Quantum spin Hall phase in multilayer graphene

The so called quantum spin Hall phase is a topologically non trivial insulating phase that is predicted to appear in graphene and graphene-like systems. In this work we address the question of whether this topological property persists in multilayered systems. We consider two situations: purely multilayer graphene and heterostructures where graphene is encapsulated by trivial insulators with a strong spin-orbit coupling. We use a four orbital tight-binding model that includes the full atomic spin-orbit coupling and we calculate the $Z_{2}$ topological invariant of the bulk states as well as the edge states of semi-infinite crystals with armchair termination. For homogeneous multilayers we find that even when the spin-orbit interaction opens a gap for all the possible stackings, only those with odd number of layers host gapless edge states while those with even number of layers are trivial insulators. For the heterostructures where graphene is encapsulated by trivial insulators, it turns out that the interlayer coupling is able to induce a topological gap whose size is controlled by the spin-orbit coupling of the encapsulating materials, indicating that the quantum spin Hall phase can be induced by proximity to trivial insulators.Comment: 7 pages, 6 figure

Van der Waals spin valves

We propose spin valves where a 2D non-magnetic conductor is intercalated between two ferromagnetic insulating layers. In this setup, the relative orientation of the magnetizations of the insulating layers can have a strong impact on the in-plane conductivity of the 2D conductor. We first show this for a graphene bilayer, described with a tight-binding model, placed between two ferromagnetic insulators. In the anti-parallel configuration, a band gap opens at the Dirac point, whereas in the parallel configuration, the graphene bilayer remains conducting. We then compute the electronic structure of graphene bilayer placed between two monolayers of the ferromagnetic insulator CrI$_3$, using density functional theory. Consistent with the model, we find that a gap opens at the Dirac point only in the antiparallel configuration.Comment: 5 pages, 4 figure

Optical spin transfer in ferromagnetic semiconductors

Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a photocarrier in a (III,V) semiconductors is determined by the polarization state of the laser. We show that the photocarrier spin can be irreversibly transferred to the collective magnetization, whose dynamics can consequently be flexibly controlled by suitably chosen laser pulses. As illustrations we demonstrate the feasibility of all optical ferromagnetic resonance and optical magnetization reorientation.Comment: 8 pages, 3 figure

Real space mapping of topological invariants using artificial neural networks

Topological invariants allow to characterize Hamiltonians, predicting the existence of topologically protected in-gap modes. Those invariants can be computed by tracing the evolution of the occupied wavefunctions under twisted boundary conditions. However, those procedures do not allow to calculate a topological invariant by evaluating the system locally, and thus require information about the wavefunctions in the whole system. Here we show that artificial neural networks can be trained to identify the topological order by evaluating a local projection of the density matrix. We demonstrate this for two different models, a 1-D topological superconductor and a 2-D quantum anomalous Hall state, both with spatially modulated parameters. Our neural network correctly identifies the different topological domains in real space, predicting the location of in-gap states. By combining a neural network with a calculation of the electronic states that uses the Kernel Polynomial Method, we show that the local evaluation of the invariant can be carried out by evaluating a local quantity, in particular for systems without translational symmetry consisting of tens of thousands of atoms. Our results show that supervised learning is an efficient methodology to characterize the local topology of a system.Comment: 9 pages, 6 figure

Controlled complete suppression of single-atom inelastic spin and orbital cotunnelling

The inelastic portion of the tunnel current through an individual magnetic atom grants unique access to read out and change the atom's spin state, but it also provides a path for spontaneous relaxation and decoherence. Controlled closure of the inelastic channel would allow for the latter to be switched off at will, paving the way to coherent spin manipulation in single atoms. Here we demonstrate complete closure of the inelastic channels for both spin and orbital transitions due to a controlled geometric modification of the atom's environment, using scanning tunnelling microscopy (STM). The observed suppression of the excitation signal, which occurs for Co atoms assembled into chain on a Cu$_2$N substrate, indicates a structural transition affecting the d$_z$$^2$ orbital, effectively cutting off the STM tip from the spin-flip cotunnelling path.Comment: 4 figures plus 4 supplementary figure

Storage of classical information in quantum spins

Digital magnetic recording is based on the storage of a bit of information in the orientation of a magnetic system with two stable ground states. Here we address two fundamental problems that arise when this is done on a quantized spin: quantum spin tunneling and back-action of the readout process. We show that fundamental differences exist between integer and semi-integer spins when it comes to both, read and record classical information in a quantized spin. Our findings imply fundamental limits to the miniaturization of magnetic bits and are relevant to recent experiments where spin polarized scanning tunneling microscope reads and records a classical bit in the spin orientation of a single magnetic atom

Magnetic and orbital blocking in Ni nanocontacts

We address the fundamental question of whether magneto-resistance (MR) of atomic-sized contacts of Nickel is very large because of the formation of a domain wall (DW) at the neck. Using {\em ab initio} transport calculations we find that, as in the case of non-magnetic electrodes, transport in Ni nanocontacts depends very much on the orbital nature of the electrons. Our results are in agreement with several experiments in the average value of the conductance. On the other hand, contrary to existing claims, DW scattering does {\em not} account for large MR in Ni nanocontacts.Comment: 5 pages, 3 Figure

Transport in magnetically ordered Pt nanocontacts

Pt nanocontacts, like those formed in mechanically controlled break junctions, are shown to develop spontaneous local magnetic order. Our density functional calculations predict that a robust local magnetic order exists in the atoms presenting low coordination, i. e., those forming the atom-sized neck. In contrast to previous work, we thus find that the electronic transport can be spin-polarized, although the net value of the conductance still agrees with available experimental information. Experimental implications of the formation of this new type of nanomagnet are discussed.Comment: 4 pages, 3 figure

Spin splitting in a polarized quasi-two-dimensional exciton gas

We have observed a large spin splitting between "spin" $+1$ and $-1$ heavy-hole excitons, having unbalanced populations, in undoped GaAs/AlAs quantum wells in the absence of any external magnetic field. Time-resolved photoluminescence spectroscopy, under excitation with circularly polarized light, reveals that, for high excitonic density and short times after the pulsed excitation, the emission from majority excitons lies above that of minority ones. The amount of the splitting, which can be as large as 50% of the binding energy, increases with excitonic density and presents a time evolution closely connected with the degree of polarization of the luminescence. Our results are interpreted on the light of a recently developed model, which shows that, while intra-excitonic exchange interaction is responsible for the spin relaxation processes, exciton-exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors.Comment: Revtex, four pages; four figures, postscript file Accepted for publication in Physical Review B (Rapid Commun.