Thermoelectric performance of weakly coupled granular materials

We study thermoelectric properties of inhomogeneous nanogranular materials for weak tunneling conductance between the grains, g_t < 1. We calculate the thermopower and figure of merit taking into account the shift of the chemical potential and the asymmetry of the density of states in the vicinity of the Fermi surface. We show that the weak coupling between the grains leads to a high thermopower and low thermal conductivity resulting in relatively high values of the figure of merit on the order of one. We estimate the temperature at which the figure of merit has its maximum value for two- and three-dimensional samples. Our results are applicable for many emerging materials, including artificially self-assembled nanoparticle arrays.Comment: 4 pages, 3 figure

Lightweight amorphous silicon photovoltaic modules on flexible plastic substrate

Solar cells on lightweight and flexible substrates have advantages over glass-or wafer-based photovoltaic devices in both terrestrial and space applications. Here, we report on development of amorphous silicon thin film photovoltaic modules fabricated at maximum deposition temperature of 150 degrees C on 100 mu m thick polyethylene-naphtalate plastic films. Each module of 10 cm x 10 cm area consists of 72 a-Si:H n-i-p rectangular structures with transparent conducting oxide top electrodes with Al fingers and metal back electrodes deposited through the shadow masks. Individual structures are connected in series forming eight rows with connection ports provided for external blocking diodes. The design optimization and device performance analysis are performed using a developed SPICE model

Spectral asymptotics for solutions of 2×22\times 2 system of ordinary differential equations of the first order

The aim of the paper is to find representation for solutions of $2\times 2$ system of ordinary differential equations $$\mathbf{y^\prime} - B(x)\mathbf{y} = \lambda A(x)\mathbf{y}, \quad \ x \in [0, 1],$$ where $A(x) = diag\{a_1(x), a_2(x)\}$, $B(x) = (b_{ij}(x))$, $a_1(x) > 0, \ a_2(x) < 0$ and all the functions $a_{i}, b_{ij}$ belong to the Sobolev spaces $W^n_1[0,1]$ for given integer $n\geqslant 0$. We prove that there exists a fundamental matrix of solutions for the above system, which have representation $$Y(x, \lambda) = M(x)\left(I + \frac{R^1(x)}{\lambda} + \dots + \frac{R^n(x)}{\lambda^n} + o(1)\lambda^{-n}\right)E(x, \lambda),$$ where $o(1) \to 0$ uniformly for $x\in [0,1]$ as the spectral parameter $\lambda \to \infty$ in the half plane $\Re\,\lambda >-\kappa$ or $\Re\,\lambda <\kappa$, where $\kappa$ is any fixed real number. The main novelty is that we give explicit formulae for all matrices $M,E$ and $R^m$ in this representation.Comment: in Russian languag

AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different

The morphology of Si{sub 1-Y} Ge{sub Y}:H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T{sub s}=300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H{sub 2} dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm{sup 2} area. All the images demonstrated ''grain'' like structure, which was characterized by the height distribution function F(H) average roughness &lt;H&gt;, standard height deviation Rq, lateral correlation length L{sub c} area distribution function F(s), mean grain area &lt;s&gt;, diameter distribution function F(d), and mean grain diameter &lt;d&gt;. The roughness &lt;H&gt; of the films monotonically increases with Y for all dilutions, but more significantly in the films deposited without dilution. L{sub c} continuously grows with Y in the films deposited without dilution, while more complex behavior L{sub c}(Y) is observed in the films deposited with H- or Ar dilution. The sharpness of F(H) characterized by curtosis {gamma} depends on dilution and the sharpest F(H) are for the films deposited with Ar ({gamma}=5.30,Y=0.23) and without dilution ({gamma}=4.3, Y=0.45). Isothermal annealing caused increase of &lt;H&gt;, L{sub c} in the films deposited with H- and Ar dilutions, while in the films prepared without dilution the behavior was more complex, depending on the substrates. Significant narrowing of the height distribution was observed in the films deposited with H dilution or without dilution

