CO_2激光熔拉锥过程光功率控制研究

基于CO2熔拉锥技术,对熔拉锥设备的控制方法进行了改进。利用柱体Mie散射公式计算光纤在加工过程中的光能利用率,结合Grellier的热传导模型,确定了加工过程中激光功率增长与光纤拉伸距离之间的对应关系。利用计算结果,采用分段直线递增的方法对激光功率进行控制,简化了仪器控制的难度。实验得到锥腰直径2~3μm左右的熔锥光纤,锥腰和过渡区的形状和尺寸都得到了很好的控制

Fabrication and Characteristics of GaN-based Blue VCSEL

利用金属有机物气相沉积技术(MOCVD)在(0001)蓝宝石衬底上生长了Ga N基垂直腔面发射激光器(VCSEL)的多量子阱腔层结构。X射线衍射测量显示该多量子阱具有良好周期结构和平整界面。运用键合及激光剥离技术将该外延片制作成VCSEL,顶部和底部反射镜为极高反射率的介质膜分布布拉格反射镜(DBR)。在室温、紫外脉冲激光的泵浦条件下,观察到了VCSEL明显的激射现象,峰值波长位于447.7 nm,半高宽为0.11 nm,自发辐射因子约为6.0×10-2,阈值能量密度约为8.8 m J/cm2。在大幅度降低制作难度的情况下,得到目前国际最好结果同样数量级的激射阈值。降低器件制作难度有利于制备的重复性,有利于器件的产品化。Ga N-based multiple quantum wells( MQWs) were epitaxially grown on( 0001)-oriented sapphire substrate by metal organic chemical vapor deposition( MOCVD) technique. X-ray diffraction measurements indicated that the MQWs had good periodic structure and smooth interface. By employing bonding and laser lift-off techniques,the MQW structure was sandwiched between two high reflectivity dielectric distributed Bragg reflectors( DBRs),forming a vertical-cavity surfaceemitting laser( VCSEL). Under optical pumping,the VCSEL achieved laser action at room temperature with a threshold pumping energy density of about 8. 8 m J / cm2. The laser emitted a blue light at 447. 7 nm with a narrow linewidth of 0. 11 nm,and had a high spontaneous emission factor of about 6. 0 × 10- 2.国家自然科学基金(61307115);; 福建省教育厅A类科技项目(JA12249);; 厦门理工学院高校高层次人才基金(YKJ11026R);; 福建省自然科学基金(2013J05104)资助项

微球喇曼激光器的性能研究

由光学球微腔与光纤耦而构成的喇曼激光器大大降低了阈值泵浦功率,明显提高了总体效率.本文对微球喇曼激光器的性能进行了详细的理论模拟研究,从泵浦信号和喇曼信号的速率方程出发,推导出微球喇曼激光器的阈值公式,讨论和分析了微球喇曼激光器的球微腔与熔锥光纤的耦合特性及耦合对激光器阈值的影响,并提出了提高该激光器耦合效率的有效方案

连续输出1.60W/473nm直腔蓝光激光器

报道了LD端面泵浦Nd∶YAG晶体,LBO腔内倍频473 nm全固态直腔蓝光激光器.根据谐振腔稳定性理论,利用简单的平-平腔直接测得不同泵浦功率下的热焦距值.通过数值计算分析了不同热焦距下,Nd∶YAG与LBO晶体中的腰斑半径以及LBO中光腰的位置,并在准三能级系统模型和倍频理论的指导下优化激光腔体结构,使激光器实现最佳的模式匹配和倍频效率,得到高效的蓝光激光输出.激光阈值为1.92 W;当泵浦激光功率为20.58 W时,473 nm蓝光的输出功率为1.60 W,光-光转化效率为7.8%

熔锥光纤与球微腔耦合系统的理论模拟

利用H. J. Shaw提出的单模光纤定向耦合器的分析方法并结合微球腔的特性,对熔锥光纤与球微腔系统的耦合特性进行了理论分析和数值模拟。研究表明,由于原本简并的球腔模式受腔体偏心率的影响而解除,系统吸收峰间距减小,Q值( 106 ~107 )比将腔体视为理想球时提高了三个数量级。这与已报道的实验结果相吻合

