Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states caused by the disorder of amorphous metal oxide films. We start from presenting the results for amorphous (a) HfO<sub>2</sub>, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy (EPDS) measurements and theoretical calculations using density functional theory (DFT) shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO<sub>2</sub>. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modelling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO<sub>2</sub> and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO<sub>2</sub>, a-Al<sub>2</sub>O<sub>3</sub>, a-TiO<sub>2</sub>. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum (CBM) can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO<sub>2</sub> and a-SiO<sub>2</sub> weakens Hf(Si)-O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O<sup>2-</sup> ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions

Diffraction and quasiclassical limit of the Aharonov--Bohm effect

Since the Aharonov-Bohm effect is the purely quantum effect that has no analogues in classical physics, its persistence in the quasiclassical limit seems to be hardly possible. Nevertheless, we show that the scattering Aharonov-Bohm effect does persist in the quasiclassical limit owing to the diffraction, i.e. the Fraunhofer diffraction in the case when space outside the enclosed magnetic flux is Euclidean, and the Fresnel diffraction in the case when the outer space is conical. Hence, the enclosed magnetic flux can serve as a gate for the propagation of short-wavelength, almost classical, particles. In the case of conical space, this quasiclassical effect which is in principle detectable depends on the particle spin.Comment: 12 pages, minor changes, references update

Low temperature spin fluctuations in geometrically frustrated Yb3Ga5O12

In the garnet structure compound Yb3Ga5O12, the Yb3+ ions (ground state effective spin S' = 1/2) are situated on two interpenetrating corner sharing triangular sublattices such that frustrated magnetic interactions are possible. Previous specific heat measurements evidenced the development of short range magnetic correlations below 0.5K and a lambda-transition at 54mK (Filippi et al. J. Phys. C: Solid State Physics 13 (1980) 1277). From 170-Yb M"ossbauer spectroscopy measurements down to 36mK, we find there is no static magnetic order at temperatures below that of the lambda-transition. Below 0.3K, the fluctuation frequency of the short range correlated Yb3+ moments progressively slows down and as the temperature tends to 0, the frequency tends to a quasi-saturated value of 3 x 10^9 s^-1. We also examined the Yb3+ paramagnetic relaxation rates up to 300K using 172-Yb perturbed angular correlation measurements: they evidence phonon driven processes.Comment: 6 pages, 5 figure

Six-dimensional Davidson potential as a dynamical symmetry of the symplectic Interacting Vector Boson Model

A six-dimensional Davidson potential, introduced within the framework of the Interacting Vector Boson Model (IVBM), is used to describe nuclei that exhibit transitional spectra between the purely rotational and vibrational limits of the theory. The results are shown to relate to a new dynamical symmetry that starts with the $Sp(12,R) \supset SU(1,1) \times SO(6)$ reduction. Exact solutions for the eigenstates of the model Hamiltonian in the basis defined by a convenient subgroup chain of SO(6) are obtained. A comparison of the theoretical results with experimental data for heavy nuclei with transitional spectra illustrates the applicability of the theory.Comment: 9 pages, 4 figure

Superradiance from an ultrathin film of three-level V-type atoms: Interplay between splitting, quantum coherence and local-field effects

We carry out a theoretical study of the collective spontaneous emission (superradiance) from an ultrathin film comprised of three-level atoms with $V$-configuration of the operating transitions. As the thickness of the system is small compared to the emission wavelength inside the film, the local-field correction to the averaged Maxwell field is relevant. We show that the interplay between the low-frequency quantum coherence within the subspace of the upper doublet states and the local-field correction may drastically affect the branching ratio of the operating transitions. This effect may be used for controlling the emission process by varying the doublet splitting and the amount of low-frequency coherence.Comment: 15 pages, 5 figure

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al2O3 lead to the development of ≈0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 ± 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al2O3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al2O3 interface of 3.1 ± 0.1 eV and 2.5 ± 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0–2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3698461

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374

Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2

The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3137187

The double sheath on cathodes of discharges burning in cathode vapour

International audienceThe model of a collisionless near-cathode space-charge sheath with ionization of atoms emitted by the cathode surface is considered. Numerical calculations showed that the mathematical problem is solvable and its solution is unique. In the framework of this model, the sheath represents a double layer with a potential maximum, with the ions which are produced before the maximum returning to the cathode surface and those produced after the maximum escaping into the plasma. Numerical results are given in a form to be readily applicable in analysis of discharges burning in cathode vapor, such as vacuum arcs. In particular, the results indicate that the ion backflow coefficient in such discharges is at least 53%, in agreement with values extracted from the experiment