Social Rating System as a Form of State Control Over Society: Prospects for Implementation and Development, Threats to Realization

The purpose of the article was a scientifically sound assessment of the advantages and risks of introducing a social rating system into the mechanism of state control over society. The article reveals the concept of social rating and reveals the basic principles of its formation. The degree of influence of the rating assessment on the living conditions of citizens and stimulation of their socially useful behaviour is reflected. Using the example of Chinese experience, the procedure for implementing projects on the implementation of the social rating system was considered, on the basis of which a comparative analysis of the advantages and risks of integrating the concept of social rating into the mechanism of public administration was carried out. During the author’s study, general scientific methods of analysis and synthesis were used, as well as the monographic method and the method of establishing causal relationships

Origin of multiple memory states in organic ferroelectric field-effect transistors

In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate—top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET

Exploring the Energy Landscape of the Charge Transport Levels in Organic Semiconductors at the Molecular Scale

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Origin of Meyer-Neldel-type compensation behavior in organic semiconductors at large carrier concentrations: Disorder vs. thermodynamic description

We have extended an effective medium approximation theory [Fishchuk, Kadashchuk, Genoe, Ullah, Sitter, Singh, Sariciftci, and Bässler, Phys. Rev. B 81, 045202 (2010)] to investigate how polaron formation affects the Meyer-Neldel (MN) compensation behavior observed for temperature-dependent charge-carrier transport in disordered organic semiconductors at large carrier concentrations, as realized in organic field-effect transistors (OFETs). We show that the compensation behavior in organic semiconductor thin films can be consistently described for both nonpolaronic and polaronic hopping transport in the framework of the disorder formalism using either Miller-Abrahams or polaron Marcus rates, respectively, provided that the polaron binding energy is small compared to the width of the density of states (DOS) distribution in the system. We argue that alternative models based on thermodynamic reasoning, like the multiexcitation entropy (MEE) model, which assumes charge transport dominated by polarons with multiphonon processes and ignores the energy disorder, are inherently not applicable to describe adequately the charge-carrier transport in disordered organic semiconductors. We have suggested and realized a test experiment based on measurements of the compensation behavior for the temperature-dependent conductivity and mobility in OFET devices to check the applicability of these models. We point out that the MN behavior observed in thin-film OFETs has nothing to do with the genuine MN rule predicted by the MEE approach, but rather it is an apparent effect arising as a consequence of the functional dependence of the partial filling of the DOS in a disordered system with hopping transport. This fact is fully supported by experimental results. The apparent MN energy was found to depend also on the shape of the DOS distribution and polaron binding energy.status: publishe

Unraveling the mechanism of molecular doping in organic semiconductors

The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect. Copyright cop. 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Origin of multiple memory states in organic ferroelectric field-effect transistors

In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate—top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET

Electrostatic phenomena in organic semiconductors: fundamentals and implications for photovoltaics

This review summarizes the current understanding of electrostatic phenomena in ordered and disordered organic semiconductors, outlines numerical schemes developed for quantitative evaluation of electrostatic and induction contributions to ionization potentials and electron affinities of organic molecules in a solid state, and illustrates two applications of these techniques: interpretation of photoelectron spectroscopy of thin films and energetics of heterointerfaces in organic solar cells