An Investigation of AIDS-related Knowledge and Reactions among College Students in China

本研究区分艾滋病知识的两个不同侧面: 对艾滋病的误解和对艾滋病的正确认识, 并第一次在中国探讨这两个不同侧面的知识对艾滋病患者的认知、情感、行为反应的不同预测作用。119 名(31 男, 88 女)来自上海、132 名(59 男, 73 女) 来自广州的大学生参加了本调查。结果发现被调查的大学生: 1) 普遍对艾滋病存在误解, 即认为艾滋病可以通过日常的一般接触传染, 并且, 这种误解和对艾滋病的正确认识相互独立; 2) 都表达了对艾滋病患者的厌恶情感、与艾滋病患者接触的不舒服感; 3) 尽管如此, 但都不支持对艾滋病患者采取强制措施, 也不认为艾滋病患者感染艾滋病是他们自己的责任。研究还发现, 和来自广州的大学生相比, 来自上海的大学生对艾滋病有着更多的了解, 对艾滋病患者有着更少的负性情感、更少的消极态度、他们也更少地把感染责任归结到患者本身。特别有趣的是, 本研究发现, 对艾滋病患者的负性反应具有显著预测能力的是对艾滋病患者的误解而不是正确认识, 即误解越多, 负性反应越多。这些发现提示, 中国未来的艾滋病防治工作应该继续大力加强对艾滋病相关知识的宣传教育, 不仅要让人们知道艾滋病是通过什么途径传染的, 还要特别消除他们对艾滋病的许多误解, 从而减少或消除对艾滋病患者的许多歧视性反应, 营造一个良好的艾滋病防治环境; 同时, 中国的艾滋病防治还应该注意地区差异, 不同地区的防治力度和采取的策略应该和各地的实际疫情相适应。</p

ENERGY FOR MIXED FOREST OF CUNNINGHAMIA LANCEOLATA AND TSOONGIODENDRON ODORUM

对杉木观光木混交林群落能量的研究结果表明 :混交林中观光木地上部分灰分含量以皮最高 ,而杉木则以叶最高 ,两者GCV(干重热值 )和AFCV(去灰分热值 )均以叶为最高 ;观光木、杉木地下各部分的灰分含量均随径级的减小而增加 ,GCV均以粗根最高 ,细根最低 ;观光木的平均灰分含量高于杉木 ,但GCV和AFCV均低于杉木 ;从乔木层、灌木层到草本层 ,灰分含量依次增加 ,GCV和AFCV则依次降低 .混交林群落的能量现存量、年净增量、归还量和净固定量分别是纯林的 1.2 6倍、1.15倍、1.0 2倍和 1.0 9倍 ,其中以乔木层的占大部分 ,林下植被虽然能量现存量仅占群落的很小一部分 ,而其能量年净增量、归还量和净固定量却占有一定比重 .混交林群落的太阳能转化率为 1.5 7% ,而纯林为 1.44 % .表明杉观混交林是一种能量生产力较高和维持地力能力较强的杉阔混交类型 .同时 ,混交林的能量累积比大于纯林 ,能量流动速率则低于纯林 ;乔木层的能量累积比高于林下植被 ,能量流动速率则低于林下植被 .从能量的角度看 ,构建合理的群落结构必须选择高能量累积比的乔木层树种 ,同时须促进能量流动速率快的林下植被的发育以维持和提高地力 .表 4参 2 2Based on the measurement of biomass and productivity, the caloric value of plant samples, the standing crop of energy, net energy production and energy conversing efficiency of mixed forest of Cunninghamia lanceolata and Tsoongiodendron odorum were determined. Among the aboveground fractions, ash content was highest in barks of Tsoongiodendron odorum and in leaves of Cunninghamia lanceolata , and GCV and AFCV were both highest in leaves of the two species. For underground fractions, ash content increased with the increase of root diameter size, and GCV was highest in coarse roots and lowest in fine roots. The mean ash content was higher, and the mean of GCV and AFCV of Tsoongiodendron odorum were lower than those of Cunninghamia lanceolata . The mean ash content increased in an order from tree layer, shrub layer to herb layer, while those of GCV and AFCV decreased. The standing crop, net accumulation, production and returning of energy of mixed forest were 1.26, 1.15, 1.09 and 1.02 times as much as that of pure forest, respectively. The undergrowth played an important role in energy process, though it accounted for only a slight proportion in community. The energy conversing efficiency was 1.57% for mixed forest and 1.44% for pure forest. The ratio of energy accumulation was higher, and the rate of energy flow was lower in mixed forest than in pure forest. The tree layer had a higher ratio of energy accumulation and a lower rate of energy flow than undergrowth did. In view of energy efficiency, trees with high accumulated rate of energy should be introduced and growth of undergrowth should be promoted in a managed forest community. Tab 4, Ref 22中国博士后科研基金;; 福建省科委重大基础研究项目 (2 0 0 0 F 0 4 );; 高等学校骨干教师资助计划资