Lightweight amorphous silicon photovoltaic modules on flexible plastic substrate

Solar cells on lightweight and flexible substrates have advantages over glass-or wafer-based photovoltaic devices in both terrestrial and space applications. Here, we report on development of amorphous silicon thin film photovoltaic modules fabricated at maximum deposition temperature of 150 degrees C on 100 mu m thick polyethylene-naphtalate plastic films. Each module of 10 cm x 10 cm area consists of 72 a-Si:H n-i-p rectangular structures with transparent conducting oxide top electrodes with Al fingers and metal back electrodes deposited through the shadow masks. Individual structures are connected in series forming eight rows with connection ports provided for external blocking diodes. The design optimization and device performance analysis are performed using a developed SPICE model

Паритет покупательной способности валют - уникальный инструмент международных сопоставлений

The article discuses general issues of methodology and practical experience in GDP international comparisons based on purchasing power parities; a brief description of the world experience is presented. Results of the 2011 Global comparison round are being analyzed.В статье рассматриваются общие вопросы методологии и практики международных сопоставлений ВВП на основе паритета покупательной способности валют, приводится краткое описание развития работ в мире. Анализируются итоги Глобального раунда сопоставлений по данным за 2011 г

Spatial distribution of breeding Pied Flycatchers Ficedula hypoleuca in respect to their natal sites

Study of philopatry and dispersal of pied flycatchers Ficedula hypoleuca was launched on the Courish Spit (SE Baltic) in 1981. Since then, ca. 9,000 nestlings were ringed at different sites in the Russian part of the Courish Spit. A total of 557 individuals ringed as pulli were recaptured in subsequent seasons in the study area. Both males and females are more often recaptured in the plots where they were ringed than in other plots. These results were interpreted in the framework of the hypothesis forwarded by Löhrl (1959) and supported by Berndt & Winkel (1979). These authors suggested that cavity nesters (pied flycatchers and collared flycatchers F. albicollis) imprint their future local breeding area during the period of postfledging exploration. Birds that survive until the next spring, return to these imprinted areas to breed. A similar study done by Sokolov et al. (1984) on the Courish Spit in an open nesting species, the chaffinch Fringilla coelebs, confirmed this finding. We assumed that juvenile pied flycatchers disperse for varying distances during their postfledging movements and imprint a local area, some 1–5 kilometres in diameter. This area is the goal of their migration next spring. It is suggested that in spring, yearlings are non–randomly distributed in respect to the area they have imprinted as juveniles. Recently, Vysotsky (2000, 2001) re–analysed the same data on philopatry of pied flycatchers on the Courish Spit and forwarded an alternative hypothesis. He suggests that juveniles, both males and females, do not imprint any local area during the postfledging period, but are distributed randomly across the area of several dozens of kilometres in spring. Vysotsky was able to show that distribution of distances of natal dispersal did not differ from the random pattern the study plot which was an 8.5 km long line of nest boxes along the Courish Spit. The aim of this study was to test these two alternative hypotheses. To do so, we set up nine new study plots in 2000. Over 800 nest–boxes were made available for the birds (in addition to the old 400) in the 44 km long area. We recaptured pied flycatchers returning for breeding during four years, 2000–2003. The distribution of natal dispersal distances was compared with the null model which assumes that pied flycatchers settle randomly in the study area. We took all nest boxes from which pied flycatchers successfully fledged in a particular year and all next boxes where we were able to capture either a male or a female in the subsequent year, and calculated the distances between each pair of such nest boxes. Simulations were run separately for each sex. Theoretical distributions already include control efficiency. If some nest boxes were not checked in some year, or if we failed to capture one or both members of a breeding pair, we did not include this nest box in the model. Some birds could settle outside the study plot. Therefore, the theoretical distribution may underestimate the actual range of natal dispersal, but is unlikely to overestimate it. The number of females ringed as nestlings and recaptured as one–year–old birds was 43. The distribution of their natal distances (mean 6,8 km, SE = 0,81; median 5,4 km) was not significantly different from the pattern predicted by the null model (Wilcoxon matched pairs test: z = 1,25; p = 0,21). Conversely, males settled significantly closer to their natal nest box (n = 83; mean 4,3 km, SE = 0,57; median 2,5 km) than predicted by the model (Wilcoxon matched pairs test: z = 2,45; p = 0,014). For example, 24% of males settle within one km from their natal site, as compared with 7% predicted by the model. Males are found with a greater than chance probability within the 7 km zone around their natal site. The hypothesis by Vysotsky (2000) can thus be rejected for pied flycatcher males. Pied flycatcher females are known to settle at larger distances from their natal nest box. The very fact that were controlled 83 males and only 43 females suggests, assumed that sex ratio at fledging is close to being equal and that true survival rates during the first year of life do not differ greatly between the sexes, that many females emigrated from of our study plot. This does not mean that juvenile females do not imprint a home area during the postfledging period, as suggested by Vysotsky (2000). We think that the reason for this is not the inadequate navigational ability of the females but the fact that they were attracted by a prospecting male at some distance from their migratory destination and settle there. Such intercepting was suggested by Fedorov (1996) for Acrocephalus warblers, and it may exist in other migratory passerines. This is supported by the data on natal site fidelity from Spain which show that in Spanish pied flycatcher populations, recruitment rate did not differ between female and male juveniles (Potti & Montalvo, 1991). Females from these southern populations have a limited chance to be attracted by prospecting males in even more southern areas

