Well-width dependence of the ground level emission of GaN/AlGaN quantum wells

We have performed a systematic investigation of GaN/AlGaN quantum wells grown on different buffer layers (either GaN or AlGaN) in order to clarify the role of strain, structural parameters, and built-in field in determining the well-width dependence of the ground level emission energy. We find that identical quantum wells grown on different buffer layers exhibit strong variation of the ground level energy but similar well-width dependence. The data are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight binding model

Dominance of charged excitons in single quantum dot photoluminescence spectra

Single InxGa1-xAs/GaAs quantum dot photoluminescence spectra, obtained by low-temperature near-field scanning optical microscopy, are compared with theoretically derived optical spectra. The spectra show shell filling as well as few-particle fine structure associated with neutral and charged multiexcitons, in good agreement with the many-body calculations. There appears to be a greater tendency to charged-exciton formation, which is discussed in terms of the high diffusivity of photogenerated electrons

Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires

An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra

Temperature dependence of the photoluminescence properties of colloidal Cd Se ∕ Zn S core/shell quantum dots embedded in a polystyrene matrix

We report on the temperature dependence of the photoluminescence (PL) spectrum and of the PL relaxation dynamics for colloidal $\mathrm{Cd}\mathrm{Se}∕\mathrm{Zn}\mathrm{S}$ core/shell quantum dots (QDs) embedded in an inert polystyrene matrix. We demonstrate that the confinement energy in the QDs is independent of the temperature. The coupling with both acoustic and optical phonons is also studied. Quantum confinement results in a strong increase of the exciton\char21{}acoustic-phonon coupling constant, up to 71\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{eV}∕\mathrm{K}, and in a reduced exciton\char21{}longitudinal-optical (LO)-phonon coupling constant, down to $21\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$, with respect to bulk CdSe. In addition, we demonstrate that the main nonradiative process that limits the quantum efficiency of the QD at room temperature is the thermal escape from the dot assisted by scattering with four LO phonons. Thermally activated trapping in surface states is also observed at low temperature, with an activation energy of about $15\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$

Light Emission Properties of Thermally Evaporated CH3 NH3 PbBr3 Perovskite from Nano-to Macro-Scale: Role of Free and Localized Excitons

Over the past decade, interest about metal halide perovskites has rapidly increased, as they can find wide application in optoelectronic devices. Nevertheless, although thermal evaporation is crucial for the development and engineering of such devices based on multilayer structures, the optical properties of thermally deposited perovskite layers (spontaneous and amplified spontaneous emission) have been poorly investigated. This paper is a study from a nano-to micro-and macro-scale about the role of light-emitting species (namely free carriers and excitons) and trap states in the spontaneous emission of thermally evaporated thin layers of CH3 NH3 PbBr3 perovskite after wet air UV light trap passivation. The map of light emission from grains, carried out by SNOM at the nanoscale and by micro-PL techniques, clearly indicates that free and localized excitons (EXs) are the dominant light-emitting species, the localized excitons being the dominant ones in the presence of crystallites. These species also have a key role in the amplified spontaneous emission (ASE) process: for higher excitation densities, the relative contribution of localized EXs basically remains constant, while a clear competition between ASE and free EXs spontaneous emission is present, which suggests that ASE is due to stimulated emission from the free EXs

Photoluminescence efficiency of Substituted Quaterthiophene Crystals

none8The photoluminescence (PL) efficiency of substituted α-conjugated quaterthiophene crystals shows marked differences depending on crystal packing and molecular geometry. This effect is studied by evaluating the role of the intermolecular interactions and the effects of the single molecule conformation on the intersystem crossing (ISC) rate. The comparison of these calculations with absolute quantum efficiency measurements and with the experimental temperature dependence of the PL decay time, indicates that the differences in PL efficiency are not inherent to crystal packing effects but they are determined by the ISC rate.G.GIGLI; F.DELLA SALA; M.LOMASCOLO; M.ANNI; G.BARBARELLA; A.DI CARLO; P.LUGLI; R. CINGOLANIGigli, Giuseppe; F., DELLA SALA; M., Lomascolo; Anni, Marco; G., Barbarella; A., DI CARLO; P., Lugli; Cingolani, Robert

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very popular in view of their applications as electronic and optoelectronic components. AlGaN-based deep UV emitters are gaining visibility due to their disinfection capabilities. Likewise, high electron mobility transistors are attracting increasing attention owing to their superior electron transport which yields high-speed and high-power applications. These devices are conventionally made of AlGaN/GaN heterostructures grown on foreign substrates. However, structural defects, including stress induced by a mismatch in unit cell parameters and the presence of dislocations, can not only decrease the efficiency of the light emitters (by facilitating the non-radiative recombination of electron-hole pairs), but also impede electron mobility within the two-dimensional electron gas at the AlGaN/GaN interface. Therefore, the significance of obtaining high-quality AlGaN layers becomes evident. Including a thin AlN interlayer between the GaN buffer layer and AlGaN is a possible answer to address these drawbacks. Not only do we show that a thin AlN layer, approximately ≤3 nm in thickness, between the GaN buffer and AlGaN layers, is effective in decreasing the dislocation densities in the AlGaN layer by around 30%, but also this is responsible for an increase in the electron mobility (approximately 33%) compared to a classical AlGaN/GaN heterostructure. Additionally, the resulting heterostructure exhibits better optical quality, with a 7-fold increase in intensity as well as a 20% reduction in full-width at half-maximum in the AlGaN emission

One fungus, which genes?: development and assessment of universal primers for potential secondary fungal DNA barcodes

The aim of this study was to assess potential candidate gene regions and corresponding universal primer pairs as secondary DNA barcodes for the fungal kingdom, additional to ITS rDNA as primary barcode. Amplification efficiencies of 14 (partially) universal primer pairs targeting eight genetic markers were tested across > 1 500 species (1 931 strains or specimens) and the outcomes of almost twenty thousand (19 577) polymerase chain reactions were evaluated. We tested several well-known primer pairs that amplify: i) sections of the nuclear ribosomal RNA gene large subunit (D1-D2 domains of 26/28S); ii) the complete internal transcribed spacer region (ITS1/2); iii) partial beta-tubulin II (TUB2); iv) gamma-actin (ACT); v) translation elongation factor 1-alpha (TEF1 alpha); and vi) the second largest subunit of RNA-polymerase II (partial RPB2, section 5-6). Their PCR efficiencies were compared with novel candidate primers corresponding to: i) the fungal-specific translation elongation factor 3 (TEF3); ii) a small ribosomal protein necessary for t-RNA docking; iii) the 60S L10 (L1) RP; iv) DNA topoisomerase I (TOPI); v) phosphoglycerate kinase (PGK); vi) hypothetical protein LNS2; and vii) alternative sections of TEF1 alpha. Results showed that several gene sections are accessible to universal primers (or primers universal for phyla) yielding a single PCR-product. Barcode gap and multi-dimensional scaling analyses revealed that some of the tested candidate markers have universal properties providing adequate infra- and inter-specific variation that make them attractive barcodes for species identification. Among these gene sections, a novel high fidelity primer pair for TEF1 alpha, already widely used as a phylogenetic marker in mycology, has potential as a supplementary DNA barcode with superior resolution to ITS. Both TOPI and PGK show promise for the Ascomycota, while TOPI and LNS2 are attractive for the Pucciniomycotina, for which universal primers for ribosomal subunits often fail