端面泵浦Nd∶YAG连续输出1052nm波长激光器

设计了一个简单紧凑的1052nm波长激光器。首次利用激光二极管(LD)端面泵浦Nd∶YAG晶体,使用镀有高度选择性介质膜的反射镜产生该波段的激光。激光阈值为0.3W,当808nm波长泵浦光功率达到18W时产生了3.5W的1052nm波长激光输出。光-光转换效率为20%,输出激光功率波动不超过3%

Photoluminescence of Multilayer InAs Quantum Dots

采用MBE设备生长了多层InAs/GaAs量子点结构,测量了其变温光致发光谱和时间分辨光致发光谱。结果表明多层量子点结构有利于减小发光峰的半高宽,并且可以提高发光峰半高宽和发光寿命的温度稳定性。实验发现,加InGaAs盖层后,量子点发光峰的半高宽进一步减小,最小达到23.6 meV,并且发光峰出现红移。原因可能在于InGaAs盖层减小了InAs岛所受的应力,阻止了In组分的偏析,提高了InAs量子点尺寸分布的均匀性和质量,导致载流子在不同量子点中的迁移效应减弱。Multilayer InAs/GaAs quantum dots structures were grown by molecular-beam epitaxy(MBE).The steady-state and time-resolved photoluminescence of the samples were measured at various temperatures.Results showed that multilayer structures could not only narrow the photoluminescence FWHM(full width at the half maximum) but enhance the stability of the photoluminescence lifetime and FWHM.As for the quantum dots with InGaAs cap layer,the photoluminescent spectra became narrower(the narrowest FWHM was only 23.6meV) and the photoluminescent wavelength became longer.The possible reason for the above phenomena was that the InGaAs cap layer could both release the strains in InAs islands and inhibit segregation of In components,resulting in the weaker migration among different quantum dots

MOCVD growth of high-reflectivity AlN/GaN distributed Bragg reflectors

利用金属有机物化学气相沉积(MOCVD)方法在蓝宝石c面衬底上制备出高反射率AlN/GaN分布布拉格反射镜(DBR)。利用分光光度计测量,在418 nm附近最大反射率达到99%。样品表面显微照片显示,有圆弧形缺陷和少量裂纹出现;在缺陷和裂纹以外的区域,DBR具有较为平坦的表面,其粗糙度在10μm×10μm面积上为3.3 nm左右。样品的截面扫描电镜(SEM)照片显示,DBR具有良好的周期性。对反射率和表面分析的结果表明,该样品达到了制备GaN基垂直腔面发射激光器(VCSEL)的要求。A high reflectivity AlN/GaN distributed Bragg reflector(DBR) is grown on c-plane sapphire substrate by metalorganic chemical vapor deposition(MOCVD).A peak reflectivity of 99% is observed around 418 nm by spectrophotometer.Compass-shape defects and a few cracks are observed on the surface.The surface root mean square(RMS) of roughness in the flat area is around 3.3 nm over a 10 μm×10 μm area.The cross-sectional scanning electron microscope(SEM) image reveals the good periodicity of DBR.Considering the peak reflectivity and surface morphology,the DBR can be used to fabricate GaN-based vertical cavity surface emitting laser(VCSEL).国家高技术研究“863”计划资助项目(2006AA03Z409