Sol-Gel Deposited Porogen Based Porous Low-k Thin Films for Interlayer Dielectric Application in ULSI Circuits

Porous SiO2 low-k thin films with low dielectric constant were successfully deposited by sol-gel spin-coating technique. The films were deposited by using Tertaethylorthosilicate (TEOS) as a precursor solution and HF was used as an acid catalyst solution. The Tween80 with different volumetric concentrations i.e. 0.0 ml, 0.5 ml and 0.7 ml was used as a pore generator to lower the dielectric constant of the films by introducing the porosity in the films matrix. The thickness and refractive index (RI) of low-k thin films have been measured by Ellipsometer. The refractive index and thickness of the films observed to be decreasing with increase in Tween80 concentration. The chemical bonding structures of films were analyzed by using Fourier transform infrared spectroscopy (FT-IR) spectroscopy and the stretching, bending and rocking peaks appear at 1077 cm – 1, 967 cm – 1, 447 cm – 1 respectively confirm the formation of Si-O-Si network. The RIs of the films deposited at 0 ml, 0.5 ml and at 0.7 ml of Tween80 concentration are found to be 1.34, 1.26, and 1.20 respectively. Based on RI values of the films, the porosity percentage, density and dielectric constant have been calculated by standard formulation method. The increase in porosity percentage of films from 3 % to 55 % with increase in Tween80 concentration reveals that, the most of the hydroxyl group and porogen get evaporated and form more voids in the films. This increase in porosity percentage causes to lower the dielectric constant of films and was found to be 2.26 at the 0.7 ml of Tween80 concentration. Such porogen based low dialectic constant thin films can be suitable for interlayer dielectric (ILD) applications in ULSI circuits. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2959

Preparation of edible powder from Jawla (Acetes sp.) prawns

Four methods were employed for the preparation of prawn (Acetes) powder in this study. The analytical characteristics and bacteriological quality of the edible powders are presented for each method

Deposition And Surface Modification Of Low-K Thin Films For Ild Application In Ulsi Circuits

The low-k thin films have been deposited successfully by sol gel technique using tetraethylorthosilicate (TEOS) precursor and the surface of deposited thin films have been modified by wet chemical treatment using trimethylcholorsilane (TMCS) and hexane solution with 15 % volume ratio to remove the hydroxyl groups from the surface of deposited low-k thin films. The characterization of the as deposited and surface modified low-k thin films has been carried out by Ellipsometer, Fourier transform infrared (FTIR) spectrometer, and contact angle meter. For the determination of the dielectric constant of the deposited thin film the metal –insulator-semiconductor (MIS) structure was formed by depositing the Aluminium (Al) metal on the low-k thin film. Further the capacitance-voltage curve of the MIS structure has been obtained at 1 MHz frequency. The dielectric constant of the as deposited thin film is found to be 2.15. The lowering of O-H peaks and appearance of CH3 peaks in FTIR spectra confirms the surface modification of SiO2 films. The contact angle of the deposited thin film is changed from 83.3° to 104° after surface modification that validates the transformation of thin film surface from hydrophilic to hydrophobic after the surface modification treatment. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/950

Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor

In the present study, the Al/CeO2 / p-Si MOS capacitor was fabricated by depositing the Aluminium (Al) metal layer by thermal evaporation technique on sol-gel derived CeO2 high-k thin films on p-Si substrate. The deposited CeO2 films were characterized by Ellipsometer to study the refractive index that is determined to be 3.62. The FTIR analysis was carried out to obtain chemical bonding characteristics. Capacitance-voltage measurements of Al/CeO2 /p-Si MOS capacitor were carried out to determine the dielectric constant, equivalent oxide thickness (EOT) and flat band shift (VFB) for the deposited CeO2 film of 16.22, 1.62 nm and 0.7 V respectively. The conductance voltage curve was used to determine the interface trap density (Dit) at the CeO2 / p-Si interface that is calculated to be 1.29 × 1013 cm – 2 eV – 1 for measurement frequency of 500 kHz. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3192

Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure

Ge CMOS is very striking for the post Si-CMOS technology. However, we have to attempt a number of challenges with regard to materials and their interface control. In this paper we have investigated the control of the interfacial properties of SiO2 / Ge gate stack structures by the thermal nitridation technique. Structural and electrical properties of SiO2 gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering on germanium are studied. The structural characterization confirmed that the thin film was free of physical defects and smooth surface of the films after PDA at 500 °C in N2 ambient. The smooth surface SiO2 thin films were used for Pt / SiO2 / GeON / Ge MOS structures fabrication. The MOS structure yields a low leakage current density of 9.16 × 10 – 6Acm – 2 at 1 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3100

Interplay of quantum magnetic and potential scattering around Zn or Ni impurity ions in superconducting cuprates

To describe the scattering of superconducting quasiparticles from non-magnetic (Zn) or magnetic (Ni) impurities in optimally doped high T$_c$ cuprates, we propose an effective Anderson model Hamiltonian of a localized electron hybridizing with $d_{x^2-y^2}$-wave BCS type superconducting quasiparticles with an attractive scalar potential at the impurity site. Due to the strong local antiferromagnetic couplings between the original Cu ions and their nearest neighbors, the localized electron in the Ni-doped materials is assumed to be on the impurity sites, while in the Zn-doped materials the localized electron is distributed over the four nearest neighbor sites of the impurities with a dominant $d_{x^2-y^2}$ symmetric form of the wave function. With Ni impurities, two resonant states are formed above the Fermi level in the local density of states at the impurity site, while for Zn impurities a sharp resonant peak below the Fermi level dominates in the local density of states at the Zn site, accompanied by a small and broad resonant state above the Fermi level mainly induced by the potential scattering. In both cases, there are no Kondo screening effects. The local density of states and their spatial distribution at the dominant resonant energy around the substituted impurities are calculated for both cases, and they are in good agreement with the experimental results of scanning tunneling microscopy in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ with Zn or Ni impurities, respectively.Comment: 24 pages, Revtex, 8 figures, submitted to Physical Review B for publication. Sub-ject Class: Superconductivity; Strongly Correlated Electron

