Critical radius for hot-jet ignition of hydrogen-air mixtures

This study addresses deflagration initiation of lean and stoichiometric hydrogen–air mixtures by the sudden discharge of a hot jet of their adiabatic combustion products. The objective is to compute the minimum jet radius required for ignition, a relevant quantity of interest for safety and technological applications. For sufficiently small discharge velocities, the numerical solution of the problem requires integration of the axisymmetric Navier–Stokes equations for chemically reacting ideal-gas mixtures, supplemented by standard descriptions of the molecular transport terms and a suitably reduced chemical-kinetic mechanism for the chemistry description. The computations provide the variation of the critical radius for hot-jet ignition with both the jet velocity and the equivalence ratio of the mixture, giving values that vary between a few tens microns to a few hundred microns in the range of conditions explored. For a given equivalence ratio, the critical radius is found to increase with increasing injection velocities, although the increase is only moderately large. On the other hand, for a given injection velocity, the smallest critical radius is found at stoichiometric conditions

Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the , or growth direction. When growing on the and directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm−1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growt

Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts

In this work, the role of the nitrogen content, the annealing temperature, and the sample morphology on the luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films has been investigated. An increasing nitrogen atomic percentage has been incorporated in the host matrix by gradually replacing oxygen with nitrogen during fabrication while maintaining the Si content unaltered, obtaining a sequential variation in the film composition from nearly stoichiometric SiO2 to SiOxNy. The study of rare earth doped single layers has allowed us to identify the parameters that yield an optimum optical performance from Ce3+ and Tb3+ ions. Ce3+ ions proved to be highly sensitive to the annealing temperature and the nitrogen content, showing strong PL emission for relatively low nitrogen contents (from 0 to 20%) and moderate annealing temperatures (800-1000 degrees C) or under high temperature annealing (1180 degrees C). Tb3+ ions, on the other hand, displayed a mild dependence on those film parameters. Rare earth co-doping has also been investigated by comparing the luminescence properties of three different approaches: (i) a Ce3+ and Tb3+ co-doped SiOxNy single layer, (ii) a bilayer composed of two SiOxNy single layers doped with either Ce3+ or Tb3+ ions, and (iii) a multilayer composed of a series of either Tb3+ or Ce3+-doped SiOxNy thin films with interleaved SiO2 spacers. Bright green emission and efficient energy transfer from either Ce3+ ions or Ce silicates to Tb3+ ions has been observed in the co-doped single layer as a consequence of the strong ion-ion interaction. On the other hand, independent luminescence from Ce3+ and Tb3+ ions has been observed in the Ce3+ and Tb3+ co-doped bilayer and multilayer, providing a good scenario to develop light emitting devices with wide color tunability by varying the number of deposited films that contain each rare earth dopant. Moreover, the optoelectronic properties of Ce3+-and/or Tb3+-doped thin films have been studied by depositing transparent conductive electrodes over selected samples. An electroluminescence signal according to the rare earth transitions is obtained in all cases, validating the excitation of Ce3+ and Tb3+ ions upon electron injection. Also, the main charge transport of injected electrons has been evaluated and correlated with the layer stoichiometry. Finally, a simple reliability test has allowed disclosing the origin of the early breakdown of test devices, attributed to the excessive joule heating at filament currents that occur around a region close to the polarization point. (C) 2016 AIP Publishing LLC.This research was supported by the Spanish Ministry of Science and Innovation (TEC2012-38540-C02-01). RBS characterization was performed in the Tandetron Accelerator Laboratory at Western University in London, ON (Canada). TEM characterization was carried out in the Science and Technical Centers (CCiT) of the University of Barcelona. In Canada, this work was supported by the Natural Sciences and Engineering Research Council (NSERC) under the Discovery Grants program.Ramirez, JM.; Ruiz-Caridad, A.; Wojcik, J.; Gutiérrez Campo, AM.; Estrade, S.; Peiro, F.; Sanchis Kilders, P.... (2016). Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts. Journal of Applied Physics. 119(11):113108-1-113108-14. https://doi.org/10.1063/1.4944433S113108-1113108-141191

Time-of-flight mass measurements of neutron-rich chromium isotopes up to N = 40 and implications for the accreted neutron star crust

We present the mass excesses of 59-64Cr, obtained from recent time-of-flight nuclear mass measurements at the National Superconducting Cyclotron Laboratory at Michigan State University. The mass of 64Cr is determined for the first time, with an atomic mass excess of -33.48(44) MeV. We find a significantly different two-neutron separation energy S2n trend for neutron-rich isotopes of chromium, removing the previously observed enhancement in binding at N=38. Additionally, we extend the S2n trend for chromium to N=40, revealing behavior consistent with the previously identified island of inversion in this region. We compare our results to state-of-the-art shell-model calculations performed with a modified Lenzi-Nowacki-Poves-Sieja interaction in the fp shell, including the g9/2 and d5/2 orbits for the neutron valence space. We employ our result for the mass of 64Cr in accreted neutron star crust network calculations and find a reduction in the strength and depth of electron-capture heating from the A=64 isobaric chain, resulting in a cooler than expected accreted neutron star crust. This reduced heating is found to be due to the >1-MeV reduction in binding for 64Cr with respect to values from commonly used global mass models.Comment: Accepted to Physical Review

Reliable Characterization of Organic & Pharmaceutical Compounds with High Resolution Monochromated EEL Spectroscopy

Organic and biological compounds (especially those related to the pharmaceutical industry) have always been of great interest for researchers due to their importance for the development of new drugs to diagnose, cure, treat or prevent disease. As many new API (active pharmaceutical ingredients) and their polymorphs are in nanocrystalline or in amorphous form blended with amorphous polymeric matrix (known as amorphous solid dispersion-ASD), their structural identification and characterization at nm scale with conventional X-Ray/Raman/IR techniques becomes difficult. During any API synthesis/production or in the formulated drug product, impurities must be identified and characterized. Electron energy loss spectroscopy (EELS) at high energy resolution by transmission electron microscope (TEM) is expected to be a promising technique to screen and identify the different (organic) compounds used in a typical pharmaceutical or biological system and to detect any impurities present, if any, during the synthesis or formulation process. In this work, we propose the use of monochromated TEM-EELS, to analyze selected peptides and organic compounds and their polymorphs. In order to validate EELS for fingerprinting (in low loss/optical region) and by further correlation with advanced DFT, simulations were utilized

Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect

Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission

The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into selfassembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientation