利用金属有机物气相沉积技术(MOCVD)在(0001)蓝宝石衬底上生长了Ga N基垂直腔面发射激光器(VCSEL)的多量子阱腔层结构。X射线衍射测量显示该多量子阱具有良好周期结构和平整界面。运用键合及激光剥离技术将该外延片制作成VCSEL,顶部和底部反射镜为极高反射率的介质膜分布布拉格反射镜(DBR)。在室温、紫外脉冲激光的泵浦条件下,观察到了VCSEL明显的激射现象,峰值波长位于447.7 nm,半高宽为0.11 nm,自发辐射因子约为6.0×10-2,阈值能量密度约为8.8 m J/cm2。在大幅度降低制作难度的情况下,得到目前国际最好结果同样数量级的激射阈值。降低器件制作难度有利于制备的重复性,有利于器件的产品化。Ga N-based multiple quantum wells( MQWs) were epitaxially grown on( 0001)-oriented sapphire substrate by metal organic chemical vapor deposition( MOCVD) technique. X-ray diffraction measurements indicated that the MQWs had good periodic structure and smooth interface. By employing bonding and laser lift-off techniques,the MQW structure was sandwiched between two high reflectivity dielectric distributed Bragg reflectors( DBRs),forming a vertical-cavity surfaceemitting laser( VCSEL). Under optical pumping,the VCSEL achieved laser action at room temperature with a threshold pumping energy density of about 8. 8 m J / cm2. The laser emitted a blue light at 447. 7 nm with a narrow linewidth of 0. 11 nm,and had a high spontaneous emission factor of about 6. 0 × 10- 2.国家自然科学基金(61307115);; 福建省教育厅A类科技项目(JA12249);; 厦门理工学院高校高层次人才基金(YKJ11026R);; 福建省自然科学基金(2013J05104)资助项