Spinless impurities and Kondo-like behavior in strongly correlated electron systems

We investigate magnetic properties induced by a spinless impurity in strongly correlated electron systems, i.e. the Hubbard model in the spatial dimension $D=1,2,$ and 3. For the 1D system exploiting the Bethe ansatz exact solution we find that the spin susceptibility and the local density of states in the vicinity of a spinless impurity show divergent behaviors. The results imply that the induced local moment is not completely quenched at any finite temperatures. On the other hand, the spin lattice relaxation rate obtained by bosonization and boundary conformal field theory satisfies a relation analogous to the Korringa law, $1/T_1T \sim \chi^2$. In the 2D and 3D systems, the analysis based upon the antiferromagnetically correlated Fermi liquid theory reveals that the antiferromagnetic spin fluctuation developed in the bulk is much suppressed in the vicinity of a spinless impurity, and thus magnetic properties are governed by the induced local moment, which leads to the Korringa law of $1/T_1$.Comment: 9pages,1figure, final version accepted for publication in Phys.Rev.B(Jan2001

Galaxy And Mass Assembly (GAMA): testing galaxy formation models through the most massive galaxies in the Universe

We have analysed the growth of Brightest Group Galaxies and Brightest Cluster Galaxies (BGGs/BCGs) over the last 3 billion years using a large sample of 883 galaxies from the Galaxy And Mass Assembly survey. By comparing the stellar mass of BGGs and BCGs in groups and clusters of similar dynamical masses, we find no significant growth between redshift z = 0.27 and 0.09. We also examine the number of BGGs/BCGs that have line emission, finding that approximately 65 per cent of BGGs/BCGs show Hα in emission. From the galaxies where the necessary spectroscopic lines were accurately recovered (54 per cent of the sample), we find that half of this (i.e. 27 per cent of the sample) harbour ongoing star formation with rates up to 10 M⊙ yr−1, and the other half (i.e. 27 per cent of the sample) have an active nucleus (AGN) at the centre. BGGs are more likely to have ongoing star formation, while BCGs show a higher fraction of AGN activity. By examining the position of the BGGs/BCGs with respect to their host dark matter halo, we find that around 13 per cent of them do not lie at the centre of the dark matter halo. This could be an indicator of recent cluster–cluster mergers. We conclude that BGGs and BCGs acquired their stellar mass rapidly at higher redshifts as predicted by semi-analytic models, mildly slowing down at low redshifts

The Dependence of the Superconducting Transition Temperature of Organic Molecular Crystals on Intrinsically Non-Magnetic Disorder: a Signature of either Unconventional Superconductivity or Novel Local Magnetic Moment Formation

We give a theoretical analysis of published experimental studies of the effects of impurities and disorder on the superconducting transition temperature, T_c, of the organic molecular crystals kappa-ET_2X and beta-ET_2X (where ET is bis(ethylenedithio)tetrathiafulvalene and X is an anion eg I_3). The Abrikosov-Gorkov (AG) formula describes the suppression of T_c both by magnetic impurities in singlet superconductors, including s-wave superconductors and by non-magnetic impurities in a non-s-wave superconductor. We show that various sources of disorder lead to the suppression of T_c as described by the AG formula. This is confirmed by the excellent fit to the data, the fact that these materials are in the clean limit and the excellent agreement between the value of the interlayer hopping integral, t_perp, calculated from this fit and the value of t_perp found from angular-dependant magnetoresistance and quantum oscillation experiments. If the disorder is, as seems most likely, non-magnetic then the pairing state cannot be s-wave. We show that the cooling rate dependence of the magnetisation is inconsistent with paramagnetic impurities. Triplet pairing is ruled out by several experiments. If the disorder is non-magnetic then this implies that l>=2, in which case Occam's razor suggests that d-wave pairing is realised. Given the proximity of these materials to an antiferromagnetic Mott transition, it is possible that the disorder leads to the formation of local magnetic moments via some novel mechanism. Thus we conclude that either kappa-ET_2X and beta-ET_2X are d-wave superconductors or else they display a novel mechanism for the formation of localised moments. We suggest systematic experiments to differentiate between these scenarios.Comment: 18 pages, 5 figure

Azimuthal anisotropy and correlations in p+p, d+Au and Au+Au collisions at 200 GeV

We present the first measurement of directed flow ($v_1$) at RHIC. $v_1$ is found to be consistent with zero at pseudorapidities $\eta$ from -1.2 to 1.2, then rises to the level of a couple of percent over the range $2.4 < |\eta| < 4$. The latter observation is similar to data from NA49 if the SPS rapidities are shifted by the difference in beam rapidity between RHIC and SPS. Back-to-back jets emitted out-of-plane are found to be suppressed more if compared to those emitted in-plane, which is consistent with {\it jet quenching}. Using the scalar product method, we systematically compared azimuthal correlations from p+p, d+Au and Au+Au collisions. Flow and non-flow from these three different collision systems are discussed.Comment: Quark Matter 2004 proceeding, 4 pages, 3 figure