Plasma Enhanced Chemical Vapor Deposited Materials and Organic Semiconductors in Photovoltaic Devices

Introduction. PECVD enables fabrication of wide range of advanced materials with various structure such as amorphous, polymorphous, nano-crystalline, nanostructured, microcrystalline etc. and with various electronic properties. The latter can be also changed by different dopingl. PECVD silicon materials are commercially employed in multi-layered PV structures (including ones on flexible substrates). Combining these materials with crystalline silicon active substrate resulted in significant improvement of PCE in hetero junction technology PV structures. Existence of new organic semiconductors (OS) together with understanding of physical properties resulted in fast development of OC PV devicesAim. To consider both PECVD and OS materials and to present description of fabrication, structure and electronic properties for device application.Materials and methods. Devices based on non-crystalline materials, devices based on OS, hybrid devices. PECVD and Spin coating technique was used to deposit materials with tunable properties enabling device engineering possibilities.Results. PECVD and OS materials were analyzed. These materials have different levels of characterization (data volume, interpretation of the results etc.) and of understanding of physics determining device performance. Some examples of these materials in PV including structures with crystalline silicon were considered.Conclusion. Important advantage of both PECVD and OS materials is that fabrication methods are compatible and allow fabrication of great variety of hybrid device structures on crystalline semiconductors. Advantages of such devices are difficult to predict because of lack of data in scientific literature. However a new area in material science and related devices for further exploring and exploiting has appeared.Introduction. PECVD enables fabrication of wide range of advanced materials with various structure such as amorphous, polymorphous, nano-crystalline, nanostructured, microcrystalline etc. and with various electronic properties. The latter can be also changed by different dopingl. PECVD silicon materials are commercially employed in multi-layered PV structures (including ones on flexible substrates). Combining these materials with crystalline silicon active substrate resulted in significant improvement of PCE in hetero junction technology PV structures. Existence of new organic semiconductors (OS) together with understanding of physical properties resulted in fast development of OC PV devices.Aim. To consider both PECVD and OS materials and to present description of fabrication, structure and electronic properties for device application.Materials and methods. Devices based on non-crystalline materials, devices based on OS, hybrid devices. PECVD and Spin coating technique was used to deposit materials with tunable properties enabling device engineering possibilities.Results. PECVD and OS materials were analyzed. These materials have different levels of characterization (data volume, interpretation of the results etc.) and of understanding of physics determining device performance. Some examples of these materials in PV including structures with crystalline silicon were considered.Conclusion. Important advantage of both PECVD and OS materials is that fabrication methods are compatible and allow fabrication of great variety of hybrid device structures on crystalline semiconductors. Advantages of such devices are difficult to predict because of lack of data in scientific literature. However a new area in material science and related devices for further exploring and exploiting has appeared