604 research outputs found
Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor
The optical properties and the dynamics of excitons and the electron-hole plasma have been studied in disordered (AlxGa1−x)0.52In0.48P near to the direct-to-indirect band gap crossover. In particular we have investigated three epitaxial layers grown by solid-source molecular beam epitaxy with varying Al content x. Two of them have compositions in the immediate vicinity of the crossover point, the other is assigned to the indirect-gap regime. Both direct and indirect recombination processes contribute to the photon emission from the material. Since the relative importance of the different recombination processes depends strongly on temperature, excitation intensity, and excitation pulse duration, the processes can be identified by changing these parameters. As a result, we can determine the relative alignment of the conduction band minima and the distribution of the electrons among them. At high excitation levels the two crossover samples show stimulated emission at a photon energy of ∼2.29 eV, i.e., in the green spectral range. Using the variable stripe length method, we find an optical gain of up to ∼600 cm−1 at excitation levels of ∼350 kW/cm2.Stimulated emission involves direct recombination. This conclusion is reached from the experiments and from line-shape modeling, including a self-consistent treatment of populations and renormalization of the conduction band minima
Energy levels and magneto-optical transitions in parabolic quantum dots with spin-orbit coupling
We report on the electronic properties of few interacting electrons confined
in a parabolic quantum dot based on a theoretical approach developed to
investigate the influence of Bychkov-Rashba spin-orbit (SO) interaction on such
a system. We note that the spin-orbit coupling profoundly influences the energy
spectrum of interacting electrons in a quantum dot. Here we present accurate
results for the energy levels and optical-absorption spectra for parabolic
quantum dots containing upto four interacting electrons, in the presence of
spin-orbit coupling and under the influence of an externally applied,
perpendicular magnetic field. We have described in detail about a very accurate
numerical scheme to evaluate these quantities. We have evaluated the effects of
SO coupling on the Fock-Darwin spectra for quantum dots made out of three
different semiconductor systems, InAs, InSb, and GaAs.Comment: expanded version of cond-mat/0501642 to be published in Phys. Rev.
Let
Trends in Metal Oxide Stability for Nanorods, Nanotubes, and Surfaces
The formation energies of nanostructures play an important role in
determining their properties, including the catalytic activity. For the case of
15 different rutile and 8 different perovskite metal oxides, we find that the
density functional theory (DFT) calculated formation energies of (2,2)
nanorods, (3,3) nanotubes, and the (110) and (100) surfaces may be described
semi-quantitatively by the fraction of metal--oxygen bonds broken and the
bonding band centers in the bulk metal oxide
Strong polarization-induced reduction of addition energies in single-molecule nanojunctions
We address polarization-induced renormalization of molecular levels in
solid-state based single-molecule transistors and focus on an organic conjugate
molecule where a surprisingly large reduction of the addition energy has been
observed. We have developed a scheme that combines a self-consistent solution
of a quantum chemical calculation with a realistic description of the screening
environment. Our results indeed show a large reduction, and we explain this to
be a consequence of both (a) a reduction of the electrostatic molecular
charging energy and (b) polarization induced level shifts of the HOMO and LUMO
levels. Finally, we calculate the charge stability diagram and explain at a
qualitative level general features observed experimentally.Comment: 9 pages, 5 figure
Transform-domain analysis of packet delay in network nodes with QoS-aware scheduling
In order to differentiate the perceived QoS between traffic classes in heterogeneous packet networks, equipment discriminates incoming packets based on their class, particularly in the way queued packets are scheduled for further transmission. We review a common stochastic modelling framework in which scheduling mechanisms can be evaluated, especially with regard to the resulting per-class delay distribution. For this, a discrete-time single-server queue is considered with two classes of packet arrivals, either delay-sensitive (1) or delay-tolerant (2). The steady-state analysis relies on the use of well-chosen supplementary variables and is mainly done in the transform domain. Secondly, we propose and analyse a new type of scheduling mechanism that allows precise control over the amount of delay differentiation between the classes. The idea is to introduce N reserved places in the queue, intended for future arrivals of class 1
Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates
[Image: see text] Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with complementary metal–oxide–semiconductor (CMOS) technology applications. Structural studies reveal the self-formation of an Al-rich AlGaAs shell, thicker at the NW base and thinning towards the tip, with the opposite behavior observed for the NW core. Wide alloy fluctuations in the shell region are also noticed. AlGaAs NW structures with nominal Al contents of 10, 20, and 30% have strong room temperature photoluminescence, with emission in the range of 1.50–1.72 eV. Individual NWs with an embedded 4.9 nm-thick GaAs region exhibit clear QD behavior, with spatially localized emission, both exciton and biexciton recombination lines, and an exciton line width of 490 μeV at low temperature. Our results demonstrate the properties and behavior of the AlGaAs NWs and AlGaAs/GaAs NWQDs grown via the self-catalyzed approach for the first time and exhibit their potential for a range of novel applications, including nanolasers and single-photon sources
Quasiparticle interfacial level alignment of highly hybridized frontier levels: HO on TiO(110)
Knowledge of the frontier levels' alignment prior to photo-irradiation is
necessary to achieve a complete quantitative description of HO
photocatalysis on TiO(110). Although HO on rutile TiO(110) has been
thoroughly studied both experimentally and theoretically, a quantitative value
for the energy of the highest HO occupied levels is still lacking. For
experiment, this is due to the HO levels being obscured by hybridization
with TiO(110) levels in the difference spectra obtained via ultraviolet
photoemission spectroscopy (UPS). For theory, this is due to inherent
difficulties in properly describing many-body effects at the
HO-TiO(110) interface. Using the projected density of states (DOS) from
state-of-the-art quasiparticle (QP) , we disentangle the adsorbate and
surface contributions to the complex UPS spectra of HO on TiO(110). We
perform this separation as a function of HO coverage and dissociation on
stoichiometric and reduced surfaces. Due to hybridization with the TiO(110)
surface, the HO 3a and 1b levels are broadened into several peaks
between 5 and 1 eV below the TiO(110) valence band maximum (VBM). These
peaks have both intermolecular and interfacial bonding and antibonding
character. We find the highest occupied levels of HO adsorbed intact and
dissociated on stoichiometric TiO(110) are 1.1 and 0.9 eV below the VBM. We
also find a similar energy of 1.1 eV for the highest occupied levels of HO
when adsorbed dissociatively on a bridging O vacancy of the reduced surface. In
both cases, these energies are significantly higher (by 0.6 to 2.6 eV) than
those estimated from UPS difference spectra, which are inconclusive in this
energy region. Finally, we apply self-consistent QP (scQP1) to obtain
the ionization potential of the HO-TiO(110) interface.Comment: 12 pages, 12 figures, 1 tabl
Optical properties of (AlxGa1−x)0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor
The optical properties and the dynamics of excitons and the electron-hole plasma have been studied in disordered (AlxGa1−x)0.52In0.48P near to the direct-to-indirect band gap crossover. In particular we have investigated three epitaxial layers grown by solid-source molecular beam epitaxy with varying Al content x. Two of them have compositions in the immediate vicinity of the crossover point, the other is assigned to the indirect-gap regime. Both direct and indirect recombination processes contribute to the photon emission from the material. Since the relative importance of the different recombination processes depends strongly on temperature, excitation intensity, and excitation pulse duration, the processes can be identified by changing these parameters. As a result, we can determine the relative alignment of the conduction band minima and the distribution of the electrons among them. At high excitation levels the two crossover samples show stimulated emission at a photon energy of ∼2.29 eV, i.e., in the green spectral range. Using the variable stripe length method, we find an optical gain of up to ∼600 cm−1 at excitation levels of ∼350 kW/cm2.Stimulated emission involves direct recombination. This conclusion is reached from the experiments and from line-shape modeling, including a self-consistent treatment of populations and renormalization of the conduction band minima
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