the scattering on hard discs, whereas the adiabatic drift and related percolation of cyclotron orbits destroys the localization in the dilute system of hard discs. For intermediate magnetic fields in a dilute antidot array, we show the existence of a strong negative magnetoresistance, which leads to a nonmonotonic dependence of $\rho_{xx}(B)$.Comment: 21 pages, 13 figure

The VEPP-5 injection complex modulator revision and operational experience

For the VEPP-5 injection complex klystrons (5045, SLAC Lab., USA) power supply the four modulators producing a pulse voltage of 23.5 kV, a current of 6.3 kA, a pulse-top-duration of 3.7 µs are used. The modulator scheme designed over ten years ago has proved its reliability and let us to find out and study the weak spots of the modulators. The output voltage stability and pulse-to-pulse time jitter improvements are made. The results of the thyratrons TGI1-2500/50 and TGI1-5000/50A long-term exploitation in the VEPP-5 injection complex modulators are presented. The test results of the thyratron TGI1-2500/50 operating in the mode of more then twice pulse current overload at the nominal mode of modulator operation are also presented.Для живлення клістронів 5045 (виробництво SLAC) інжекційного комплексу ВЕПП-5 використовуються модулятори, що формують імпульси напругою 23,5 кВ, струмом 6,3 кА, тривалістю 3,7 мкс у кількості 4 штук. Конструкція модуляторів, розроблена близько 10 років тому, довела свою надійність і, разом з тим, дозволила вивчити і виявити слабкі місця модуляторів. Проведена робота з підвищення стабільності напруги на клістроні, зменшенню часового розкиду від імпульсу до імпульсу. Приводяться результати тривалої експлуатації тиратронів ТГІ1-2500/50 і ТГІ1-5000/50 у модуляторах для живлення клістронів 5045. Викладено результати ресурсних іспитів тиратрона ТГІ1-2500/50 при більш ніж подвійному перевантаженню по амплітуді струму в номінальному режимі роботи модулятора.Для питания клистронов 5045 (производство SLAC) инжекционного комплекса ВЭПП-5 используются модуляторы, формирующие импульсы напряжением 23,5 кВ, током 6,3 кА, длительностью 3,7 мкс в количестве 4 штук. Конструкция модуляторов, разработанная около 10 лет назад, доказала свою надежность и, вместе с тем, позволила изучить и выявить слабые места модуляторов. Проведена работа по повышению стабильности напряжения на клистроне, уменьшению временного разброса от импульса к импульсу. Приводятся результаты длительной эксплуатации тиратронов ТГИ1-2500/50 и ТГИ1-5000/50 в модуляторах для питания клистронов 5045. Изложены результаты ресурсных испытаний тиратрона ТГИ1-2500/50 при более чем двойной перегрузке по амплитуде тока в номинальном режиме работы модулятора

Association of Polymorphisms of Serotonin Transporter (5HTTLPR) and 5-HT2C Receptor Genes with Criminal Behavior in Russian Criminal Offenders

Background: Human aggression is a heterogeneous behavior with biological, psychological, and social backgrounds. As the biological mechanisms that regulate aggression are components of both reward-seeking and adversity-fleeing behavior, these phenomena are difficult to disentangle into separate neurochemical processes. Nevertheless, evidence exists linking some forms of ag

Measurement of \Gamma_{ee}(J/\psi)*Br(J/\psi->e^+e^-) and \Gamma_{ee}(J/\psi)*Br(J/\psi->\mu^+\mu^-)

The products of the electron width of the J/\psi meson and the branching fraction of its decays to the lepton pairs were measured using data from the KEDR experiment at the VEPP-4M electron-positron collider. The results are \Gamma_{ee}(J/\psi)*Br(J/\psi->e^+e^-)=(0.3323\pm0.0064\pm0.0048) keV, \Gamma_{ee}(J/\psi)*Br(J/\psi->\mu^+\mu^-)=(0.3318\pm0.0052\pm0.0063) keV. Their combinations \Gamma_{ee}\times(\Gamma_{ee}+\Gamma_{\mu\mu})/\Gamma=(0.6641\pm0.0082\pm0.0100) keV, \Gamma_{ee}/\Gamma_{\mu\mu}=1.002\pm0.021\pm0.013 can be used to improve theaccuracy of the leptonic and full widths and test leptonic universality. Assuming e\mu universality and using the world average value of the lepton branching fraction, we also determine the leptonic \Gamma_{ll}=5.59\pm0.12 keV and total \Gamma=94.1\pm2.7 keV widths of the J/\psi meson.Comment: 7 pages, 6 figure

Search for narrow resonances in e+ e- annihilation between 1.85 and 3.1 GeV with the KEDR Detector

We report results of a search for narrow resonances in e+ e- annihilation at center-of-mass energies between 1.85 and 3.1 GeV performed with the KEDR detector at the VEPP-4M e+ e- collider. The upper limit on the leptonic width of a narrow resonance Gamma(R -> ee) Br(R -> hadr) < 120 eV has been obtained (at 90 % C.L.)

A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro's constant

A metrological challenge is currently underway to replace the present definition of the kilogram. One prerequisite for this is that the Avogadro constant, NA, which defines the number of atoms in a mole, needs to be determined with a relative uncertainty of better than 2  ×  10−8. The method applied in this case is based on the x-ray crystal density experiment using silicon crystals. The first attempt, in which silicon of natural isotopic composition was used, failed. The solution chosen subsequently was the usage of silicon highly enriched in 28Si from Russia. First, this paper reviews previous efforts from the very first beginnings to an international collaboration with the goal of producing a 28Si single crystal with a mass of 5 kg, an enrichment greater than 0.9999 and of sufficient chemical purity. Then the paper describes the activities of a follow-up project, conducted by PTB, to produce a new generation of highly enriched silicon in order to demonstrate the quasi-industrial and reliable production of more than 12 kg of the 28Si material with enrichments of five nines. The intention of this project is also to show the availability of 28Si single crystals as a guarantee for the future realisation of the redefined kilogram